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IGBT. MMGT200Q120B6C Datasheet

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IGBT. MMGT200Q120B6C Datasheet
















MMGT200Q120B6C IGBT. Datasheet pdf. Equivalent













Part

MMGT200Q120B6C

Description

IGBT



Feature


June 2018 PRODUCT FEATURES □ IGBT CHIP (Trench+Field Stop technology) □ High short circuit capability,self limiting short circuit current □ VCE(sat) wit h positive temperature coefficient □ Fast switching and short tail current Free wheeling diodes with fast and s oft reverse recovery □ Low switching losses APPLICATIONS □ High frequency switching application □ Medical .
Manufacture

MacMic

Datasheet
Download MMGT200Q120B6C Datasheet


MacMic MMGT200Q120B6C

MMGT200Q120B6C; applications □ Motion/servo control UPS systems MMGT200Q120B6C Version 01 1200V 200A IGBT Module RoHS Complia nt IGBT-inverter ABSOLUTE MAXIMUM RAT INGS(T C =25°C unless otherwise specif ied) Symbol Parameter/Test Conditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25.


MacMic MMGT200Q120B6C

℃, TJmax=175℃ TC=105℃, TJmax=175 tp=1ms Ptot Power Dissipation Per I GBT TC=25℃, TJmax=175℃ Values Un it 1200 V ±20 320 200 A 400 1250 W Diode-inverter ABSOLUTE MAXIMUM R ATINGS (T C =25°C unless otherwise spe cified) Symbol Parameter/Test Conditi ons VRRM Repetitive Reverse Voltage T J=25℃ IF(AV) Average Forward Curren t IFRM Repetitive Peak Forward C.


MacMic MMGT200Q120B6C

urrent tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 200 A 40 0 7750 A2S MacMic Science & Technolo gy Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jian gsu Province, P. R .of China 1 Tel. +86-519-85163708 Fax:+86-519-8516229 1 Post Code:213022 Website :www.mac micst.com MMGT200Q120B6C IGBT-inverte r ELECTRICAL CHARACTERISTICS .





Part

MMGT200Q120B6C

Description

IGBT



Feature


June 2018 PRODUCT FEATURES □ IGBT CHIP (Trench+Field Stop technology) □ High short circuit capability,self limiting short circuit current □ VCE(sat) wit h positive temperature coefficient □ Fast switching and short tail current Free wheeling diodes with fast and s oft reverse recovery □ Low switching losses APPLICATIONS □ High frequency switching application □ Medical .
Manufacture

MacMic

Datasheet
Download MMGT200Q120B6C Datasheet




 MMGT200Q120B6C
June 2018
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
MMGT200Q120B6C
Version 01
1200V 200A IGBT Module
RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=105, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
320
200
A
400
1250
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
200
A
400
7750
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMGT200Q120B6C
MMGT200Q120B6C
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=8mA
VCE(sat)
Collector - Emitter
Saturation Voltage
IC=200A, VGE=15V, TJ=25
IC=200A, VGE=15V, TJ=125
IC=200A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=200A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=200A
RG =2.7,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=200A
RG =2.7,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=200A
RG =2.7,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150,VCC=600V
RthJC Junction to Case Thermal Resistance (Per IGBT)
Min.
5.2
-400
Typ.
6.0
1.75
1.95
2.05
3.8
0.98
27.2
560
160
180
190
70
80
85
360
420
450
160
270
300
27
30
22
24
920
Max. Unit
6.5
2.2
V
1
mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.12 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=200A , VGE=0V, TJ =25
VF
Forward Voltage
IF=200A , VGE=0V, TJ =125
IF=200A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=200A , VR=600V
dIF/dt=-2600A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
Min. Typ. Max. Unit
1.7
2.15
1.65
V
1.65
460
ns
200
A
42
µC
14.5
mJ
0.22 K /W




 MMGT200Q120B6C
MMGT200Q120B6C
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM5
Weight
Values
Unit
175
-40~150
-40~125
3000
V
200
3~5
Nm
2.5~5
Nm
200
g
400
25
150
300
200
100
VGE=15V
0
0 0.5 1 1.5 2 2.5 3 3.5
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
400
Vge=17V
Vge=15V
300
Vge=13V
Vge=11V
Vge=9V
200
100
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter




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