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N-Channel MOSFET. FDP52N20 Datasheet

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N-Channel MOSFET. FDP52N20 Datasheet
















FDP52N20 MOSFET. Datasheet pdf. Equivalent













Part

FDP52N20

Description

N-Channel MOSFET



Feature


FDP52N20 N‐Channel UniFET MOSFET 200 V, 52 A, 49 mW Description UniFET MOSFE T is ON Semiconductor’s high voltage MOSFET family based on planar stripe an d DMOS technology. This MOSFET is tailo red to reduce on−state resistance, an d to provide better switching performan ce and higher avalanche energy strength . This device family is suitable for sw itching power converter .
Manufacture

ON Semiconductor

Datasheet
Download FDP52N20 Datasheet


ON Semiconductor FDP52N20

FDP52N20; applications such as power factor correc tion (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballast s. Features • RDS(on) = 41 mW (Typ.) @ VGS = 10 V, ID = 26 A • Low Gate Ch arge (Typ. 49 nC) • Low CRSS (Typ. 66 pF) • 100% Avalanche Tested • Thes e Devices are Pb−Free and are RoHS Co mpliant Applications • PDP TV • Lig hting • Uninterruptible Power Supp.


ON Semiconductor FDP52N20

ly • AC−DC Power Supply www.onsemi. com GDS TO−220 CASE 340AT D G S ORDERING INFORMATION See detailed order ing and shipping information on page 2 of this data sheet. © Semiconductor C omponents Industries, LLC, 2017 1 Mar ch, 2018 − Rev. 3 Publication Order Number: FDP52N20/D FDP52N20 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless oth erwise specified) Symbol P.


ON Semiconductor FDP52N20

arameter Value Unit VDSS VGSS ID IDM Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current 2 00 V ±30 V Continuous (TC = 25°C) 52 A Continuous (TC = 100°C) 33 Pulsed (Note 1) 208 A EAS IAR EAR dv /dt Single Pulsed Avalanche Energy (No te 2) Avalanche Current (Note 1) Repeti tive Avalanche Energy (Note 1) Peak Dio de Recovery dv/dt (No.




Part

FDP52N20

Description

N-Channel MOSFET



Feature


FDP52N20 N‐Channel UniFET MOSFET 200 V, 52 A, 49 mW Description UniFET MOSFE T is ON Semiconductor’s high voltage MOSFET family based on planar stripe an d DMOS technology. This MOSFET is tailo red to reduce on−state resistance, an d to provide better switching performan ce and higher avalanche energy strength . This device family is suitable for sw itching power converter .
Manufacture

ON Semiconductor

Datasheet
Download FDP52N20 Datasheet




 FDP52N20
FDP52N20
N‐Channel UniFET MOSFET
200 V, 52 A, 49 mW
Description
UniFET MOSFET is ON Semiconductor’s high voltage MOSFET
family based on planar stripe and DMOS technology. This MOSFET
is tailored to reduce onstate resistance, and to provide better
switching performance and higher avalanche energy strength. This
device family is suitable for switching power converter applications
such as power factor correction (PFC), flat panel display (FPD) TV
power, ATX and electronic lamp ballasts.
Features
RDS(on) = 41 mW (Typ.) @ VGS = 10 V, ID = 26 A
Low Gate Charge (Typ. 49 nC)
Low CRSS (Typ. 66 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
PDP TV
Lighting
Uninterruptible Power Supply
ACDC Power Supply
www.onsemi.com
GDS
TO220
CASE 340AT
D
G
S
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
March, 2018 Rev. 3
Publication Order Number:
FDP52N20/D




 FDP52N20
FDP52N20
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
Value
Unit
VDSS
VGSS
ID
IDM
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
200
V
±30
V
Continuous (TC = 25°C)
52
A
Continuous (TC = 100°C)
33
Pulsed (Note 1)
208
A
EAS
IAR
EAR
dv/dt
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
2520
52
35.7
4.5
mJ
A
mJ
V/ns
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
357
W
2.86
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 s
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.4 mH, IAS = 52 A, VDD = 50 V, RG = 25 W, starting TJ = 25°C.
3. ISD 52 A, di/dt 200 A/ms, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
0.35
62.5
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
FDP52N20
FDP52N20
TO220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 Units
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 FDP52N20
FDP52N20
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
OFF CHARACTERISTICS
BVDSS
DBVDSS/DTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 mA, TJ = 25_C
ID = 250 mA, Referenced to 25_C
200
0.2
V
V/_C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ON CHARACTERISTICS
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125_C
VGS = ±30 V, VDS = 0 V
1
mA
10
±100
nA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 26 A
VDS = 40 V, ID = 26 A
3.0
5.0
V
0.041 0.049
W
35
S
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10 V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
SWITCHING CHARACTERISTICS
VDS = 25 V, VGS = 0 V, f = 1 MHz
VDS = 160 V, ID = 52 A, VGS = 10 V
(Note 5)
2230 2900
pF
540
700
pF
66
100
pF
49
63
nC
19
nC
24
nC
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
DRAINSOURCE DIODE CHARACTERISTICS
VDD = 100 V, ID = 20 A,
RG = 25 W (Note 5)
53
115
ns
175
359
ns
48
107
ns
29
68
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward
Voltage
VGS = 0 V, ISD = 52 A
52
A
204
A
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 52 A,
dIF/dt = 100 A/ms
162
ns
1.3
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
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