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N-Channel MOSFET. FQU2N60C Datasheet

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N-Channel MOSFET. FQU2N60C Datasheet
















FQU2N60C MOSFET. Datasheet pdf. Equivalent













Part

FQU2N60C

Description

N-Channel MOSFET



Feature


FQD2N60C / FQU2N60C — N-Channel QFET® MOSFET FQD2N60C / FQU2N60C N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω Fea tures • 1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V, ID = 0.95 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche T ested • RoHS Compliant Description T his N-Channel enhancement mode power MO SFET is produced using ON Semiconduc.
Manufacture

ON Semiconductor

Datasheet
Download FQU2N60C Datasheet


ON Semiconductor FQU2N60C

FQU2N60C; tor’s proprietary planar stripe and DM OS technology. This advanced MOSFET tec hnology has been especially tailored to reduce on-state resistance, and to pro vide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor cor rection (PFC), and electronic lamp ball asts. D D G S D-P.


ON Semiconductor FQU2N60C

AK GDS I-PAK G S Absolute Maximum R atings TC = 25°C unless otherwise note d. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain -Source Voltage Drain Current - Conti nuous (TC = 25°C) - Continuous (TC = 1 00°C) Drain Current - Pulsed Gate-S ource Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive A valanche Energy Peak.


ON Semiconductor FQU2N60C

Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes , 1/8" from case for 5 seconds (Note 1 ) (Note 2) (Note 1) (Note 1) (Note 3) FQD2N60CTM / FQU2N60CTU 600 1.9 1.14 7. 6 ± 30 120 1.9 4.4 4.5 2.5 44 0.35 -55 to +150 300 Unit V A.




Part

FQU2N60C

Description

N-Channel MOSFET



Feature


FQD2N60C / FQU2N60C — N-Channel QFET® MOSFET FQD2N60C / FQU2N60C N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω Fea tures • 1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V, ID = 0.95 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche T ested • RoHS Compliant Description T his N-Channel enhancement mode power MO SFET is produced using ON Semiconduc.
Manufacture

ON Semiconductor

Datasheet
Download FQU2N60C Datasheet




 FQU2N60C
FQD2N60C / FQU2N60C
N-Channel QFET® MOSFET
600 V, 1.9 A, 4.7 Ω
Features
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V,
ID = 0.95 A
• Low Gate Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
D
D
G
S
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)*
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQD2N60CTM / FQU2N60CTU
600
1.9
1.14
7.6
± 30
120
1.9
4.4
4.5
2.5
44
0.35
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction-to-Ambient (* 1 in2 pad of 2 oz copper), Max.
©2003 Semiconductor Components Industries, LLC.
October-2017,Rev.2
FQD2N60CTM /
FQU2N60CTU
2.87
110
50
Unit
°C/W
Publication Order Number:
FQU2N60C/D




 FQU2N60C
Package Marking and Ordering Information
Device Marking
FQD2N60C
FQU2N60C
Device
FQD2N60CTM
FQU2N60CTU
Package
D-PAK
I-PAK
Reel Size
330 mm
Tube
Tape Width
16 mm
N/A
Quantity
2500 units
70 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
ΔBVDSS Breakdown Voltage Temperature
/ ΔTJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
V
--
0.6
--
V/°C
--
--
1
μA
--
--
10
μA
--
--
100
nA
--
--
-100
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 0.95 A
VDS = 40 V, ID = 0.95 A
2.0
--
4.0
V
--
3.6
4.7
Ω
--
5.0
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
180
235
pF
--
20
25
pF
--
4.3
5.6
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 2 A,
RG = 25 Ω
VDS = 480 V, ID = 2 A,
VGS = 10 V
--
9
28
ns
--
25
60
ns
--
24
58
ns
(Note 4)
--
28
66
ns
--
8.5
12
nC
--
1.3
--
nC
(Note 4)
--
4.1
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.9 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2 A,
dIF / dt = 100 A/μs
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 56 mH, IAS = 2 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 2 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
1.9
A
--
--
7.6
A
--
--
1.4
V
--
230
--
ns
--
1.0
--
μC
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2




 FQU2N60C
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
15V.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-2
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
12
10
8
VGS = 10V
6
4
VGS = 20V
2
Note : TJ = 25
0
0
1
2
3
4
5
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
500
450
400
350
300
250
200
150
100
50
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
101
150oC
100
25oC
-55oC
10-1
2
Notes :
1. VDS = 40V
2. 250μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
100
150
25
Notes :
1. VGS = 0V
2. 250μs Pulse Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
Note : ID = 2A
0
0
2
4
6
8
10
QG, Total Gate Charge [nC]
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