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MOSFET. BSC028N06LS3 Datasheet

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MOSFET. BSC028N06LS3 Datasheet
















BSC028N06LS3 MOSFET. Datasheet pdf. Equivalent













Part

BSC028N06LS3

Description

MOSFET



Feature


BSC028N06LS3G MOSFET OptiMOSTM3Power- Transistor,60V Features •Idealfor highfrequencyswitchingandsync.rec . •OptimizedtechnologyforDC/DCco nverters •ExcellentgatechargexRD S(on)product(FOM) •Verylowon-res istanceRDS(on) •Superiorthermalr esistance •N-channel,logiclevel 100%avalanchetested •Pb-freepla ting;RoHScompliant •Qualifieda.
Manufacture

Infineon

Datasheet
Download BSC028N06LS3 Datasheet


Infineon BSC028N06LS3

BSC028N06LS3; ccordingtoJEDEC1)fortargetapplicat ions •Halogen-freeaccordingtoIEC6 1249-2-21 Table1KeyPerformance Parameters Parameter Value Unit VDS 60 V RDS(on),max 2.8 mΩ ID 17 4 A SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D T ype/OrderingCode BSC028N06LS3 G Pac kage PG-TDSON-8 Marking 028N06LS Rela tedLinks - 1) J-STD2.


Infineon BSC028N06LS3

0 and JESD22 Final Data Sheet 1 Rev. 2.3,2020-09-14 OptiMOSTM3Power-Tran sistor,60V BSC028N06LS3G TableofCo ntents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


Infineon BSC028N06LS3

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .





Part

BSC028N06LS3

Description

MOSFET



Feature


BSC028N06LS3G MOSFET OptiMOSTM3Power- Transistor,60V Features •Idealfor highfrequencyswitchingandsync.rec . •OptimizedtechnologyforDC/DCco nverters •ExcellentgatechargexRD S(on)product(FOM) •Verylowon-res istanceRDS(on) •Superiorthermalr esistance •N-channel,logiclevel 100%avalanchetested •Pb-freepla ting;RoHScompliant •Qualifieda.
Manufacture

Infineon

Datasheet
Download BSC028N06LS3 Datasheet




 BSC028N06LS3
BSC028N06LS3G
MOSFET
OptiMOSTM3Power-Transistor,60V
Features
•Idealforhighfrequencyswitchingandsync.rec.
•OptimizedtechnologyforDC/DCconverters
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Superiorthermalresistance
•N-channel,logiclevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
2.8
m
ID
174
A
SuperSO8
8 7 65
56 78
1
23
4
4321
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
BSC028N06LS3 G
Package
PG-TDSON-8
Marking
028N06LS
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.3,2020-09-14




 BSC028N06LS3
OptiMOSTM3Power-Transistor,60V
BSC028N06LS3G
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.3,2020-09-14




 BSC028N06LS3
OptiMOSTM3Power-Transistor,60V
BSC028N06LS3G
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
ID
Pulsed drain current3)
Avalanche energy, single pulse4)
Gate source voltage
Power dissipation
Operating and storage temperature
ID,pulse
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-
-
-20
-
-
-55
Values
Typ. Max.
-
174
-
110
-
133
-
84
-
23
-
696
-
298
-
20
-
139
-
2.5
-
150
Unit Note/TestCondition
VGS=10V,TC=25°C
VGS=10V,TC=100°C
A VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W2)
A TC=25°C
mJ ID=50A,RGS=25
V-
W
TC=25°C
TA=25°C,RthJA=50K/W2)
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
minimal footprint
Device on PCB,
6 cm2 cooling area2)
RthJC
RthJA
RthJA
Min.
-
Values
Typ. Max.
-
0.9
Unit Note/TestCondition
K/W -
-
-
62 K/W -
-
-
50 K/W -
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.3,2020-09-14




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