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160A Thyristor/Diode. MMK160S Datasheet

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160A Thyristor/Diode. MMK160S Datasheet
















MMK160S Thyristor/Diode. Datasheet pdf. Equivalent













Part

MMK160S

Description

160A Thyristor/Diode



Feature


May 2015 MMK160S 160A Thyristor/Diode Module Version 01 RoHS Compliant PRO DUCT FEATURES Electrically Isolated by DBC Ceramic High Surge Current Capabili ty Low Inductance Package APPLICATIONS DC Motor Control and Drives Battery Ch arges ,Heater controls,Light dimmers St atic switches MAXIMUM VOLTAGE RATINGS Module Type MMK160S120B MMK160S120UK MM K160S140B MMK160S1.
Manufacture

MacMic

Datasheet
Download MMK160S Datasheet


MacMic MMK160S

MMK160S; 40UK MMK160S160B MMK160S160UK MMK160S12 0UA MMK160S140UA MMK160S160UA T C =25 C unless otherwise specified VRRM/VDR M VRSM Unit 1200 1300 1400 1500 V 1600 1700 ABSOLUTE MAXIMUM RATINGS (Thyristor) Symbol Parameter/Test Co nditions IT(AV) IT(RMS) ITSM I2t Aver age On State Current R.M.S. On State Cu rrent Single phase, half wave, 180°co nduction, Tc= 80℃ N.


MacMic MMK160S

on-Repetitive Surge On-State Current 1/2 cycle, 50/60HZ, peak value, Tc =45℃ For Fusing 1/2 cycle, 50/60HZ, peak v alue ,Tc =45℃ TJ Junction Temperatu re(Thyristor) Values 160 250 3300/3600 54.4/53.7 -40 to +125 Unit A KA2S ℃ ABSOLUTE MAXIMUM RATINGS (Diode) Sym bol Parameter/Test Conditions IF(AV) IF(RMS) Average Forward Current R.M.S. Forward Current Single.


MacMic MMK160S

phase, half wave, 180°conduction, Tc= 95℃ IFSM Non-Repetitive Surge Forwa rd Current 1/2 cycle, 50/60HZ, peak val ue, Tc =45℃ I2t For Fusing 1/2 cyc le, 50/60HZ, peak value ,Tc =45℃ TJ Junction Temperature(Diode) Values 16 0 250 5500/6000 151.2/149.4 -40 to +150 Unit A KA2S ℃ MacMic Science & Tec hnology Co., Ltd. Add:#18, Hua Shan Z hong Lu, New District, Changz.





Part

MMK160S

Description

160A Thyristor/Diode



Feature


May 2015 MMK160S 160A Thyristor/Diode Module Version 01 RoHS Compliant PRO DUCT FEATURES Electrically Isolated by DBC Ceramic High Surge Current Capabili ty Low Inductance Package APPLICATIONS DC Motor Control and Drives Battery Ch arges ,Heater controls,Light dimmers St atic switches MAXIMUM VOLTAGE RATINGS Module Type MMK160S120B MMK160S120UK MM K160S140B MMK160S1.
Manufacture

MacMic

Datasheet
Download MMK160S Datasheet




 MMK160S
May 2015
MMK160S
160A Thyristor/Diode Module
Version 01
RoHS Compliant
PRODUCT FEATURES
Electrically Isolated by DBC Ceramic
High Surge Current Capability
Low Inductance Package
APPLICATIONS
DC Motor Control and Drives
Battery Charges ,Heater controls,Light dimmers
Static switches
MAXIMUM VOLTAGE RATINGS
Module Type
MMK160S120B MMK160S120UK
MMK160S140B MMK160S140UK
MMK160S160B MMK160S160UK
MMK160S120UA
MMK160S140UA
MMK160S160UA
T C =25°C unless otherwise specified
VRRM/VDRM
VRSM
Unit
1200
1300
1400
1500
V
1600
1700
ABSOLUTE MAXIMUM RATINGS (Thyristor)
Symbol
Parameter/Test Conditions
IT(AV)
IT(RMS)
ITSM
I2t
Average On State Current
R.M.S. On State Current
Single phase, half wave, 180°conduction, Tc= 80
Non-Repetitive Surge On-State Current 1/2 cycle, 50/60HZ, peak value, Tc =45
For Fusing
1/2 cycle, 50/60HZ, peak value ,Tc =45
TJ
Junction Temperature(Thyristor)
Values
160
250
3300/3600
54.4/53.7
-40 to +125
Unit
A
KA2S
ABSOLUTE MAXIMUM RATINGS (Diode)
Symbol
Parameter/Test Conditions
IF(AV)
IF(RMS)
Average Forward Current
R.M.S. Forward Current
Single phase, half wave, 180°conduction, Tc= 95
IFSM
Non-Repetitive Surge Forward Current 1/2 cycle, 50/60HZ, peak value, Tc =45
I2t
For Fusing
1/2 cycle, 50/60HZ, peak value ,Tc =45
TJ
Junction Temperature(Diode)
Values
160
250
5500/6000
151.2/149.4
-40 to +150
Unit
A
KA2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




 MMK160S
MMK160S
ELECTRICAL CHARACTERISTICS (Thyristor)
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
IDRM
IRRM
Maximum Peak Off-State Current
Maximum Peak Reverse Current
VD = VDRM, TJ = 125
VR = VRRM, TJ = 125
25 mA
25
VTM
Maximum on-state voltage drop
ITM=500A,td=10 ms, half sine
1.75 V
VTO
For power-loss calculations only
rT
TJ = 125
0.85 V
2.0 m
VA=6V, RA=1,TJ = -40
4.0
VGT
Max. required DC gate voltage to trigger VA=6V, RA=1
1.0 2.5 V
VA=6V, RA=1,TJ = 125
1.7
VA=6V, RA=1,TJ = -40
270
IGT
Max. required DC gate current to trigger VA=6V, RA=1
75 150 mA
VA=6V, RA=1,TJ = 125
80
VGD
Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125
0.25 V
IGD
Max. required DC gate current not to trigger,VD = VDRM, TJ = 125
6 mA
IH
Maximum holding current
100 200 mA
IL
Maximum latching current
200 400 mA
PGM
PG(AV)
Maximum peak gate power
Maximum average gate power
12
W
3.0
IGM
Maximum peak gate current
3.0 A
-VGM
Maximum peak negative gate voltage
10 V
dv/dt
Critical Rate of Rise of Off-State Voltage,TJ=125,exponential to 67% rated
VDRM
1000 V/μs
di/dt
Max.Rate of Rise of Turned-on Current, TJ =125,ITM=500A, rated VDRM
150 A/μs
ELECTRICAL CHARACTERISTICS (Diode)
Symbol
Parameter/Test Conditions
IRM
Maximum Reverse Leakage Current
VR = VRRM
VR = VRRM, TJ = 125
VF
Forward Voltage Drop
IF=500A
VTO
rT
For power-loss calculations only , TJ = 125°C
Min.
Typ.
Max. Unit
0.5 mA
10
1.5 V
0.88 V
1.25 m
MODULE CHARACTERISTICS
T C =25°C unless otherwise specified
TJ
Junction Temperature
-40 to +125
TSTG
Storage Temperature Range
-40 to +125
VISO
Torque
Isolation Breakdown Voltage
to heatsink
AC, 50Hz(R.M.S), t=1minute
RecommendedM6
3000
35
Torque to terminal
RecommendedM6
35
Rth(J-C) Junction-to-Case Thermal Resistance(Per Thyristor/Per Diode)
0.16/0.18
Weight
160
V
N.m
N.m
K /W
g
2




 MMK160S
600
500
25
400
Thyristor
300
Diode
200
max.
100
0
0 0.5 1 1.5 2 2.5
VTM/VF(V)
Figure1. Forward Voltage Drop vs Forward Current
6000
5000
4000
3000
2000
1000
0
1
Thyristor
Diode
50HZ
10
100
Cycles
Figure3. Diode and SCR Max Non-Repetitive Surge
1
250
Thyristor
Diode
200
MMK160S
180°
150
120°
100
50
0
0
DC
θ:Conduction Angle
40
80
120 160
IT/IF(AV)(A)
Figure2. Power dissipation vs. IT/IF(AV)
200
180°Conduction Angle
160
120
80
Thyristor
Diode
40
0
0 25 50 75 100 125 150
TC(℃)
Figure4. Diode IF(AV) and SCR IT(AV)vs.TC
0.1
0.01
Thyristor
Diode
0.001
0.001
0.01
0.1
1
Rectangular Pulse Duration (S)
Figure5. Transient Thermal Impedance of Diode and SCR
10
3




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