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Power MOSFET. MMN600DB015B Datasheet

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Power MOSFET. MMN600DB015B Datasheet
















MMN600DB015B MOSFET. Datasheet pdf. Equivalent













Part

MMN600DB015B

Description

150V 600A N-ch Power MOSFET



Feature


April 2015 MMN600DB015B 150V 600A N-ch Power MOSFET Module Version 0 RoHS C ompliant PRODUCT FEATURES □ RDS(ON). typ=1.8mΩ@VGS=10V □ 175℃ junction temperature □ Low Gate Charge Minimi ze Switching Loss □ Fast Recovery bod y Diode □ 20K Ω Gate Protected Resi stance Inside APPLICATIONS □ High ef ficiency DC/DC Converters □ ISG EV Pr oducts □ UPS inverter Type MMN600DB01.
Manufacture

MacMic

Datasheet
Download MMN600DB015B Datasheet


MacMic MMN600DB015B

MMN600DB015B; 5B VDS 150V ID 600A RDS(ON).max TJ=25 °C 2.1mΩ TJmax 175℃ Marking MMN6 00DB015B Package NDB ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Condit ions VDSS VGSS Drain Source Voltage G ate Source Voltage TJ=25℃ ID Conti nuous Drain Current TC=25℃ TC=100℃ IDM Pulsed Drain Current at VGS=10V PD Maximum Power Dissipation Limited by TJmax T C =25°C unless o.


MacMic MMN600DB015B

therwise specified Values Unit 150 V ±20 850 600 A 1700 1500 W THERM AL AND MODULE CHARACTERISTICS Symbol Parameter/Test Conditions RthJC TJmax TSTG Thermal resistance,junction to ca se Per MOSFET Max. Junction Temperature Storage Temperature Range Torque to heatsink to terminal Recommended(M5 Recommended(M5) Weight T C =25 °C unless otherwise specifi.


MacMic MMN600DB015B

ed Values Unit 0.1 K/W 175 -40~1 25 ℃ 2.5~5 Nm 2.5~5 240 g MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New Distr ict, Changzhou City, Jiangsu Province, P. R .of China Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213 022 Website:www.macmicst.com 1 MMN6 00DB015B ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified .




Part

MMN600DB015B

Description

150V 600A N-ch Power MOSFET



Feature


April 2015 MMN600DB015B 150V 600A N-ch Power MOSFET Module Version 0 RoHS C ompliant PRODUCT FEATURES □ RDS(ON). typ=1.8mΩ@VGS=10V □ 175℃ junction temperature □ Low Gate Charge Minimi ze Switching Loss □ Fast Recovery bod y Diode □ 20K Ω Gate Protected Resi stance Inside APPLICATIONS □ High ef ficiency DC/DC Converters □ ISG EV Pr oducts □ UPS inverter Type MMN600DB01.
Manufacture

MacMic

Datasheet
Download MMN600DB015B Datasheet




 MMN600DB015B
April 2015
MMN600DB015B
150V 600A N-ch Power MOSFET Module
Version 0
RoHS Compliant
PRODUCT FEATURES
RDS(ON).typ=1.8m@VGS=10V
175junction temperature
Low Gate Charge Minimize Switching Loss
Fast Recovery body Diode
20K Gate Protected Resistance Inside
APPLICATIONS
High efficiency DC/DC Converters
ISG EV Products
UPS inverter
Type
MMN600DB015B
VDS
150V
ID
600A
RDS(ON).max TJ=25°C
2.1m
TJmax
175
Marking
MMN600DB015B
Package
NDB
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VDSS
VGSS
Drain Source Voltage
Gate Source Voltage
TJ=25
ID
Continuous Drain Current
TC=25
TC=100
IDM
Pulsed Drain Current at VGS=10V
PD
Maximum Power Dissipation
Limited by TJmax
T C =25°C unless otherwise specified
Values
Unit
150
V
±20
850
600
A
1700
1500
W
THERMAL AND MODULE CHARACTERISTICS
Symbol
Parameter/Test Conditions
RthJC
TJmax
TSTG
Thermal resistance,junction to case Per MOSFET
Max. Junction Temperature
Storage Temperature Range
Torque
to heatsink
to terminal
RecommendedM5
RecommendedM5
Weight
T C =25°C unless otherwise specified
Values
Unit
0.1
K/W
175
-40125
2.55
Nm
2.55
240
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




 MMN600DB015B
MMN600DB015B
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain Source Breakdown Voltage
VGS=0V, ID=600μA
150
V
RDS(ON) Drain Source ON Resistance
VGS=10V, ID=600A
1.8 2.1 m
IDSS
Drain Source Leakage Current
VDS=150V,VGS=0V
2 mA
VGS(th)
Gate Threshold Voltage
VGS= VDS , ID=1.6mA
3
4
5
V
IGSS
Gate Leakage Current
VDS=0V,VGS=±20V(module)
-2
2 mA
Qg
Total Gate Charge
850
nC
Qgs
Gate Source Charge
VDD=75V, ID=300A , VGS=10V
210
nC
Qgd
Gate Drain Charge
320
nC
gfs
Forward Transconductance
VDS=10V, ID=300A
496
S
Ciss
Input Capacitance
60
nF
Coss
Output Capacitance
VDS=25V, VGS=0V, f =1MHz
4.7
nF
Crss
Reverse Transfer Capacitance
0.95
nF
td(on)
Turn on Delay Time
230
ns
tr
td(off)
tf
Eon
Rise Time
Turn off Delay Time
Fall Time
Turn on Energy
VDD=75V,ID=300A,
RG=5,VGS=15V
(Inductive Load)
TJ=25
350
ns
600
ns
310
ns
TBD
mJ
Eoff
Turn off Energy
TBD
mJ
Source-Drain BODY-DIODE CHARACTERISTICS
Symbol
Parameter/Test Conditions
ISD
Continuous Source Drain Current
ISDM
Pulse Source Drain Current
VSD
Forward Voltage
trr
Reverse Recovery time
Qrr
Reverse Recovery Charge
Limited by TJmax
IS=300A , VGS=0V
IF=300A , VGS=0V
dIF/dt=-650A/μs
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
600 A
1200 A
1.0 1.2 V
150
ns
6500
nC
2




 MMN600DB015B
600
25
450
125
300
150
VGS=10V
0
0.0
0.5
1.0
1.5
2.0
VDS(V)
Figure 1. Typical Output Characteristics
MMN600DB015B
600
125
500
400
300
200
100
Vge=15V
Vge=10V
Vge=8V
Vge=6V
Vge=5V
0
0
1
2
3
4
5
VDS(V)
Figure 2. Typical Output Characteristics
6
Vgs=10V
5
4
3
2
1
0 100 200 300 400 500 600
ID(A)
Figure 3. Drain-Source ON Resistance vs ID
600
25
500
125
400
300
200
100
0
0.2 0.4 0.6 0.8 1.0 1.2
VSD(V)
Figure 4. Source-Drain Voltage
2.0
VGS=10V
1.8
ID=600A
1.6
1.4
1.2
1.0
25 50 75 100 125 150 175
TJ(℃)
Figure 5. Drain-Source ON Resistance vs Junction
Temperature
10
VDS=75V
8
ID=300A
6
4
2
0
0 200 400 600 800 1000
Qg(nc)
Figure 6. Gate Charge characteristics
3




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