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Power MOSFET. MMN400A006U1 Datasheet

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Power MOSFET. MMN400A006U1 Datasheet
















MMN400A006U1 MOSFET. Datasheet pdf. Equivalent













Part

MMN400A006U1

Description

60V 400A N-ch Power MOSFET



Feature


August 2016 MMN400A006U1 60V 400A N-ch Power MOSFET Module Preliminary RoHS Compliant PRODUCT FEATURES □ RDS(ON ).typ=0.35mΩ@VGS=10V □ 175℃operat ing temperature □ Low Gate Charge Min imize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected R esistance Inside □ Inside the module, each MOSFET chip has a gate resistance: 2.2Ω APPLICATIONS □ High efficiency.
Manufacture

MacMic

Datasheet
Download MMN400A006U1 Datasheet


MacMic MMN400A006U1

MMN400A006U1; DC/DC Converters □ ISG EV Products UPS inverter Type MMN400A006U1 VDS 60V ID 400A RDS(ON).max TJ=25℃ 0.75 mΩ TJmax 175℃ Marking MMN400A006U 1 Package NA ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VD SS Drain - Source Voltage TJ=25℃ VG SS Gate - Source Voltage ID Continuou s Drain Current TC=25℃, TJmax=.


MacMic MMN400A006U1

175℃ TC=110℃, TJmax=175℃ IDM Pul sed Drain Current at VGS=10V Limited b y TJmax PD Maximum Power Dissipation TC=25℃, TJmax=175℃ EAS Single Pu lse Avalanche Energy VDD=50V,L=1mH Va lues Unit 60 V ±20 610 400 A 800 1000 W TBD mJ THERMAL AND MODULE CHARACTERISTICS (T C =25°C unless othe rwise specified) Symbol Parameter/Tes t Conditions RthJC Thermal re.


MacMic MMN400A006U1

sistance,junction to case Per MOSFET TJ max Max. Junction Temperature TSTG Sto rage Temperature Range to heatsink Tor que to terminal Recommended(M5) Re commended(M5) Values Unit 0.15 K/W 175 ℃ -40~125 2.5~5 Nm 2.5 5 Weight 110 g MacMic Science & T echnology Co., Ltd. Add:#18, Hua Sha n Zhong Lu, New District, Changzhou Cit y, Jiangsu Province, P. R .of China .




Part

MMN400A006U1

Description

60V 400A N-ch Power MOSFET



Feature


August 2016 MMN400A006U1 60V 400A N-ch Power MOSFET Module Preliminary RoHS Compliant PRODUCT FEATURES □ RDS(ON ).typ=0.35mΩ@VGS=10V □ 175℃operat ing temperature □ Low Gate Charge Min imize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected R esistance Inside □ Inside the module, each MOSFET chip has a gate resistance: 2.2Ω APPLICATIONS □ High efficiency.
Manufacture

MacMic

Datasheet
Download MMN400A006U1 Datasheet




 MMN400A006U1
August 2016
MMN400A006U1
60V 400A N-ch Power MOSFET Module
Preliminary
RoHS Compliant
PRODUCT FEATURES
RDS(ON).typ=0.35m@VGS=10V
175operating temperature
Low Gate Charge Minimize Switching Loss
Fast Recovery body Diode
20K Gate Protected Resistance Inside
Inside the module,each MOSFET chip has a gate resistance:2.2
APPLICATIONS
High efficiency DC/DC Converters
ISG EV Products
UPS inverter
Type
MMN400A006U1
VDS
60V
ID
400A
RDS(ON).max TJ=25
0.75m
TJmax
175
Marking
MMN400A006U1
Package
NA
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VDSS Drain - Source Voltage
TJ=25
VGSS Gate - Source Voltage
ID
Continuous Drain Current
TC=25, TJmax=175
TC=110, TJmax=175
IDM
Pulsed Drain Current at VGS=10V
Limited by TJmax
PD
Maximum Power Dissipation
TC=25, TJmax=175
EAS
Single Pulse Avalanche Energy
VDD=50V,L=1mH
Values
Unit
60
V
±20
610
400
A
800
1000
W
TBD
mJ
THERMAL AND MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
RthJC Thermal resistance,junction to case Per MOSFET
TJmax Max. Junction Temperature
TSTG Storage Temperature Range
to heatsink
Torque
to terminal
RecommendedM5
RecommendedM5
Values
Unit
0.15
K/W
175
-40125
2.55
Nm
2.55
Weight
110
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMN400A006U1
MMN400A006U1
MOSFET
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
V(BR)DSS Drain Source Breakdown Voltage
VGS=0V, ID=1mA
RDS(ON) Drain Source ON Resistance
VGS=10V, ID=400A
IDSS
Drain Source Leakage Current
VDS=60V,VGS=0V
VGS(th) Gate Threshold Voltage
VGS= VDS , ID=1mA
IGSS
Gate Leakage Current
VDS=0V,VGS=±20V
Rgint
Integrated Gate Resistor
Qg
Total Gate Charge
Qgs
Gate Source Charge
VDD=30V, ID=200A , VGS=10V
Qgd
Gate Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
VDS=25V, VGS=0V, f =1MHz
Crss
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
VDD=30V,ID=300A,
RG =1.5,
VGS=10V,
Resistive Load
TJ=25
Min. Typ. Max. Unit
60
V
0.35 0.75 m
2
mA
2.0
4.0
V
-2
2
mA
1.05
675
nC
223
nC
208
nC
37
nF
5
nF
1.8
nF
170
ns
210
ns
260
ns
80
ns
Source-Drain BODY-DIODE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
Min. Typ.
ISD
Continuous Source Drain Current
ISDM
Pulse Source Drain Current
Limited by TJmax
VSD
Forward Voltage
IS=400A , VGS=0V
0.85
trr
Reverse Recovery time
IF=100A , VGS=0V
140
QRR
Reverse Recovery Charge
dIF/dt=-100A/μs
550
Max. Unit
400
A
800
A
1.2
V
ns
nC
2




 MMN400A006U1
MMN400A006U1
10
800
Vgs=15V
8
25
Vgs=10V
600
150
Vgs=8V
6
Vgs=6V
400
Vgs=5.5V
4
2
200
TJ=25
0
5
7
9
11
13
15
VGSV
Figure 1. Typical RDS(ON) vs Gate Voltage
0.5
Vgs=10V
0.4
Vgs=15V
0.3
0
0
1
2
3
4
5
VDSV
Figure 2. Typical Output Characteristics
800
600
25
400
150
0.2
200
0.1
0
200
400
600
800
IDA
Figure 3. Drain-Source ON Resistance vs ID
3.2
2.8
VGS=10V
ID=400A
2.4
2
1.6
1.2
0.8
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ()
Figure 5. Drain-Source ON Resistance vs Junction
3
Temperature
0
0.3 0.5 0.7 0.9 1.1 1.3
VSDV
Figure 4. Source-Drain Voltage
10
VDS=30V
8
ID=200A
6
4
2
0
0
150 300 450 600 750
Qg(nc)
Figure 6. Gate Charge characteristics




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