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IGBT. MMG600WB065B6EN Datasheet

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IGBT. MMG600WB065B6EN Datasheet
















MMG600WB065B6EN IGBT. Datasheet pdf. Equivalent













Part

MMG600WB065B6EN

Description

IGBT



Feature


March 2017 PRODUCT FEATURES □ IGBT3 CH IP(Trench+Field Stop technology) □ Hi gh short circuit capability,self limiti ng short circuit current □ VCE(sat) w ith positive temperature coefficient Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Temperature sense included APPLICATIONS □ AC moto r control □ Motion/servo control.
Manufacture

MacMic

Datasheet
Download MMG600WB065B6EN Datasheet


MacMic MMG600WB065B6EN

MMG600WB065B6EN; □ Inverter and power supplies □ Pho tovoltaic/Fuel cell MMG600WB065B6EN P reliminary 650V 600A IGBT Module RoHS Compliant IGBT-inverter ABSOLUTE MAXI MUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Con ditions VCES VGES Collector Emitter V oltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetiti ve Peak Collector Current.


MacMic MMG600WB065B6EN

TC=25℃, TJmax=175℃ TC=60℃, TJmax =175℃ tp=1ms Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ Valu es Unit 650 V ±20 710 600 A 1200 1760 W Diode-inverter ABSOLUTE MAX IMUM RATINGS (T C =25°C unless otherwi se specified) Symbol Parameter/Test C onditions VRRM Repetitive Reverse Volt age TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak For.


MacMic MMG600WB065B6EN

ward Current tp=1ms I2t TJ =125℃, t =10ms, VR=0V Values 650 600 1200 19.8 Unit V A KA2S MacMic Science & Techno logy Co., Ltd. Add:#18, Hua Shan Zho ng Lu, New District, Changzhou City, Ji angsu Province, P. R .of China 1 Tel. :+86-519-85163708 Fax:+86-519-85162 291 Post Code:213022 Website :www.m acmicst.com MMG600WB065B6EN IGBT-inve rter ELECTRICAL CHARACTERISTI.





Part

MMG600WB065B6EN

Description

IGBT



Feature


March 2017 PRODUCT FEATURES □ IGBT3 CH IP(Trench+Field Stop technology) □ Hi gh short circuit capability,self limiti ng short circuit current □ VCE(sat) w ith positive temperature coefficient Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Temperature sense included APPLICATIONS □ AC moto r control □ Motion/servo control.
Manufacture

MacMic

Datasheet
Download MMG600WB065B6EN Datasheet




 MMG600WB065B6EN
March 2017
PRODUCT FEATURES
IGBT3 CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
MMG600WB065B6EN
Preliminary
650V 600A IGBT Module
RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=60, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
650
V
±20
710
600
A
1200
1760
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
650
600
1200
19.8
Unit
V
A
KA2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMG600WB065B6EN
MMG600WB065B6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=9.6mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=600A, VGE=15V, TJ=25
IC=600A, VGE=15V, TJ=125
IC=600A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=650V, VGE=0V, TJ=25
VCE=650V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=600A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=300V,IC=600A
RG =1.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=300V,IC=600A
RG =1.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=300V,IC=600A
RG =1.7,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc6µS , VGE=15V
TJ=150,VCC=360V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
4.9
-600
Typ.
5.8
1.45
1.6
1.7
0.7
6.5
39
1.15
120
140
110
120
500
560
70
90
5
6
6.5
24
27.5
28.5
3000
Max. Unit
6.5
1.9
V
1
mA
5
mA
600 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.085 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=600A , VGE=0V, TJ=25
VF
Forward Voltage
IF=600A , VGE=0V, TJ=125
IF=600A , VGE=0V, TJ=150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=600A , VR=300V
dIF/dt=-5000A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.55 1.95
1.50
V
1.45
450
ns
300
A
47
µC
12.6
mJ
0.15 K /W
2




 MMG600WB065B6EN
MMG600WB065B6EN
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50 R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
Min. Typ. Max. Unit
5
K
3375
K
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
RecommendedM5
RecommendedM6
Weight
Values
Unit
175
-40~150
-40~125
3000
V
225
2.5~5
Nm
3~5
Nm
350
g
1200
1000
800
25
150
600
400
200
VGE=15V
0
0
0.5
1
1.5
2
2.5
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
1200
1000
800
600
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
400
200
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter




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