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IGBT. MMG600WB170B Datasheet

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IGBT. MMG600WB170B Datasheet
















MMG600WB170B IGBT. Datasheet pdf. Equivalent













Part

MMG600WB170B

Description

IGBT



Feature


February 2016 PRODUCT FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP(Hig hly rugged SPT+ design) □ VCE(sat) wi th positive temperature coefficient □ Ultra Low Loss,High Ruggedness □ Fre e wheeling diodes with fast and soft re verse recovery □ Temperature sense in cluded APPLICATIONS □ AC motor contro l □ Motion/servo control □ Inver.
Manufacture

MacMic

Datasheet
Download MMG600WB170B Datasheet


MacMic MMG600WB170B

MMG600WB170B; ter and power supplies □ Photovoltaic/ Fuel cell MMG600WB170B Version 01 17 00V 600A IGBT Module RoHS Compliant IG BT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Coll ector Current ICM Repetitive Peak Col lector Current Ptot P.


MacMic MMG600WB170B

ower Dissipation Per IGBT TC=25℃ TC=1 00℃ tp=1ms Values Unit 1700 V ±20 900 600 A 1200 3750 W Diode-inv erter ABSOLUTE MAXIMUM RATINGS (T C =2 5°C unless otherwise specified) Symbo l Parameter/Test Conditions VRRM Repe titive Reverse Voltage TJ=25℃ IF(AV ) Average Forward Current TC=25℃ I FRM Repetitive Peak Forward Current t p=1ms I2t TJ =150℃, t=10ms.


MacMic MMG600WB170B

, VR=0V Values Unit 1700 V 600 A 12 00 40000 A2S MacMic Science & Techno logy Co., Ltd. Add:#18, Hua Shan Zho ng Lu, New District, Changzhou City, Ji angsu Province, P. R .of China 1 Tel. :+86-519-85163708 Fax:+86-519-85162 291 Post Code:213022 Website :www.m acmicst.com MMG600WB170B IGBT-inverte r ELECTRICAL CHARACTERISTICS (T C =25° C unless otherwise specified).





Part

MMG600WB170B

Description

IGBT



Feature


February 2016 PRODUCT FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP(Hig hly rugged SPT+ design) □ VCE(sat) wi th positive temperature coefficient □ Ultra Low Loss,High Ruggedness □ Fre e wheeling diodes with fast and soft re verse recovery □ Temperature sense in cluded APPLICATIONS □ AC motor contro l □ Motion/servo control □ Inver.
Manufacture

MacMic

Datasheet
Download MMG600WB170B Datasheet




 MMG600WB170B
February 2016
PRODUCT FEATURES
High short circuit capability,self limiting short circuit current
IGBT CHIP(Highly rugged SPT+ design)
VCE(sat) with positive temperature coefficient
Ultra Low Loss,High Ruggedness
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
MMG600WB170B
Version 01
1700V 600A IGBT Module
RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
TC=25
TC=100
tp=1ms
Values
Unit
1700
V
±20
900
600
A
1200
3750
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =150, t=10ms, VR=0V
Values
Unit
1700
V
600
A
1200
40000
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMG600WB170B
MMG600WB170B
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=24mA
VCE(sat)
Collector Emitter
Saturation Voltage
chip
terminal
IC=600A, VGE=15V, TJ=25
IC=600A, VGE=15V, TJ=150
IC=600A, VGE=15V, TJ=25
IC=600A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1700V, VGE=0V, TJ=25
VCE=1700V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Qg
Gate Charge
VCE=900V, IC=600A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=900V,IC=600A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=900V,IC=600A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=900V,IC=600A
RG =2.4,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
ISC
Short Circuit Current
TJ=150
tpsc10µS , VGE=15V
TJ=150,VCC=1000V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.4
-500
Typ.
6.2
2.25
2.6
2.7
3.1
4
36.6
2.15
210
250
190
200
630
730
180
320
270
340
350
152
200
215
1920
Max. Unit
7.4
2.6
V
3.1
3
mA
20 mA
500 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.04 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
chip
terminal
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
IF=600A , VGE=0V, TJ=25
IF=600A , VGE=0V, TJ=150
IF=600A , VGE=0V, TJ=25
IF=600A , VGE=0V, TJ=150
IF=600A , VR=900V
dIF/dt=-3000A/μs
TJ =150
Erec
Reverse Recovery Energy
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.8
2.2
1.95
V
2.3
2.7
2.45
1200
ns
360
A
215
µC
140
mJ
0.09 K /W
2




 MMG600WB170B
MMG600WB170B
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50 R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
Min. Typ. Max. Unit
5
K
3375
K
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
RecommendedM5
RecommendedM6
Weight
Values
Unit
175
-40~150
-40~125
4000
V
225
2.5~5
Nm
3~5
Nm
350
g
1200
1000
800
25
150
600
400
200
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
1200
1000
800
600
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
400
TJ=150
200
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter




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