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Power Transistor. 007N06N Datasheet

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Power Transistor. 007N06N Datasheet
















007N06N Transistor. Datasheet pdf. Equivalent













Part

007N06N

Description

Power Transistor



Feature


IPT007N06N MOSFET OptiMOSTMPower-Trans istor,60V Features •100%avalanche tested •Superiorthermalresistance •N-channel •Qualifiedaccording toJEDEC1)fortargetapplications • Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249- 2-21 Productvalidation Qualifiedaccor dingtoJEDECStandard Table1Key PerformanceParameters Param.
Manufacture

Infineon

Datasheet
Download 007N06N Datasheet


Infineon 007N06N

007N06N; eter Value Unit VDS 60 V RDS(on),m ax 0.75 mΩ ID 486 A Qoss 227 nC QG(0V..10V) 216 nC HSOF Tab 1234 5 678 Drain Tab Gate Pin 1 Source Pi n 2-8 Type/OrderingCode IPT007N06N Package PG-HSOF-8 Marking 007N06N Re latedLinks - 1) J-STD20 and JESD22 F inal Data Sheet 1 Rev.2.3,2019-07- 22 OptiMOSTMPower-Transistor,60V IP T007N06N TableofCo.


Infineon 007N06N

ntents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal charact eristics . . . . ..


Infineon 007N06N

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteri stics diagrams . . . . . . . . . . . . . . . . . . . . . .





Part

007N06N

Description

Power Transistor



Feature


IPT007N06N MOSFET OptiMOSTMPower-Trans istor,60V Features •100%avalanche tested •Superiorthermalresistance •N-channel •Qualifiedaccording toJEDEC1)fortargetapplications • Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249- 2-21 Productvalidation Qualifiedaccor dingtoJEDECStandard Table1Key PerformanceParameters Param.
Manufacture

Infineon

Datasheet
Download 007N06N Datasheet




 007N06N
IPT007N06N
MOSFET
OptiMOSTMPower-Transistor,60V
Features
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
QualifiedaccordingtoJEDECStandard
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
0.75
m
ID
486
A
Qoss
227
nC
QG(0V..10V)
216
nC
HSOF
Tab
12345 678
Drain
Tab
Gate
Pin 1
Source
Pin 2-8
Type/OrderingCode
IPT007N06N
Package
PG-HSOF-8
Marking
007N06N
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.3,2019-07-22




 007N06N
OptiMOSTMPower-Transistor,60V
IPT007N06N
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.3,2019-07-22




 007N06N
OptiMOSTMPower-Transistor,60V
IPT007N06N
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current3)
Avalanche energy, single pulse4)
Gate source voltage
Power dissipation
Operating and storage temperature
ID
ID,pulse
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-20
-
-55
Values
Typ. Max.
-
486
-
371
-
52
-
1944
-
1100
-
20
-
375
-
175
Unit Note/TestCondition
VGS=10V,TC=25°C
A VGS=10V,TC=100°C
VGS=10V,TA=25°C,RthJA=40K/W2)
A TC=25°C
mJ ID=150A,RGS=25
V-
W TC=25°C
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case RthJC
Device on PCB,
minimal footprint
RthJA
Device on PCB,
6 cm² cooling area2)
RthJA
Soldering
soldering
temperature,
are allowed
wave
and
reflow
Tsold
Min.
-
Values
Typ. Max.
0.2 0.4
Unit Note/TestCondition
K/W -
-
-
62 K/W -
-
-
40 K/W -
-
-
260 °C Reflow MSL1
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental
conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.3,2019-07-22




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