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IGBT. MMGT25H120XB6C Datasheet

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IGBT. MMGT25H120XB6C Datasheet
















MMGT25H120XB6C IGBT. Datasheet pdf. Equivalent













Part

MMGT25H120XB6C

Description

IGBT



Feature


September 2015 MMGT25H120XB6C 1200V 25 A PIM Module Version 0 RoHS Compliant PRODUCT FEATURES □ High level of in tegration □ IGBT CHIP(Trench+Field St op technology) □ Low saturation volta ge and positive temperature coefficient □ Fast switching and short tail curr ent □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulate.
Manufacture

MacMic

Datasheet
Download MMGT25H120XB6C Datasheet


MacMic MMGT25H120XB6C

MMGT25H120XB6C; d copper base plate and soldering pins f or PCB mounting □ Temperature sense i ncluded APPLICATIONS □ AC motor contr ol □ Motion/servo control □ Inverte r and power supplies Rectifier+Brake+I nverter IGBT-inverter ABSOLUTE MAXIMU M RATINGS(T C =25°C unless otherwise s pecified) Symbol Parameter/Test Condi tions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter.


MacMic MMGT25H120XB6C

Voltage IC DC Collector Current TC=2 5℃ TC=100℃ ICM Repetitive Peak Co llector Current tp=1ms Ptot Power Di ssipation Per IGBT Diode-inverter ABS OLUTE MAXIMUM RATINGS (T C =25°C unles s otherwise specified) Symbol Paramet er/Test Conditions VRRM Repetitive Re verse Voltage TJ=25℃ IF(AV) Averag e Forward Current TC=25℃ IFRM Repe titive Peak Forward Current.


MacMic MMGT25H120XB6C

tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values 1200 ±20 40 25 50 192 Unit V A W Values 1200 25 50 200 Unit V A A 2S MacMic Science & Technology Co., Lt d. Add:#18, Hua Shan Zhong Lu, New Di strict, Changzhou City, Jiangsu Provinc e, P. R .of China Tel.:+86-519-851637 08 Fax:+86-519-85162291 Post Code:2 13022 Website:www.macmicst.com 1 MMG T25H120XB6C IGBT-inverter ELEC.





Part

MMGT25H120XB6C

Description

IGBT



Feature


September 2015 MMGT25H120XB6C 1200V 25 A PIM Module Version 0 RoHS Compliant PRODUCT FEATURES □ High level of in tegration □ IGBT CHIP(Trench+Field St op technology) □ Low saturation volta ge and positive temperature coefficient □ Fast switching and short tail curr ent □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulate.
Manufacture

MacMic

Datasheet
Download MMGT25H120XB6C Datasheet




 MMGT25H120XB6C
September 2015
MMGT25H120XB6C
1200V 25A PIM Module
Version 0
RoHS Compliant
PRODUCT FEATURES
High level of integration
IGBT CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=100
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
1200
±20
40
25
50
192
Unit
V
A
W
Values
1200
25
50
200
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




 MMGT25H120XB6C
MMGT25H120XB6C
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE, IC=1mA
VCE(sat)
Collector - Emitter
Saturation Voltage
ICES
Collector Leakage Current
IC=25A, VGE=15V, TJ=25
IC=25A, VGE=15V, TJ=125
IC=25A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=25A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=25A
RG =20,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
TJ=150
TJ=25
VCC=600V,IC=25A
RG =20,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
VCC=600V,IC=25A
RG =20,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
tpsc10µS , VGE=15V
TJ=125,VCC=600V
RthJC
Junction to Case Thermal Resistance (Per IGBT)
Min.
5.0
-400
Typ.
5.8
1.85
2.15
2.25
0
0.145
3.5
40
30
40
45
35
40
45
200
240
260
80
150
170
2.6
2.8
2
2.2
Max. Unit
6.5
2.3
V
100 µA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
150
A
0.78 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=25A , VGE=0V, TJ =25
VF
Forward Voltage
IF=25A , VGE=0V, TJ =125
IF=25A , VGE=0V, TJ=150
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=25A , VR=600V
dIF/dt=-900A/μs
TJ =150
Erec
Reverse Recovery Energy
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.9
1.65
1.6
260
40
5.1
1.9
Max. Unit
2.4
V
ns
A
µC
mJ
1.2 K /W
2




 MMGT25H120XB6C
MMGT25H120XB6C
Diode-RECTIFIER
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current Per Diode
IFRMS
R.M.S. Forward Current Per Diode
TC=80
IRMS
R.M.S. Current at rectifier output
Non Repetitive Surge
IFSM
Forward Current
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
I2t
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
Values
1600
40
60
80
500
550
1250
1255
Unit
V
A
A2S
Diode-RECTIFIER
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=25A , TJ =25
IF=25A , TJ =150
IR
Reverse Leakage Current
VR=1600V, TJ=25
VR=1600V, TJ=150
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
0.98
0.9
Max. Unit
V
V
50 µA
1 mA
0.8 K /W
IGBT-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=100
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ=125, t=10ms, VR=0V
Values
1200
±20
40
25
50
192
Unit
V
A
W
Values
1200
25
50
200
Unit
V
A
A2S
3




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