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IGBT. MMG800K060U6EN Datasheet

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IGBT. MMG800K060U6EN Datasheet
















MMG800K060U6EN IGBT. Datasheet pdf. Equivalent













Part

MMG800K060U6EN

Description

IGBT



Feature


May 2015 MMG800K060U6EN 600V 800A IGBT Module Version 01 RoHS Compliant PR ODUCT FEATURES □ IGBT3 CHIP(Trench+Fi eld Stop technology) □ High short cir cuit capability,self limiting short cir cuit current □ VCE(sat) with positive temperature coefficient □ Fast switc hing and short tail current □ Free wh eeling diodes with fast and soft revers e recovery □ Low switching l.
Manufacture

MacMic

Datasheet
Download MMG800K060U6EN Datasheet


MacMic MMG800K060U6EN

MMG800K060U6EN; osses □ 10K Ω Gate Protected Resista nce Inside APPLICATIONS □ High Power Converters □ Medical applications Motion/servo control □ UPS systems/ Wind Turbines IGBT-Inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions VCES Collector Emitter Vo ltage TJ=25℃ VGES Gate Emitter Vol tage IC DC Collector Current TC=25 TC=60℃ ICM Repetitive Peak Col.


MacMic MMG800K060U6EN

lector Current tp=1ms Ptot Power Diss ipation Per IGBT T C =25°C unless oth erwise specified Values Unit 600 V 20 950 800 A 1600 2100 W Revers e-Diode ABSOLUTE MAXIMUM RATINGS Symb ol Parameter/Test Conditions T C =25 C unless otherwise specified Values Unit VRRM Repetitive Reverse Voltage TJ=25℃ 600 V IF(AV) IFRM Average Forward Current Repeti.


MacMic MMG800K060U6EN

tive Peak Forward Current TC=25℃ tp=1 ms 800 A 1600 I2t TJ =125℃, t=10ms , VR=0V 51200 A2S MacMic Science & T echnology Co., Ltd. Add:#18, Hua Sha n Zhong Lu, New District, Changzhou Cit y, Jia ngsu Province, P. R .of China 1 Tel.:+86-519-85163708 Fax:+86-519 -85162291 Post Code:213022 Website: www.macmicst.com MMG800K060U6EN IGBT- Inverter ELECTRICAL CHARACTERIST.





Part

MMG800K060U6EN

Description

IGBT



Feature


May 2015 MMG800K060U6EN 600V 800A IGBT Module Version 01 RoHS Compliant PR ODUCT FEATURES □ IGBT3 CHIP(Trench+Fi eld Stop technology) □ High short cir cuit capability,self limiting short cir cuit current □ VCE(sat) with positive temperature coefficient □ Fast switc hing and short tail current □ Free wh eeling diodes with fast and soft revers e recovery □ Low switching l.
Manufacture

MacMic

Datasheet
Download MMG800K060U6EN Datasheet




 MMG800K060U6EN
May 2015
MMG800K060U6EN
600V 800A IGBT Module
Version 01
RoHS Compliant
PRODUCT FEATURES
IGBT3 CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
10K Gate Protected Resistance Inside
APPLICATIONS
High Power Converters
Medical applications
Motion/servo control
UPS systems/Wind Turbines
IGBT-Inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=60
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
600
V
±20
950
800
A
1600
2100
W
Reverse-Diode
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
600
V
IF(AV)
IFRM
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
800
A
1600
I2t
TJ =125, t=10ms, VR=0V
51200
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMG800K060U6EN
MMG800K060U6EN
IGBT-Inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE, IC=12.8mA
4.9 5.8 6.5
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
IC=800A, VGE=15V, TJ=25
IC=800A, VGE=15V, TJ=125
VCE=600V, VGE=0V, TJ=25
VCE=600V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
1.45
1.6
-400
0.5
1.9 V
1 mA
10 mA
400 nA
Qg
Gate Charge
VCE=300V, IC=800A , VGE=±15V
8.6
µC
Cies
Cres
td(on)
tr
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
VCE=25V, VGE=0V, f =1MHz
VCC=300V,IC=800A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
52
nF
1.6
nF
260
ns
290
ns
70
ns
90
ns
td(off)
tf
Eon
Eoff
ISC
Turn off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit Current
VCC=300V,IC=800A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=300V,IC=800A
RG =1.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc6µS , VGE=15V
TJ=125,VCC=360V
450
ns
520
ns
90
ns
100
ns
11
mJ
17
mJ
25
mJ
29
mJ
3500
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.07 K /W
Reverse-Diode
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VF
Forward Voltage
IF=800A , VGE=0V, TJ=25
IF=800A , VGE=0V, TJ=125
1.55 1.9
V
1.5
IRRM
QRR
Erec
Max. Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
IF=800A , VR=300V
dIF/dt=-9000A/μs
TJ =125
950
A
65
µC
17.6
mJ
RthJCD
Junction to Case Thermal Resistance Per Diode
0.12 K /W
2




 MMG800K060U6EN
MMG800K060U6EN
MODULE CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Values
Unit
TJmax
Max. Junction Temperature
175
TJop
Operating Temperature
-40~150
Tstg
Storage Temperature
-40~125
Visol
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
3000
V
to heatsink
RecommendedM6
3~5
Nm
Torque to terminal
RecommendedM6
2.5~5
Nm
to terminal
RecommendedM4
0.7~1.1
Nm
Weight
330
g
1600
1200
25
125
800
400
0
0.0 0.5 1.0 1.5 2.0 2.5
VCEV
Figure 1. Typical Output Characteristics
IGBT-Inverter
1600
1200
800
VCE=20V
25
125
400
0
6 7 8 9 10 11 12
VGEV
Figure 3. Typical Transfer Characteristics
IGBT-Inverter
1600
1200
800
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
TJ=125
400
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-Inverter
80
VCE=300V
IC=800A
60
VGE=±15V
TJ=125
40
20
Eon
Eoff
0
0
1
2
3
4
5
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-Inverter
3




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