DatasheetsPDF.com

Thyristor/Diode. MMK200S Datasheet

DatasheetsPDF.com

Thyristor/Diode. MMK200S Datasheet
















MMK200S Thyristor/Diode. Datasheet pdf. Equivalent













Part

MMK200S

Description

Thyristor/Diode



Feature


December 2014 MMK200S MMK200S Thyristo r/Diode Module Version 03 RoHS Compli ant PRODUCT FEATURES Electricall y Isolated by DBC Ceramic High Su rge Current Capability Low Induct ance Package APPLICATIONS DC Mot or Control and Drives Battery Cha rges ,Heater controls,Light dimmers  Static switches MAXIMUM VOLTAGE RAT INGS Module Type MMK200S080B MMK200S080UK .
Manufacture

MacMic

Datasheet
Download MMK200S Datasheet


MacMic MMK200S

MMK200S; MMK200S120B MMK200S120UK MMK200S140B MMK 200S140UK MMK200S160B MMK200S160UK MMK2 00S180B MMK200S180UK MMK200S200B MMK200 S200UK MMK200S220B MMK200S220UK MMK200 S080UA MMK200S120UA MMK200S140UA MMK200 S160UA MMK200S180UA MMK200S200UA MMK200 S220UA T C =25°C unless otherwise spe cified VRRM/VDRM VRSM Unit 800 900 1200 1300 1400 1500 1600 1700 V 1800 1900 2000 .


MacMic MMK200S

2100 2200 2300 ABSOLUTE MAXIMUM RATI NGS (Thyristor) Symbol Parameter/Test Conditions IT(AV) IT(RMS) Average On State Current R.M.S. On State Current Single phase, half wave, 180°conducti on, TC= 80°C ITSM Non Repetitive Sur ge On State Current 1/2 cycle, 50/60Hz, peak value, TC =45°C I2t I2t (For F using) 1/2 cycle, 50/60Hz, peak value ,TC =45°C TJ Juncti.


MacMic MMK200S

on Temperature(Thyristor) Values Unit 200 310 A 5000/5400 125/121 KA2S - 40 to +125 °C ABSOLUTE MAXIMUM RATING S (Diode) Symbol Parameter/Test Condi tions IF(AV) IF(RMS) Average Forward Current R.M.S. Forward Current Single phase, half wave, 180°conduction, TC= 95°C IFSM Non Repetitive Surge Forwa rd Current 1/2 cycle, 50/60Hz, peak val ue, TC =45°C I2t Fo.





Part

MMK200S

Description

Thyristor/Diode



Feature


December 2014 MMK200S MMK200S Thyristo r/Diode Module Version 03 RoHS Compli ant PRODUCT FEATURES Electricall y Isolated by DBC Ceramic High Su rge Current Capability Low Induct ance Package APPLICATIONS DC Mot or Control and Drives Battery Cha rges ,Heater controls,Light dimmers  Static switches MAXIMUM VOLTAGE RAT INGS Module Type MMK200S080B MMK200S080UK .
Manufacture

MacMic

Datasheet
Download MMK200S Datasheet




 MMK200S
December 2014
MMK200S
MMK200S Thyristor/Diode Module
Version 03
RoHS Compliant
PRODUCT FEATURES
Electrically Isolated by DBC Ceramic
High Surge Current Capability
Low Inductance Package
APPLICATIONS
DC Motor Control and Drives
Battery Charges ,Heater controls,Light dimmers
Static switches
MAXIMUM VOLTAGE RATINGS
Module Type
MMK200S080B MMK200S080UK
MMK200S120B MMK200S120UK
MMK200S140B MMK200S140UK
MMK200S160B MMK200S160UK
MMK200S180B MMK200S180UK
MMK200S200B MMK200S200UK
MMK200S220B MMK200S220UK
MMK200S080UA
MMK200S120UA
MMK200S140UA
MMK200S160UA
MMK200S180UA
MMK200S200UA
MMK200S220UA
T C =25°C unless otherwise specified
VRRM/VDRM
VRSM
Unit
800
900
1200
1300
1400
1500
1600
1700
V
1800
1900
2000
2100
2200
2300
ABSOLUTE MAXIMUM RATINGS (Thyristor)
Symbol
Parameter/Test Conditions
IT(AV)
IT(RMS)
Average On State Current
R.M.S. On State Current
Single phase, half wave, 180°conduction, TC= 80°C
ITSM
Non Repetitive Surge On State Current 1/2 cycle, 50/60Hz, peak value, TC =45°C
I2t
I2t (For Fusing)
1/2 cycle, 50/60Hz, peak value ,TC =45°C
TJ
Junction Temperature(Thyristor)
Values Unit
200
310
A
5000/5400
125/121 KA2S
-40 to +125 °C
ABSOLUTE MAXIMUM RATINGS (Diode)
Symbol
Parameter/Test Conditions
IF(AV)
IF(RMS)
Average Forward Current
R.M.S. Forward Current
Single phase, half wave, 180°conduction, TC= 95°C
IFSM
Non Repetitive Surge Forward Current 1/2 cycle, 50/60Hz, peak value, TC =45°C
I2t
For Fusing
1/2 cycle, 50/60Hz, peak value ,TC =45°C
Values
200
310
6800/7300
231.2/221.1
Unit
A
KA2S
MacMic Science & Technology Co., Ltd.
1
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMK200S
MMK200S
ELECTRICAL CHARACTERISTICS (Thyristor)
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
IDRM
Maximum Peak Off-State Current
VD = VDRM, TJ = 125°C
IRRM
Maximum Peak Reverse Current
VR = VRRM, TJ = 125°C
VTM
Maximum on state voltage drop
ITM=500A,td=10 ms, half sine
VTO
For power loss calculations only
rT
TJ = 125°C
Min.
Typ.
Max. Unit
25
mA
25
1.75 V
0.80 V
2.0
VA=6V, RA=1Ω,TJ = -40°C
4.0
VGT
Max. required DC gate voltage to trigger VA=6V, RA=1Ω
1.0 2.5 V
VA=6V, RA=1Ω,TJ = 125°C
1.7
VA=6V, RA=1Ω,TJ = -40°C
270
IGT
Max. required DC gate current to trigger VA=6V, RA=1Ω
75 150 mA
VA=6V, RA=1Ω,TJ = 125°C
80
VGD
IGD
IH
IL
PGM
PG(AV)
IGM
-VGM
Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125°C
Max. required DC gate current not to trigger,VD = VDRM, TJ = 125°C
Maximum holding current
Maximum latching current
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
0.25 V
6 mA
100 200 mA
200 400 mA
12 W
3.0
3.0 A
10 V
dv/dt
Critical Rate of Rise of Off-State Voltage,TJ=125°C,exponential to 67% rated
VDRM
1000 V/μs
di/dt
Max.Rate of Rise of Turned on Current, TJ =125°C,ITM=500A, rated VDRM
150 A/μs
ELECTRICAL CHARACTERISTICS (Diode)
Symbol
Parameter/Test Conditions
IRM
Maximum Reverse Leakage Current
VR = VRRM
VR = VRRM, TJ = 125°C
VF
Forward Voltage Drop
IF=500A
VTO
rT
For power-loss calculations only , TJ = 125°C
Min.
Typ.
Max. Unit
0.5 mA
10
1.5 V
0.9 V
1.0
MODULE CHARACTERISTICS
TJ
TSTG
VISO
Junction Temperature
Storage Temperature Range
Isolation Breakdown Voltage
T C =25°C unless otherwise specified
-40 to +125 °C
-40 to +125 °C
AC, 50Hz(R.M.S), t=1minute
3000
V
Torque to heatsink
RecommendedM6
35
Nm
Torque to terminal
RecommendedM6
35
Nm
RthJC
Junction-to-Case Thermal Resistance(Per Thyristor/Per Diode)
0.12/0.14 K /W
Weight
160
2g




 MMK200S
600
25°C
500
400
300
max.
200
100
0
0
Thyristor
Diode
1
2
3
VTM/VF(V)
Figure 1. Forward Voltage Drop vs Forward
Current
8000
6000
Thyristor
Diode
4000
2000
50Hz
0
1
10
100
Cycles
Figure 3. Diode and SCR Max Non-Repetitive Surge
1
MMK200S
300
Thyristor
250
Diode
180°
200
120°
150
DC
100
50
0
0
θ:Conduction
Angle
40 80 120 160 200
IT/IF(AV)(A)
Figure 2. Power dissipation vs. IT/IF(AV)
200
180°
Thyristor
160
Diode
120
80
40 θ:Conduction Angle
0
0 25 50 75 100 125 150
TC°C
Figure 4. Diode IF(AV) and SCR IT(AV)vs.TC
0.1
0.01
0.001
0.001
0.01
0.1
Thyristor
Diode
1
Rectangular Pulse Duration (seconds)
Figure 5. Transient Thermal Impedance of Diode and SCR
10
3
MMK200S




Recommended third-party MMK200S Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)