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IGBT. MMGT75H120X6C Datasheet

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IGBT. MMGT75H120X6C Datasheet
















MMGT75H120X6C IGBT. Datasheet pdf. Equivalent













Part

MMGT75H120X6C

Description

IGBT



Feature


September 2015 MMGT75H120X6C Version 0 1200V 75A Six-Pack Module RoHS Compli ant PRODUCT FEATURES □ High level of integration □ IGBT CHIP(Trench+Field Stop technology) □ Low saturation vo ltage and positive temperature coeffici ent □ Fast switching and short tail c urrent □ Free wheeling diodes with fa st and soft reverse recovery □ Indust ry standard package with insul.
Manufacture

MacMic

Datasheet
Download MMGT75H120X6C Datasheet


MacMic MMGT75H120X6C

MMGT75H120X6C; ated copper base plate and soldering pin s for PCB mounting □ Temperature sens e included APPLICATIONS □ AC motor co ntrol □ Motion/servo control □ Inve rter and power supplies IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C un less otherwise specified) Symbol Para meter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate E mitter Voltage IC DC Collec.


MacMic MMGT75H120X6C

tor Current TC=25℃ TC=100℃ ICM Re petitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT Dio de-inverter ABSOLUTE MAXIMUM RATINGS ( T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRR M Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current TC=2 5℃ IFRM Repetitive Peak Forward Cur rent tp=1ms I2t TJ =125℃.


MacMic MMGT75H120X6C

, t=10ms, VR=0V Values 1200 ±20 115 75 150 440 Unit V A W Values 1200 75 15 0 1800 Unit V A A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Sha n Zhong Lu, New District, Changzhou Cit y, Jiangsu Province, P. R .of China Tel .:+86-519-85163708 Fax:+86-519-8516 2291 Post Code:213022 Website:www.m acmicst.com 1 IGBT-inverter ELECTRICA L CHARACTERISTICS (T C =25°C .





Part

MMGT75H120X6C

Description

IGBT



Feature


September 2015 MMGT75H120X6C Version 0 1200V 75A Six-Pack Module RoHS Compli ant PRODUCT FEATURES □ High level of integration □ IGBT CHIP(Trench+Field Stop technology) □ Low saturation vo ltage and positive temperature coeffici ent □ Fast switching and short tail c urrent □ Free wheeling diodes with fa st and soft reverse recovery □ Indust ry standard package with insul.
Manufacture

MacMic

Datasheet
Download MMGT75H120X6C Datasheet




 MMGT75H120X6C
September 2015
MMGT75H120X6C
Version 0
1200V 75A Six-Pack Module
RoHS Compliant
PRODUCT FEATURES
High level of integration
IGBT CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=100
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
1200
±20
115
75
150
440
Unit
V
A
W
Values
1200
75
150
1800
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




 MMGT75H120X6C
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=3mA
IC=75A, VGE=15V, TJ=25
IC=75A, VGE=15V, TJ=125
IC=75A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=75A , VGE=15V
VCE=25V, VGE=0V, f =1MHz
TJ=25
VCC=600V,IC=75A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
VCC=600V,IC=75A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
VCC=600V,IC=75A
RG =7.5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
tpsc10µS , VGE=15V
TJ=125,VCC=600V
RthJC
Junction to Case Thermal Resistance Per IGBT
MMGT75H120X6C
Min.
5.0
-400
Typ.
5.8
1.85
2.15
2.25
10
0.39
11
100
300
310
310
78
82
84
320
350
360
80
150
160
9.2
10.1
6.7
7.0
Max. Unit
6.5
2.3
V
100 µA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
450
A
0.34 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=75A , VGE=0V, TJ=25
VF
Forward Voltage
IF=75A , VGE=0V, TJ=125
IF=75A , VGE=0V, TJ=150
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=75A , VR=600V
dIF/dt=-1000A/μs
TJ =150
Erec
Reverse Recovery Energy
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.9
1.65
1.6
360
68
12.8
4.5
Max. Unit
2.4
V
ns
A
µC
mJ
0.6 K /W
2




 MMGT75H120X6C
MMGT75H120X6C
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50
R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
Md
Mounting Torque
RecommendedM5
Weight
Min. Typ. Max. Unit
5
K
3375
K
Values
175
-40~150
-40~125
3000
>200
2.5~5
180
Unit
V
Nm
g
150
25
125
150
100
VGE=15V
75
50
25
0
0 0.5 1 1.5 2 2.5 3 3.5
VCEV
Figure 1. Typical Output Characteristics
IGBT-inverter
150
125
100
75
Vge=17V
Vge=15V
Vge=13V
Vge=10V
Vge=8V
50
TJ=150
25
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-inverter
150
125
VCE=20V
25
100
150
75
50
25
0
6 7 8 9 10 11 12
VGEV
Figure 3. Typical Transfer Characteristics
IGBT-inverter
25
VCE=600V
20
IC=75A
VGE=±15V
TJ=150
15
10
5
Eon
Eoff
0
0 10 20 30 40 50
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-inverter
3




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