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IGBT. MMGT100W120X6C Datasheet

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IGBT. MMGT100W120X6C Datasheet
















MMGT100W120X6C IGBT. Datasheet pdf. Equivalent













Part

MMGT100W120X6C

Description

IGBT



Feature


September 2015 MMGT100W120X6C Version 0 1200V 100A Six-Pack Module RoHS Comp liant PRODUCT FEATURES □ High level of integration □ IGBT CHIP(Trench+Fie ld Stop technology) □ Low saturation voltage and positive temperature coeffi cient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Indu stry standard package with ins.
Manufacture

MacMic

Datasheet
Download MMGT100W120X6C Datasheet


MacMic MMGT100W120X6C

MMGT100W120X6C; ulated copper base plate and soldering p ins for PCB mounting □ Temperature se nse included APPLICATIONS □ AC motor control □ Motion/servo control □ In verter and power supplies IGBT-inverte r ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Pa rameter/Test Conditions VCES Collecto r Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Coll.


MacMic MMGT100W120X6C

ector Current TC=25℃ TC=100℃ ICM Repetitive Peak Collector Current tp=1 ms Ptot Power Dissipation Per IGBT D iode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified ) Symbol Parameter/Test Conditions V RRM Repetitive Reverse Voltage TJ=25 IF(AV) Average Forward Current TC =25℃ IFRM Repetitive Peak Forward C urrent tp=1ms I2t TJ =12.


MacMic MMGT100W120X6C

5℃, t=10ms, VR=0V Values 1200 ±20 15 0 100 200 576 Unit V A W Values 1200 100 200 3200 Unit V A A2S MacMic Scie nce & Technology Co., Ltd. Add:#18, H ua Shan Zhong Lu, New District, Changzh ou City, Jiangsu Province, P. R .of Chi na Tel.:+86-519-85163708 Fax:+86-51 9-85162291 Post Code:213022 Website www.macmicst.com 1 MMGT100W120X6C IG BT-inverter ELECTRICAL CHARACT.





Part

MMGT100W120X6C

Description

IGBT



Feature


September 2015 MMGT100W120X6C Version 0 1200V 100A Six-Pack Module RoHS Comp liant PRODUCT FEATURES □ High level of integration □ IGBT CHIP(Trench+Fie ld Stop technology) □ Low saturation voltage and positive temperature coeffi cient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Indu stry standard package with ins.
Manufacture

MacMic

Datasheet
Download MMGT100W120X6C Datasheet




 MMGT100W120X6C
September 2015
MMGT100W120X6C
Version 0
1200V 100A Six-Pack Module
RoHS Compliant
PRODUCT FEATURES
High level of integration
IGBT CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=100
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
1200
±20
150
100
200
576
Unit
V
A
W
Values
1200
100
200
3200
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




 MMGT100W120X6C
MMGT100W120X6C
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=4mA
IC=100A, VGE=15V, TJ=25
IC=100A, VGE=15V, TJ=125
IC=100A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=100A , VGE=15V
VCE=25V, VGE=0V, f =1MHz
TJ=25
VCC=600V,IC=100A
RG =5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
VCC=600V,IC=100A
RG =5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
VCC=600V,IC=100A
RG =5,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
tpsc10µS , VGE=15V
TJ=125,VCC=600V
RthJC
Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
5.8
1.75
2.05
2.1
7.5
0.5
14.5
140
300
310
310
75
80
85
320
350
360
80
150
160
12
13
9
9.5
Max. Unit
6.5
2.25
V
100 µA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
600
A
0.26 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=100A , VGE=0V, TJ=25
VF
Forward Voltage
IF=100A , VGE=0V, TJ=125
IF=100A , VGE=0V, TJ=150
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=100A , VR=600V
dIF/dt=-1400A/μs
TJ =150
Erec
Reverse Recovery Energy
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.9
1.65
1.6
300
120
15.6
6.2
Max. Unit
2.4
V
ns
A
µC
mJ
0.4 K /W
2




 MMGT100W120X6C
MMGT100W120X6C
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50
R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
Md
Mounting Torque
RecommendedM5
Weight
Min. Typ. Max. Unit
5
K
3375
K
Values
175
-40~150
-40~125
3000
>200
2.5~5
300
Unit
V
Nm
g
200
25
150
150
VGE=15V
100
50
200
150
100
50
Vge=17V
Vge=15V
Vge=13V
Vge=10V
Vge=8V
TJ=150
0
0 0.5 1 1.5 2 2.5 3 3.5
VCEV
Figure 1. Typical Output Characteristics
IGBT-inverter
200
VCE=20V
150
25
150
100
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-inverter
40
VCE=600V
IC=100A
30
VGE=±15V
TJ=150
20
50
0
6 7 8 9 10 11 12
VGEV
Figure 3. Typical Transfer Characteristics
IGBT-inverter
10
0
0
Eon
Eoff
10 20 30 40 50
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-inverter
3




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