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IGBT. MMG600WB120B6E4N Datasheet

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IGBT. MMG600WB120B6E4N Datasheet
















MMG600WB120B6E4N IGBT. Datasheet pdf. Equivalent













Part

MMG600WB120B6E4N

Description

IGBT



Feature


May 2016 PRODUCT FEATURES □ IGBT4 CHIP (Trench+Field Stop technology) □ Low saturation voltage and positive tempera ture coefficient □ Fast switching and short tail current □ Free wheeling d iodes with fast and soft reverse recove ry □ Temperature sense included MMG6 00WB120B6E4N Preliminary 1200V 600A I GBT Module RoHS Compliant APPLICATIONS □ AC motor control □ Motion.
Manufacture

MacMic

Datasheet
Download MMG600WB120B6E4N Datasheet


MacMic MMG600WB120B6E4N

MMG600WB120B6E4N; /servo control □ Inverter and power su pplies □ Photovoltaic/Fuel cell IGBT -inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Sy mbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VG ES Gate Emitter Voltage IC DC Collec tor Current TC=25℃, TJmax=175℃ TC= 100℃, TJmax=175℃ ICM Repetitive P eak Collector Current tp=1ms Pt.


MacMic MMG600WB120B6E4N

ot Power Dissipation Per IGBT TC=25℃ , TJmax=175℃ Values Unit 1200 V ± 20 915 600 A 1200 3125 W Diode-i nverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Sym bol Parameter/Test Conditions VRRM Re petitive Reverse Voltage TJ=25℃ IF( AV) Average Forward Current IFRM Rep etitive Peak Forward Current tp=1ms I 2t TJ =150℃, t=10ms, VR=0.


MacMic MMG600WB120B6E4N

V Values Unit 1200 V 600 A 1200 37 500 A2S MacMic Science & Technology C o., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.:+86 -519-85163708 Fax:+86-519-85162291 Po st Code:213022 Website :www.macmics t.com MMG600WB120B6E4N IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) .





Part

MMG600WB120B6E4N

Description

IGBT



Feature


May 2016 PRODUCT FEATURES □ IGBT4 CHIP (Trench+Field Stop technology) □ Low saturation voltage and positive tempera ture coefficient □ Fast switching and short tail current □ Free wheeling d iodes with fast and soft reverse recove ry □ Temperature sense included MMG6 00WB120B6E4N Preliminary 1200V 600A I GBT Module RoHS Compliant APPLICATIONS □ AC motor control □ Motion.
Manufacture

MacMic

Datasheet
Download MMG600WB120B6E4N Datasheet




 MMG600WB120B6E4N
May 2016
PRODUCT FEATURES
IGBT4 CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
MMG600WB120B6E4N
Preliminary
1200V 600A IGBT Module
RoHS Compliant
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=175
TC=100, TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
915
600
A
1200
3125
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =150, t=10ms, VR=0V
Values
Unit
1200
V
600
A
1200
37500
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMG600WB120B6E4N
MMG600WB120B6E4N
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=23mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=600A, VGE=15V, TJ=25
IC=600A, VGE=15V, TJ=125
IC=600A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=600A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=600A
RG =1.5,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=600A
RG =1.5,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=600A
RG =1.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
ISC
Short Circuit Current
TJ=150
tpsc10µS , VGE=15V
TJ=150,VCC=800V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.2
-400
Typ.
5.8
1.75
2.00
2.05
1.2
4.4
37
2.05
160
210
90
100
480
650
70
120
62.5
83
90
47
72
79.5
2400
Max. Unit
6.4
2.1
V
3
mA
10 mA
400 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.048 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=600A , VGE=0V, TJ=25
IF=600A , VGE=0V, TJ=125
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=600A , VGE=0V, TJ=150
IF=600A , VR=600V
dIF/dt=-5100A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.65
2.1
1.65
V
1.65
450
A
130
µC
51
mJ
0.081 K /W
2




 MMG600WB120B6E4N
MMG600WB120B6E4N
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50 R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
Min. Typ. Max. Unit
5
K
3375
K
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
RecommendedM5
RecommendedM6
Weight
Values
Unit
175
-40~150
-40~125
3000
V
225
2.5~5
Nm
3~5
Nm
350
g
1200
1000
800
25
150
600
400
200
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
1200
1000
800
600
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
400
200
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter




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