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Power Transistor. 60S190D1 Datasheet

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Power Transistor. 60S190D1 Datasheet
















60S190D1 Transistor. Datasheet pdf. Equivalent













Part

60S190D1

Description

Power Transistor



Feature


IGT60R190D1S IGT60R190D1S 600V CoolGaN enhancement-mode Power Transistor F eatures Enhancement mode transistor Normally OFF switch Ultra fast switc hing No reverse-recovery charge Capab le of reverse conduction Low gate char ge, low output charge Superior commuta tion ruggedness Qualified for standard grade applications according to JEDEC standards Benefits Im.
Manufacture

Infineon

Datasheet
Download 60S190D1 Datasheet


Infineon 60S190D1

60S190D1; proves system efficiency Improves power density Enables higher operating freq uency System cost reduction savings R educes EMI G G SK 1 1 SK SK G 1 1 Gate Drain Kelvin Source Source 8 drai n contact 7 1,2,3,4,5,6 Applications C onsumer SMPS and high density chargers based on the half-bridge topology (half -bridge topologies for hard and soft sw itching such as To.


Infineon 60S190D1

tem pole PFC, high frequency LLC and fly back). For other applications: review C oolGaN™ reliability white paper and c ontact Infineon regional support Table 1 Parameter VDS,max RDS(on),max QG,typ ID,pulse Qoss @ 400 V Qrr Key Perform ance Parameters at TJ = 25 °C Value Unit 600 V 190 mΩ 3.2 nC 23 A 16 nC 0 nC Table 2 Ordering Info rmation Type / Orderin.


Infineon 60S190D1

g Code Package IGT60R190D1S PG-HSOF-8- 3 Marking 60S190D1 Related links see Appendix A Final Data Sheet www.infine on.com Please read the Important Notic e and Warnings at the end of this docum ent Rev. 3.12 2020-05-29 IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Table of Contents Feature s ..................................... .....................





Part

60S190D1

Description

Power Transistor



Feature


IGT60R190D1S IGT60R190D1S 600V CoolGaN enhancement-mode Power Transistor F eatures Enhancement mode transistor Normally OFF switch Ultra fast switc hing No reverse-recovery charge Capab le of reverse conduction Low gate char ge, low output charge Superior commuta tion ruggedness Qualified for standard grade applications according to JEDEC standards Benefits Im.
Manufacture

Infineon

Datasheet
Download 60S190D1 Datasheet




 60S190D1
IGT60R190D1S
IGT60R190D1S
600V CoolGaNenhancement-mode Power Transistor
Features
Enhancement mode transistor – Normally OFF switch
Ultra fast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for standard grade applications according to JEDEC standards
Benefits
Improves system efficiency
Improves power density
Enables higher operating frequency
System cost reduction savings
Reduces EMI
G
G
SK
1
1
SK
SK
G
1
1
Gate
Drain
Kelvin Source
Source
8
drain contact
7
1,2,3,4,5,6
Applications
Consumer SMPS and high density chargers based on the half-bridge topology
(half-bridge topologies for hard and soft switching such as Totem pole PFC,
high frequency LLC and flyback).
For other applications: review CoolGaNreliability white paper and contact
Infineon regional support
Table 1
Parameter
VDS,max
RDS(on),max
QG,typ
ID,pulse
Qoss @ 400 V
Qrr
Key Performance Parameters at TJ = 25 °C
Value
Unit
600
V
190
m
3.2
nC
23
A
16
nC
0
nC
Table 2
Ordering Information
Type / Ordering Code Package
IGT60R190D1S
PG-HSOF-8-3
Marking
60S190D1
Related links
see Appendix A
Final Data Sheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Rev. 3.12
2020-05-29




 60S190D1
IGT60R190D1S
600V CoolGaNenhancement-mode Power Transistor
Table of Contents
Features .................................................................................................................................... 1
Benefits .................................................................................................................................... 1
Applications ................................................................................................................................... 1
Table of Contents ........................................................................................................................... 2
1
Maximum ratings ........................................................................................................... 3
2
Thermal characteristics.................................................................................................. 4
3
Electrical characteristics ................................................................................................ 5
4
Electrical characteristics diagrams .................................................................................. 7
5
Test Circuits .................................................................................................................13
6
Package Outlines ..........................................................................................................14
7
Appendix A...................................................................................................................15
8
Revision History ...........................................................................................................16
Final Data Sheet
2
Rev. 3.12
2020-05-29




 60S190D1
IGT60R190D1S
600V CoolGaNenhancement-mode Power Transistor
1
Maximum ratings
at Tj = 25 °C, unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor
lifetime. For further information, contact your local Infineon sales office.
Table 3
Maximum ratings
Parameter
Drain Source Voltage, continuous 1
Drain source destructive breakdown
voltage 2
Drain source voltage, pulsed 2
Switching surge voltage, pulsed 2
Continuous current, drain source
Pulsed current, drain source 3 4
Pulsed current, drain source 4 5
Gate current, continuous 4 5 6
Gate current, pulsed 4 6
Gate source voltage, continuous 6
Gate source voltage, pulsed 6
Power dissipation
Operating temperature
Symbol
VDS,max
VDS,bd
Values
Min. Typ. Max.
-
- 600
800 -
-
Unit Note/Test Condition
V VGS = 0 V
V VGS = 0 V, IDS = 4.3 mA
VDS,pulse
-
- 750 V Tj = 25 °C; VGS ≤ 0 V; ≤1 hour
of total time
-
- 650 V Tj = 125 °C, VGS ≤ 0 V; ≤1 hour
of total time
VDS,surge
-
- 750 V DC bus voltage = 700 V; turn
off VDS,pulse = 750 V; turn on
ID,pulse = 10 A; Tj = 105 °C;
f ≤ 100 kHz, t ≤ 100 secs (10
million pulses)
ID
-
- 12.5 A TC = 25 °C; Tj = Tj, max
-
- 8.0
TC = 100 °C; Tj = Tj, max
-
- 5.5
TC = 125 °C; Tj = Tj, max
ID,pulse
-
-
23
A TC = 25 °C; IG = 9.6 mA;
See Figure 3; Figure 5;
ID,pulse
-
- 13.5 A TC = 125 °C; IG = 9.6 mA;
See Figure 4; Figure 6;
IG,avg
-
- 7.7 mA Tj = -55 °C to 150 °C;
IG,pulse
-
- 770 mA Tj = -55 °C to 150 °C;
tPULSE = 50 ns, f=100 kHz
VGS
-10 -
-
V Tj = -55 °C to 150 °C;
VGS,pulse
-25 -
-
V Tj = -55 °C to 150 °C;
tPULSE = 50 ns, f = 100 kHz;
open drain
Ptot
-
- 55.5 W TC = 25 °C
Tj
-55 - 150 °C
1 All devices are 100% tested at IDS = 4.3 mA to assure VDS ≥ 800 V
2 Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation
3 Limits derived from product characterization, parameter not measured during production
4 Ensure that average gate drive current, IG,avg is ≤ 7.7 mA. Please see figure 27 for IG,avg, IG,pulse and IG details
5 Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application
6 We recommend using an advanced driving technique to optimize the device performance. Please see gate drive application note for
details
Final Data Sheet
3
Rev. 3.12
2020-05-29




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