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IGBT. FF900R12ME7_B11 Datasheet

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IGBT. FF900R12ME7_B11 Datasheet
















FF900R12ME7_B11 IGBT. Datasheet pdf. Equivalent













Part

FF900R12ME7_B11

Description

IGBT



Feature


FF900R12ME7_B11 EconoDUAL™3Modulmit TRENCHSTOP™IGBT7undEmitterControl led7DiodeundNTC EconoDUAL™3modul ewithTRENCHSTOP™IGBT7andEmitterC ontrolled7diodeandNTC Potentielle Anwendungen • Hochleistungsumrichter • Hybrid-Nutzfahrzeuge • Motorantri ebe • Servoumrichter • USV-Systeme ElektrischeEigenschaften • Integrier terTemperatursensor • TrenchstopTMIG.
Manufacture

Infineon

Datasheet
Download FF900R12ME7_B11 Datasheet


Infineon FF900R12ME7_B11

FF900R12ME7_B11; BT7 • VCEsatmitpositivemTemperatur koeffizienten MechanischeEigenschaften • HoheLeistungsdichte • Isolierte Bodenplatte • PressFITVerbindungste chnik • Standardgehäuse VCES = 1200 V IC nom = 900A / ICRM = 1800A Potentia lApplications • Highpowerconverter s • CommercialAgricultureVehicles Motordrives • Servodrives • UP Ssystems ElectricalFeatures • Integra.


Infineon FF900R12ME7_B11

tedtemperaturesensor • TrenchstopTM IGBT7 • VCEsatwithpositivetempera turecoefficient MechanicalFeatures Highpowerdensity • Isolatedbase plate • PressFITcontacttechnology Standardhousing ModuleLabelCode BarcodeCode128 DMX-Code Contentof theCode ModuleSerialNumber ModuleM aterialNumber ProductionOrderNumber Datecode(ProductionYear) Dat.


Infineon FF900R12ME7_B11

ecode(ProductionWeek) Digit 1-5 6 -11 12-19 20-21 22-23 Datashee t www.infineon.com PleasereadtheImp ortantNoticeandWarningsattheendo fthisdocument V3.0 2019-12-20 FF90 0R12ME7_B11 IGBT,Wechselrichter/IGBT ,Inverter HöchstzulässigeWerte/Ma ximumRatedValues Kollektor-Emitter-S perrspannung Collector-emittervoltage Tvj = 25°C VCES  .





Part

FF900R12ME7_B11

Description

IGBT



Feature


FF900R12ME7_B11 EconoDUAL™3Modulmit TRENCHSTOP™IGBT7undEmitterControl led7DiodeundNTC EconoDUAL™3modul ewithTRENCHSTOP™IGBT7andEmitterC ontrolled7diodeandNTC Potentielle Anwendungen • Hochleistungsumrichter • Hybrid-Nutzfahrzeuge • Motorantri ebe • Servoumrichter • USV-Systeme ElektrischeEigenschaften • Integrier terTemperatursensor • TrenchstopTMIG.
Manufacture

Infineon

Datasheet
Download FF900R12ME7_B11 Datasheet




 FF900R12ME7_B11
FF900R12ME7_B11
EconoDUAL™3ModulmitTRENCHSTOP™IGBT7undEmitterControlled7DiodeundNTC
EconoDUAL™3modulewithTRENCHSTOP™IGBT7andEmitterControlled7diodeandNTC
PotentielleAnwendungen
• Hochleistungsumrichter
• Hybrid-Nutzfahrzeuge
• Motorantriebe
• Servoumrichter
• USV-Systeme
ElektrischeEigenschaften
• IntegrierterTemperatursensor
• TrenchstopTMIGBT7
• VCEsatmitpositivemTemperaturkoeffizienten
MechanischeEigenschaften
• HoheLeistungsdichte
• IsolierteBodenplatte
• PressFITVerbindungstechnik
• Standardgehäuse
VCES = 1200V
IC nom = 900A / ICRM = 1800A
PotentialApplications
• Highpowerconverters
• CommercialAgricultureVehicles
• Motordrives
• Servodrives
• UPSsystems
ElectricalFeatures
• Integratedtemperaturesensor
• TrenchstopTMIGBT7
• VCEsatwithpositivetemperaturecoefficient
MechanicalFeatures
• Highpowerdensity
• Isolatedbaseplate
• PressFITcontacttechnology
• Standardhousing
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V3.0
2019-12-20




 FF900R12ME7_B11
FF900R12ME7_B11
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
VCES 
1200
V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 90°C, Tvj max = 175°C
ICDC 
900
A
GrenzeffektivstromderModulDC-Kontakte
MaximumRMSmoduleDC-terminalcurrent
TTerminal 90°C, TC = 90°C
TTerminal 105°C, TC = 90°C
ITRMS 
580
565
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM 
1800
A
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VGES 
+/-20
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 900 A
VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 18,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 / 15 V, VCE = 600 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 100 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 100 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 900 A, VCE = 600 V
VGE = -15 / 15 V
RGon = 0,51
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 900 A, VCE = 600 V
VGE = -15 / 15 V
RGon = 0,51
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 900 A, VCE = 600 V
VGE = -15 / 15 V
RGoff = 0,51
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 900 A, VCE = 600 V
VGE = -15 / 15 V
RGoff = 0,51
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 900 A, VCE = 600 V, Lσ = 25 nH
di/dt = 6200 A/µs (Tvj = 175°C)
VGE = -15 / 15 V, RGon = 0,51
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 900 A, VCE = 600 V, Lσ = 25 nH
du/dt = 3000 V/µs (Tvj = 175°C)
VGE = -15 / 15 V, RGoff = 0,51
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP 8 µs, Tvj = 150°C
tP 6 µs, Tvj = 175°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
min. typ. max.
VCE sat
1,50 1,80 V
1,65
V
1,75
V
VGEth 5,15 5,80 6,45 V
QG
14,3
µC
RGint
0,5
Cies
122
nF
Cres
0,72
nF
ICES
0,1 mA
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
100 nA
0,41
µs
0,46
µs
0,49
µs
0,10
µs
0,11
µs
0,12
µs
0,55
µs
0,63
µs
0,69
µs
0,11
µs
0,23
µs
0,33
µs
89,0
mJ
138
mJ
170
mJ
89,0
mJ
130
mJ
158
mJ
3200
A
3000
A
0,0452 K/W
RthCH
0,0269
K/W
Tvj op -40
175 °C
Datasheet
2
V3.0
2019-12-20




 FF900R12ME7_B11
FF900R12ME7_B11
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
Dauergleichstrom
ContinuousDCforwardcurrent
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 175°C
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
IF = 900 A, VGE = 0 V
IF = 900 A, VGE = 0 V
IF = 900 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Rückstromspitze
Peakreverserecoverycurrent
IF = 900 A, - diF/dt = 6200 A/µs (Tvj=175°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 175°C
Sperrverzögerungsladung
Recoveredcharge
IF = 900 A, - diF/dt = 6200 A/µs (Tvj=175°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 175°C
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 900 A, - diF/dt = 6200 A/µs (Tvj=175°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 175°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
VRRM 
1200
V
IF 
900
A
IFRM 
I²t 
1800
35000
30000
A

A²s
A²s
VF
IRM
Qr
Erec
RthJC
min. typ. max.
1,80 2,05 V
1,70
V
1,65
V
389
A
511
A
578
A
65,0
µC
127
µC
171
µC
29,0
mJ
52,0
mJ
68,0
mJ
0,0868 K/W
RthCH
0,0342
K/W
Tvj op -40
175 °C
NTC-Widerstand/NTC-Thermistor
CharakteristischeWerte/CharacteristicValues
Nennwiderstand
Ratedresistance
TNTC = 25°C
AbweichungvonR100
DeviationofR100
TNTC = 100°C, R100 = 493
Verlustleistung
Powerdissipation
TNTC = 25°C
B-Wert
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B-Wert
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B-Wert
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
AngabengemäßgültigerApplicationNote.
Specificationaccordingtothevalidapplicationnote.
min. typ. max.
R25
5,00
k
R/R -5
5%
P25
20,0 mW
B25/50
3375
K
B25/80
3411
K
B25/100
3433
K
Datasheet
3
V3.0
2019-12-20




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