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MOSFET. IRFH8202 Datasheet

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MOSFET. IRFH8202 Datasheet
















IRFH8202 MOSFET. Datasheet pdf. Equivalent













Part

IRFH8202

Description

MOSFET



Feature


VDSS 25 V RDS(on) max (@ VGS = 10V) Q g (typical) Rg (typical) ID (@TC (Botto m) = 25Β°C) 1.05 52 1.3 314 m nC β „¦ A StrongIRFETβ„’ IRFH8202TRPbF PQFN 5X6 mm Applications ο‚Ÿ OR-ing MOSFET for 12V (typical) Bus in-Rush Current ο‚Ÿ Battery Operated DC Motor Inverter MOSFET Features Low RDSon (<1.05 mΞ©) Low Thermal Resistance to PCB (< 0.8Β°C /W) Low Profile (< 0.9mm) Indus.
Manufacture

Infineon

Datasheet
Download IRFH8202 Datasheet


Infineon IRFH8202

IRFH8202; try-Standard Pinout Compatible with Exis ting Surface Mount Techniques RoHS Comp liant Containing no Lead, no Bromide an d no Halogen MSL1, Industrial Qualifica tion Benefits Lower Conduction Losses Enable better Thermal Dissipation Incre ased Power Density results in Multi-Ven dor Compatibility οƒž Easier Manufactur ing Environmentally Friendlier Increase d Reliability Order.


Infineon IRFH8202

able Part Number IRFH8202TRPbF Package Type PQFN 5mm x 6mm Standard Pack For m Quantity Tape and Reel 4000 Note Absolute Maximum Ratings Symbol VDS V GS ID @ TA = 25Β°C ID @ TA = 70Β°C ID @ TC(Bottom) = 25Β°C ID @ TC(Bottom) = 1 00Β°C IDM PD @TA = 25Β°C PD @TC(Bottom) = 25Β°C TJ TSTG Parameter Drain-to-So urce Voltage Gate-to-Source Voltage Con tinuous Drain Current, V.


Infineon IRFH8202

GS @ 10V  Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V  Continuous Drain Current, VGS @ 10V  Pulsed Drain Current  Power Dissipation ο‚… Power Dissipation ο‚„ Linear Derating Factor ο‚… Operati ng Junction and Storage Temperature Ran ge Notes  through  are on page 9 1 Max. 25 Β± 20 47 38 314 199 1256 3 .6 156 0.029 -55 to + 150 Units V V A .





Part

IRFH8202

Description

MOSFET



Feature


VDSS 25 V RDS(on) max (@ VGS = 10V) Q g (typical) Rg (typical) ID (@TC (Botto m) = 25Β°C) 1.05 52 1.3 314 m nC β „¦ A StrongIRFETβ„’ IRFH8202TRPbF PQFN 5X6 mm Applications ο‚Ÿ OR-ing MOSFET for 12V (typical) Bus in-Rush Current ο‚Ÿ Battery Operated DC Motor Inverter MOSFET Features Low RDSon (<1.05 mΞ©) Low Thermal Resistance to PCB (< 0.8Β°C /W) Low Profile (< 0.9mm) Indus.
Manufacture

Infineon

Datasheet
Download IRFH8202 Datasheet




 IRFH8202
VDSS
25
V
RDS(on) max
(@ VGS = 10V)
Qg (typical)
Rg (typical)
ID
(@TC (Bottom) = 25Β°C)
1.05
52
1.3
314
m
nC
Ω
A
StrongIRFETβ„’
IRFH8202TRPbF
PQFN 5X6 mm
Applications
ο‚Ÿ OR-ing MOSFET for 12V (typical) Bus in-Rush Current
ο‚Ÿ Battery Operated DC Motor Inverter MOSFET
Features
Low RDSon (<1.05 mΞ©)
Low Thermal Resistance to PCB (< 0.8Β°C/W)
Low Profile (< 0.9mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better Thermal Dissipation
Increased Power Density
results in Multi-Vendor Compatibility
οƒž Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable Part Number
IRFH8202TRPbF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25Β°C
ID @ TA = 70Β°C
ID @ TC(Bottom) = 25Β°C
ID @ TC(Bottom) = 100Β°C
IDM
PD @TA = 25Β°C
PD @TC(Bottom) = 25Β°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V 
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V 
Continuous Drain Current, VGS @ 10V 
Pulsed Drain Current 
Power Dissipation ο‚…
Power Dissipation ο‚„
Linear Derating Factor ο‚…
Operating Junction and
Storage Temperature Range
Notes  through  are on page 9
1
Max.
25
Β± 20
47
38
314
199
1256
3.6
156
0.029
-55 to + 150
Units
V
V
A
W
W/Β°C
Β°C
Rev. 2.4, 2021-01-29




 IRFH8202
IRFH8202TRPbF
Static @ TJ = 25Β°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy ο‚‚
IAR
Avalanche Current 
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
181
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
0.90
1.40
1.80
-6.3
–––
–––
–––
–––
–––
110
52
13
7.8
17
15
25
36
1.3
28
46
30
19
7174
1758
828
Max.
–––
–––
1.05
1.85
2.35
–––
5.0
150
100
-100
–––
–––
78
–––
–––
–––
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250Β΅A
V/Β°C Reference to 25Β°C, ID = 1.0mA
m
VGS = 10V, ID = 50A 
VGS = 4.5V, ID = 50A 
V
mV/Β°C
VDS = VGS, ID = 150Β΅A
Β΅A
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125Β°C
nA
VGS = 20V
VGS = -20V
S VDS = 13V, ID = 50A
nC VGS = 10V, VDS = 13V, ID = 50A
VDS = 13V
nC
VGS = 4.5V
ID = 50A
nC VDS = 16V, VGS = 0V

VDD = 13V, VGS = 4.5V
ns
ID = 50A
RG=1.8
VGS = 0V
pF VDS = 13V
Ζ’ = 1.0MHz
Typ.
–––
–––
Max.
468
50
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Thermal Resistance
Parameter
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case ο‚„
Junction-to-Case ο‚„
Junction-to-Ambient ο‚…
Junction-to-Ambient ο‚…
Min. Typ. Max. Units
Conditions
––– ––– 156
––– ––– 1256
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
D
G
S
––– ––– 1.0 V TJ = 25Β°C, IS = 50A, VGS = 0V 
––– 37 56 ns TJ = 25Β°C, IF = 50A, VDD = 13V
––– 68 102 nC di/dt = 200A/Β΅s 
Typ.
0.5
–––
–––
–––
Max.
0.8
15
35
21
Units
Β°C/W
2
Rev. 2.4, 2021-01-29




 IRFH8202
IRFH8202TRPbF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Rev. 2.4, 2021-01-29




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