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Power MOSFET. MMN1000DB010B Datasheet

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Power MOSFET. MMN1000DB010B Datasheet
















MMN1000DB010B MOSFET. Datasheet pdf. Equivalent













Part

MMN1000DB010B

Description

100V 1000A N-ch Power MOSFET



Feature


March 2016 PRODUCT FEATURES ƶ RDS(ON).t yp=0.57mȍ@VGS=10V ƶ 175ćoperating te mperature ƶ Low Gate Charge Minimize S witching Loss ƶ Fast Recovery body Dio de ƶ 10K ȍ Gate Protected Resistance Inside MMN1000DB010B 100V 1000A N-ch Power MOSFET Module Preliminary RoHS Compliant APPLICATIONS ƶ High efficie ncy DC/DC Converters ƶ Synchronous Rec tifier Type MMN1000DB010B .
Manufacture

MacMic

Datasheet
Download MMN1000DB010B Datasheet


MacMic MMN1000DB010B

MMN1000DB010B; VDS 100V ID 1000A RDS(ON).max TJ=25ć 0.75mȍ TJmax 175ć Marking MMN1000DB 010B Package NDB ABSOLUTE MAXIMUM RAT INGS(T C =25°C unless otherwise specif ied) Symbol Parameter/Test Conditions VDSS Drain - Source Voltage TJ=25ć VGSS Gate - Source Voltage ID Contin uous Drain Current TC=25ć TC=80ć ID M Pulsed Drain Current at VGS=10V Lim ited by TJmax PD Maximu.


MacMic MMN1000DB010B

m Power Dissipation EAS Single Pulse A valanche Energy VDD=50V,L=1mH Values Unit 100 V ±20 1250 1000 A 2000 1360 W 2500 mJ THERMAL AND MODULE CHARACTERISTICS (T C =25°C unless othe rwise specified) Symbol Parameter/Tes t Conditions RthJC Thermal resistance, junction to case Per MOSFET Values Un it 0.11 K/W TJmax TSTG Max. Junctio n Temperature Storag.


MacMic MMN1000DB010B

e Temperature Range 175 ć -40̚125 Vi sol Torque Isolation Breakdown Voltage to heatsink to terminal AC, 50Hz(R.M. S), t=1minute Recommended˄M5˅ Recomme nded˄M5˅ 3000 V 2.5̚5 Nm 2.5̚5 Weight 240 g MacMic Science & Techno logy Co., Ltd. Add˖#18, Hua Shan Zhon g Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China 1 Tel. +86-519-85163708 Fax˖+86-51.





Part

MMN1000DB010B

Description

100V 1000A N-ch Power MOSFET



Feature


March 2016 PRODUCT FEATURES ƶ RDS(ON).t yp=0.57mȍ@VGS=10V ƶ 175ćoperating te mperature ƶ Low Gate Charge Minimize S witching Loss ƶ Fast Recovery body Dio de ƶ 10K ȍ Gate Protected Resistance Inside MMN1000DB010B 100V 1000A N-ch Power MOSFET Module Preliminary RoHS Compliant APPLICATIONS ƶ High efficie ncy DC/DC Converters ƶ Synchronous Rec tifier Type MMN1000DB010B .
Manufacture

MacMic

Datasheet
Download MMN1000DB010B Datasheet




 MMN1000DB010B
March 2016
PRODUCT FEATURES
ƶ RDS(ON).typ=0.57mȍ@VGS=10V
ƶ 175ćoperating temperature
ƶ Low Gate Charge Minimize Switching Loss
ƶ Fast Recovery body Diode
ƶ 10K ȍ Gate Protected Resistance Inside
MMN1000DB010B
100V 1000A N-ch Power MOSFET Module
Preliminary
RoHS Compliant
APPLICATIONS
ƶ High efficiency DC/DC Converters
ƶ Synchronous Rectifier
Type
MMN1000DB010B
VDS
100V
ID
1000A
RDS(ON).max TJ=25ć
0.75mȍ
TJmax
175ć
Marking
MMN1000DB010B
Package
NDB
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VDSS Drain - Source Voltage
TJ=25ć
VGSS Gate - Source Voltage
ID
Continuous Drain Current
TC=25ć
TC=80ć
IDM
Pulsed Drain Current at VGS=10V
Limited by TJmax
PD
Maximum Power Dissipation
EAS
Single Pulse Avalanche Energy
VDD=50V,L=1mH
Values
Unit
100
V
±20
1250
1000
A
2000
1360
W
2500
mJ
THERMAL AND MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
RthJC Thermal resistance,junction to case Per MOSFET
Values
Unit
0.11
K/W
TJmax
TSTG
Max. Junction Temperature
Storage Temperature Range
175
ć
-40̚125
Visol
Torque
Isolation Breakdown Voltage
to heatsink
to terminal
AC, 50Hz(R.M.S), t=1minute
Recommended˄M5˅
Recommended˄M5˅
3000
V
2.5̚5
Nm
2.5̚5
Weight
240
g
MacMic Science & Technology Co., Ltd.
Add˖#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.˖+86-519-85163708 Fax˖+86-519-85162291 Post Code˖213022 Website ˖www.macmicst.com




 MMN1000DB010B
MMN1000DB010B
MOSFET
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
V(BR)DSS Drain Source Breakdown Voltage
VGS=0V, ID=1mA
RDS(ON) Drain Source ON Resistance
VGS=10V, ID=500A(chip)
VGS=10V, ID=500A(terminal)
IDSS
Drain Source Leakage Current
VDS=100V,VGS=0V
VGS(th) Gate Threshold Voltage
VGS= VDS , ID=2mA
IGSS
Gate Leakage Current
VDS=0V,VGS=±20V
Rgint
Integrated Gate Resistor
Qg
Total Gate Charge
Qgs
Gate Source Charge
VDD=65V, ID=600A , VGS=10V
Qgd
Gate Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
VDS=25V, VGS=0V, f =1MHz
Crss
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
VDD=60V,ID=200A,
RG =5ȍ, VGS=10V,
Resistive Load
TJ=25ć
Min. Typ. Max. Unit
100
V
0.57 0.75
mȍ
0.8
0.95
2
mA
2.0
4.0
V
-2
2
mA
1.6
ȍ
1320
nC
340
nC
450
nC
88
nF
6.1
nF
1.45
nF
15
ns
38
ns
364
ns
23
ns
Source-Drain BODY-DIODE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
Min.
ISD
Continuous Source Drain Current
ISDM
Pulse Source Drain Current
Limited by TJmax
VSD
Forward Voltage
trr
Reverse Recovery time
QRR
Reverse Recovery Charge
IS=500A , VGS=0V
IF=200A , VGS=0V
dIF/dt=-100A/ȝs
Typ.
1.0
220
4400
Max. Unit
1250 A
2000 A
1.2
V
ns
nC
2




 MMN1000DB010B
MMN1000DB010B
15
2000
Vgs=15V
12
25ć
1600
Vgs=10V
125ć
Vgs=8V
9
1200
Vgs=6V
Vgs=5V
6
800
3
0
5
7
9
11
13
15
VGS˄V˅
Figure 1. Typical RDS(ON) vs Gate Voltage
1
Vgs=10V
0.8
Vgs=15V
0.6
400
TJ=25ć
0
0
1
2
3
4
5
VDS˄V˅
Figure 2. Typical Output Characteristics
1600
1200
800
25ć
125ć
0.4
400
0.2
0
400
800
1200
1600
ID˄A˅
Figure 3. Drain-Source ON Resistance vs ID
2.4
VGS=10V
2
ID=500A
1.6
1.2
0.8
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ(ć)
Figure 5. Drain-Source ON Resistance vs Junction
3
Temperature
0
0.3 0.5 0.7 0.9 1.1 1.3
VSD˄V˅
Figure 4. Source-Drain Voltage
10
VDS=65V
8
ID=600A
6
4
2
0
0
300 600 900 1200 1500
Qg(nc)
Figure 6. Gate Charge characteristics




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