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100A Thyristor/Diode. MMK150T160UX6J Datasheet

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100A Thyristor/Diode. MMK150T160UX6J Datasheet
















MMK150T160UX6J Thyristor/Diode. Datasheet pdf. Equivalent













Part

MMK150T160UX6J

Description

1600V 100A Thyristor/Diode



Feature


August 2014 Preliminary MMK150T160UX6J 1600V 100A Thyristor/Diode Module RoHS Compliant PRODUCT FEATURES Elect rically Isolated by DBC Ceramic H igh Surge Current Capability Low Inductance Package APPLICATIONS  DC Motor Control and Drives Batte ry Charges ,Heater controls,Light dimme rs Static switches MAXIMUM VOLTA GE RATINGS Module Type MMK150T160UX6J T C.
Manufacture

MacMic

Datasheet
Download MMK150T160UX6J Datasheet


MacMic MMK150T160UX6J

MMK150T160UX6J; =25°C unless otherwise specified VRRM /VDRM VRSM Unit 1600 1700 V ABSOL UTE MAXIMUM RATINGS (Thyristor) Symbol Parameter/Test Conditions IT(AV) IT( RMS) ITSM I2t Average On-State Current R.M.S. On-State Current Single phase, half wave, 180°conduction, Tc= 80°C Non-Repetitive Surge On-State Current 1/2 cycle, 50/60HZ, peak value, Tc =45 C I2t (For Fusing) .


MacMic MMK150T160UX6J

1/2 cycle, 50/60HZ, peak value ,Tc =45° C TJ Junction Temperature(Thyristor) Values 150 225 3600/3800 64.8/59.8 -40 to +125 Unit A KA2S °C ABSOLUTE MAX IMUM RATINGS (Diode) Symbol Parameter /Test Conditions IF(AV) IF(RMS) IFSM I 2t Average Forward Current R.M.S. Forw ard Current Non-Repetitive Surge Forwar d Current For Fusing Single phase, hal f wave, 180°conducti.


MacMic MMK150T160UX6J

on, Tc= 95°C 1/2 cycle, 50/60HZ, peak v alue, Tc =45°C 1/2 cycle, 50/60HZ, pea k value ,Tc =45°C TJ Junction Temper ature(Diode) Values 150 225 1700/1800 14.4/13.4 -40 to +150 Unit A KA2S °C MacMic Science & Technology Co., Ltd. 1 Add:#18, Hua Shan Zhong Lu, New D istrict, Changzhou City, Jia ngsu Provi nce, P. R .of China Tel.:+86-519-851 63708 Fax:+86-519-85162291.




Part

MMK150T160UX6J

Description

1600V 100A Thyristor/Diode



Feature


August 2014 Preliminary MMK150T160UX6J 1600V 100A Thyristor/Diode Module RoHS Compliant PRODUCT FEATURES Elect rically Isolated by DBC Ceramic H igh Surge Current Capability Low Inductance Package APPLICATIONS  DC Motor Control and Drives Batte ry Charges ,Heater controls,Light dimme rs Static switches MAXIMUM VOLTA GE RATINGS Module Type MMK150T160UX6J T C.
Manufacture

MacMic

Datasheet
Download MMK150T160UX6J Datasheet




 MMK150T160UX6J
August 2014 Preliminary
MMK150T160UX6J
1600V 100A Thyristor/Diode Module
RoHS Compliant
PRODUCT FEATURES
Electrically Isolated by DBC Ceramic
High Surge Current Capability
Low Inductance Package
APPLICATIONS
DC Motor Control and Drives
Battery Charges ,Heater controls,Light dimmers
Static switches
MAXIMUM VOLTAGE RATINGS
Module Type
MMK150T160UX6J
T C =25°C unless otherwise specified
VRRM/VDRM
VRSM
Unit
1600
1700
V
ABSOLUTE MAXIMUM RATINGS (Thyristor)
Symbol
Parameter/Test Conditions
IT(AV)
IT(RMS)
ITSM
I2t
Average On-State Current
R.M.S. On-State Current
Single phase, half wave, 180°conduction, Tc= 80°C
Non-Repetitive Surge On-State Current 1/2 cycle, 50/60HZ, peak value, Tc =45°C
I2t (For Fusing)
1/2 cycle, 50/60HZ, peak value ,Tc =45°C
TJ
Junction Temperature(Thyristor)
Values
150
225
3600/3800
64.8/59.8
-40 to +125
Unit
A
KA2S
°C
ABSOLUTE MAXIMUM RATINGS (Diode)
Symbol
Parameter/Test Conditions
IF(AV)
IF(RMS)
IFSM
I2t
Average Forward Current
R.M.S. Forward Current
Non-Repetitive Surge Forward Current
For Fusing
Single phase, half wave, 180°conduction, Tc= 95°C
1/2 cycle, 50/60HZ, peak value, Tc =45°C
1/2 cycle, 50/60HZ, peak value ,Tc =45°C
TJ
Junction Temperature(Diode)
Values
150
225
1700/1800
14.4/13.4
-40 to +150
Unit
A
KA2S
°C
MacMic Science & Technology Co., Ltd.
1
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMK150T160UX6J
MMK150T160UX6J
ELECTRICAL CHARACTERISTICS (Thyristor)
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
IDRM
Maximum Peak Off-State Current
VD = VDRM, TJ = 125°C
IRRM
Maximum Peak Reverse Current
VR = VRRM, TJ = 125°C
Min. Typ. Max. Unit
25 mA
25
VTM
Maximum on-state voltage drop
ITM=150A,td=10 ms, half sine
1.18 V
VTO
For power-loss calculations only
rT
TJ = 125°C
VA=6V, RA=1,TJ = -40°C
0.9 V
2.0 m
4.0
VGT
Max. required DC gate voltage to trigger VA=6V, RA=1
VA=6V, RA=1,TJ = 125°C
0.8 2.5 V
1.7
VA=6V, RA=1,TJ = -40°C
270
IGT
Max. required DC gate current to trigger VA=6V, RA=1
65 150 mA
VA=6V, RA=1,TJ = 125°C
80
VGD
Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125°C
IGD
Max. required DC gate current not to trigger,VD = VDRM, TJ = 125°C
0.25 V
6 mA
IH
Maximum holding current
200 400 mA
IL
Maximum latching current
250 500 mA
PGM
PG(AV)
Maximum peak gate power
Maximum average gate power
12
W
3.0
IGM
Maximum peak gate current
3.0 A
-VGM
Maximum peak negative gate voltage
10 V
dv/dt
Critical Rate of Rise of Off-State Voltage,TJ=125°C,exponential to 67% rated
VDRM
1000 V/μs
di/dt
Max.Rate of Rise of Turned-on Current, TJ =125°C,ITM=500A, rated VDRM
150 A/μs
ELECTRICAL CHARACTERISTICS (Diode)
Symbol
Parameter/Test Conditions
IRM
Maximum Reverse Leakage Current
VR = VRRM
VR = VRRM, TJ = 125°C
VF
Forward Voltage Drop
IF=150A
VTO
rT
For power-loss calculations only , TJ = 125°C
Min.
Typ.
Max. Unit
0.5 mA
10
1.25 V
0.9 V
2.2 m
MODULE CHARACTERISTICS
TSTG
VISO
Torque
Storage Temperature Range
Isolation Breakdown Voltage
to heatsink
T C =25°C unless otherwise specified
-40 to +125 °C
AC, 50Hz(R.M.S), t=1minute
3000
V
RecommendedM6
35
N.m
Torque to terminal
RecommendedM6
35
N.m
Rth(J-C) Junction-to-Case Thermal Resistance(Per Thyristor/Per Diode)
0.18/0.45 K /W
Weight
330
g
2




 MMK150T160UX6J
300
25°C
250
200
150
100
50
0
0.8
Thyristor
Diode
1
1.2
1.4
1.6
VTM/VF(V)
Figure1. Forward Voltage Drop vs Forward Current
3000
2500
2000
1500
1000
500
0
1
Thyristor
Diode
50HZ
10
100
Cycles
Figure3. Diode and SCR Max Non-Repetitive Surge
1
MMK150T160UX6J
300
Thyristor
180°
250
Diode
200
120°
150
DC
100
50
0
0
θ:Conduction Angle
40 80 120 160 200
IT/IF(AV)(A)
Figure2. Power dissipation vs. IT/IF(AV)
160
180°
120
80
Thyristor
Diode
40
θ:Conduction Angle
0
0 25 50 75 100 125 150
TC(°C
Figure4. Diode IF(AV) and SCR IT(AV)vs.TC
0.1
0.01
Thyristor
Diode
0.001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
3
Figure5. Transient Thermal Impedance of Diode and SCR




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