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IGBT. MMGT50W120XB6C Datasheet

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IGBT. MMGT50W120XB6C Datasheet
















MMGT50W120XB6C IGBT. Datasheet pdf. Equivalent













Part

MMGT50W120XB6C

Description

IGBT



Feature


September 2015 MMGT50W120XB6C 1200V 50 A PIM Module Version 0 RoHS Compliant PRODUCT FEATURES □ High level of in tegration □ IGBT CHIP(Trench+Field St op technology) □ Low saturation volta ge and positive temperature coefficient □ Fast switching and short tail curr ent □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulate.
Manufacture

MacMic

Datasheet
Download MMGT50W120XB6C Datasheet


MacMic MMGT50W120XB6C

MMGT50W120XB6C; d copper base plate and soldering pins f or PCB mounting □ Temperature sense i ncluded APPLICATIONS □ AC motor contr ol □ Motion/servo control □ Inverte r and power supplies Rectifier+Brake+I nverter IGBT-inverter ABSOLUTE MAXIMU M RATINGS(T C =25°C unless otherwise s pecified) Symbol Parameter/Test Condi tions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter.


MacMic MMGT50W120XB6C

Voltage IC DC Collector Current TC=2 5℃ TC=100℃ ICM Repetitive Peak Co llector Current tp=1ms Ptot Power Di ssipation Per IGBT Diode-inverter ABS OLUTE MAXIMUM RATINGS (T C =25°C unles s otherwise specified) Symbol Paramet er/Test Conditions VRRM Repetitive Re verse Voltage TJ=25℃ IF(AV) Averag e Forward Current TC=25℃ IFRM Repe titive Peak Forward Current.


MacMic MMGT50W120XB6C

tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values 1200 ±20 75 50 100 340 Unit V A W Values 1200 50 100 800 Unit V A A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Provi nce, P. R .of China Tel.:+86-519-8516 3708 Fax:+86-519-85162291 Post Code 213022 Website:www.macmicst.com 1 M MGT50W120XB6C IGBT-inverter E.





Part

MMGT50W120XB6C

Description

IGBT



Feature


September 2015 MMGT50W120XB6C 1200V 50 A PIM Module Version 0 RoHS Compliant PRODUCT FEATURES □ High level of in tegration □ IGBT CHIP(Trench+Field St op technology) □ Low saturation volta ge and positive temperature coefficient □ Fast switching and short tail curr ent □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulate.
Manufacture

MacMic

Datasheet
Download MMGT50W120XB6C Datasheet




 MMGT50W120XB6C
September 2015
MMGT50W120XB6C
1200V 50A PIM Module
Version 0
RoHS Compliant
PRODUCT FEATURES
High level of integration
IGBT CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=100
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
1200
±20
75
50
100
340
Unit
V
A
W
Values
1200
50
100
800
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




 MMGT50W120XB6C
MMGT50W120XB6C
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=2mA
IC=50A, VGE=15V, TJ=25
IC=50A, VGE=15V, TJ=125
IC=50A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=50A , VGE=15V
VCE=25V, VGE=0V, f =1MHz
TJ=25
VCC=600V,IC=50A
RG =10,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
VCC=600V,IC=50A
RG =10,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
VCC=600V,IC=50A
RG =10,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
tpsc10µS , VGE=15V
TJ=125,VCC=600V
RthJC
Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
5.8
1.85
2.15
2.25
4
0.27
7.5
66
95
100
100
50
54
58
250
280
290
80
150
170
5.6
6.5
4.5
4.8
Max. Unit
6.5
2.3
V
100 µA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
300
A
0.44 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=50A , VGE=0V, TJ =25
VF
Forward Voltage
IF=50A , VGE=0V, TJ =125
IF=50A , VGE=0V, TJ=150
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=50A , VR=600V
dIF/dt=-1200A/μs
TJ =150
Erec
Reverse Recovery Energy
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.9
1.65
1.6
270
70
9.6
3.6
Max. Unit
2.4
V
ns
A
µC
mJ
0.72 K /W
2




 MMGT50W120XB6C
MMGT50W120XB6C
Diode-RECTIFIER
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IFRMS
IRMS
R.M.S. Forward Current Per Diode
R.M.S. Current at rectifier output
TC=80
Non Repetitive Surge
IFSM
Forward Current
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
I2t
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
Values
1600
80
140
1000
1100
5000
5021
Unit
V
A
A2S
Diode-RECTIFIER
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=50A , TJ =25
IF=50A , TJ =150
IR
Reverse Leakage Current
VR=1600V, TJ=25
VR=1600V, TJ=150
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
0.99
0.95
Max. Unit
V
V
50 µA
1 mA
0.5 K /W
IGBT-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=100
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ=125, t=10ms, VR=0V
Values
1200
±20
60
40
80
258
Unit
V
A
W
Values
1200
40
80
392
Unit
V
A
A2S
3




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