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Power MOSFET. MMN400A010U1 Datasheet

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Power MOSFET. MMN400A010U1 Datasheet
















MMN400A010U1 MOSFET. Datasheet pdf. Equivalent













Part

MMN400A010U1

Description

100V 400A N-ch Power MOSFET



Feature


August 2016 MMN400A010U1 100V 400A N-c h Power MOSFET Module Preliminary RoH S Compliant PRODUCT FEATURES □ RDS(O N).typ=1.1mΩ@VGS=10V □ 175℃operat ing temperature □ Low Gate Charge Min imize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected R esistance Inside □ Inside the module, each MOSFET chip has a gate resistance: 2.2Ω APPLICATIONS □ High efficiency.
Manufacture

MacMic

Datasheet
Download MMN400A010U1 Datasheet


MacMic MMN400A010U1

MMN400A010U1; DC/DC Converters □ ISG EV Products UPS inverter Type MMN400A010U1 VDS 100V ID 400A RDS(ON).max TJ=25℃ 1.4 mΩ TJmax 175℃ Marking MMN400A010U 1 Package NA ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VD SS VGSS Drain - Source Voltage Gate - Source Voltage TJ=25℃ ID Continuou s Drain Current IDM Pulsed Dr.


MacMic MMN400A010U1

ain Current at VGS=10V TC=25℃, TJmax= 175℃ TC=100℃, TJmax=175℃ Limited by TJmax PD Maximum Power Dissipation EAS Single Pulse Avalanche Energy T C=25℃, TJmax=175℃ VDD=50V,L=1mH Va lues Unit 100 V ±20 550 400 A 80 0 1071 W 3000 mJ THERMAL AND MODUL E CHARACTERISTICS (T C =25°C unless ot herwise specified) Symbol Parameter/T est Conditions RthJC Thermal re.


MacMic MMN400A010U1

sistance,junction to case Per MOSFET Va lues Unit 0.14 K/W TJmax TSTG Max. Junction Temperature Storage Temperatu re Range 175 ℃ -40~125 to heatsin k Torque to terminal Recommended(M5 Recommended(M5) 2.5~5 Nm 2.5 5 Weight 110 g MacMic Science & T echnology Co., Ltd. Add:#18, Hua Sha n Zhong Lu, New District, Changzhou Cit y, Jiangsu Province, P. R .of China .




Part

MMN400A010U1

Description

100V 400A N-ch Power MOSFET



Feature


August 2016 MMN400A010U1 100V 400A N-c h Power MOSFET Module Preliminary RoH S Compliant PRODUCT FEATURES □ RDS(O N).typ=1.1mΩ@VGS=10V □ 175℃operat ing temperature □ Low Gate Charge Min imize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected R esistance Inside □ Inside the module, each MOSFET chip has a gate resistance: 2.2Ω APPLICATIONS □ High efficiency.
Manufacture

MacMic

Datasheet
Download MMN400A010U1 Datasheet




 MMN400A010U1
August 2016
MMN400A010U1
100V 400A N-ch Power MOSFET Module
Preliminary
RoHS Compliant
PRODUCT FEATURES
RDS(ON).typ=1.1m@VGS=10V
175operating temperature
Low Gate Charge Minimize Switching Loss
Fast Recovery body Diode
20K Gate Protected Resistance Inside
Inside the module,each MOSFET chip has a gate resistance:2.2
APPLICATIONS
High efficiency DC/DC Converters
ISG EV Products
UPS inverter
Type
MMN400A010U1
VDS
100V
ID
400A
RDS(ON).max TJ=25
1.4m
TJmax
175
Marking
MMN400A010U1
Package
NA
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VDSS
VGSS
Drain - Source Voltage
Gate - Source Voltage
TJ=25
ID
Continuous Drain Current
IDM
Pulsed Drain Current at VGS=10V
TC=25, TJmax=175
TC=100, TJmax=175
Limited by TJmax
PD
Maximum Power Dissipation
EAS
Single Pulse Avalanche Energy
TC=25, TJmax=175
VDD=50V,L=1mH
Values
Unit
100
V
±20
550
400
A
800
1071
W
3000
mJ
THERMAL AND MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
RthJC Thermal resistance,junction to case Per MOSFET
Values
Unit
0.14
K/W
TJmax
TSTG
Max. Junction Temperature
Storage Temperature Range
175
-40125
to heatsink
Torque
to terminal
RecommendedM5
RecommendedM5
2.55
Nm
2.55
Weight
110
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMN400A010U1
MMN400A010U1
MOSFET
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
V(BR)DSS Drain Source Breakdown Voltage
VGS=0V, ID=1mA
RDS(ON) Drain Source ON Resistance
VGS=10V, ID=300A
IDSS
VGS(th)
Drain Source Leakage Current
Gate Threshold Voltage
VDS=100V,VGS=0V
VGS= VDS , ID=1mA
IGSS
Gate Leakage Current
VDS=0V,VGS=±20V
Rgint
Integrated Gate Resistor
Qg
Total Gate Charge
Qgs
Gate Source Charge
VDD=65V, ID=300A , VGS=10V
Qgd
Gate Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
VDS=25V, VGS=0V, f =1MHz
Crss
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
VDD=50V,ID=200A,
RG =5, VGS=10V,
Resistive Load
TJ=25
Min. Typ. Max. Unit
100
V
1.1
1.4 m
2
mA
2.0
4.0
V
-2
2
mA
1.2
660
nC
170
nC
225
nC
44
nF
3.05
nF
0.73
nF
122
ns
88
ns
540
ns
112
ns
Source-Drain BODY-DIODE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
Min. Typ.
ISD
Continuous Source Drain Current
ISDM
Pulse Source Drain Current
Limited by TJmax
VSD
Forward Voltage
IS=300A , VGS=0V
1.0
trr
Reverse Recovery time
IF=200A , VGS=0V
130
QRR
Reverse Recovery Charge
dIF/dt=-140A/μs
800
Max. Unit
400
A
800
A
1.2
V
ns
nC
2




 MMN400A010U1
MMN400A010U1
15
1600
Vgs=15V
12
25
125
1200
Vgs=10V
Vgs=8V
9
Vgs=6V
800
Vgs=5V
6
3
400
TJ=25
0
5
7
9
11
13
15
VGSV
Figure 1. Typical RDS(ON) vs Gate Voltage
2
Vgs=10V
1.75
Vgs=15V
1.5
1.25
1
0.75
0.5
0
400
800
1200
IDA
Figure 3. Drain-Source ON Resistance vs ID
2.4
2
VIDG=S3=0100AV
0
0
1
2
3
4
5
VDSV
Figure 2. Typical Output Characteristics
800
600
25
400
125
200
0
0.3
0.5
0.7
0.9
1.1
1.3
VSDV
Figure 4. Source-Drain Voltage
10
8
IVDD=S3=0605AV
1.6
6
1.2
4
0.8
2
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ()
Figure 5. Drain-Source ON Resistance vs Junction
3
Temperature
0
0
150 300 450 600 750
Qg(nc)
Figure 6. Gate Charge characteristics




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