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Emitting Diode. VSLY3943 Datasheet

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Emitting Diode. VSLY3943 Datasheet
















VSLY3943 Diode. Datasheet pdf. Equivalent













Part

VSLY3943

Description

High Speed Infrared Emitting Diode



Feature


www.vishay.com VSLY3943 Vishay Semicond uctors High Speed Infrared Emitting Di ode, 940 nm, Surface Emitter Technology 94 8636 DESCRIPTION As part of the Su rfLightTM portfolio, the VSLY3943 is a high speed infrared emitting diode base d on surface emitter technology, molded in a blue-gray plastic package. FEATU RES • Package type: leaded • Packag e form: T-1, clear epo.
Manufacture

Vishay

Datasheet
Download VSLY3943 Datasheet


Vishay VSLY3943

VSLY3943; xy • Dimensions: Ø 3 mm • Peak wave length: λp = 940 nm • High speed • High radiant power • High radiant in tensity • Angle of half intensity: ϕ = ± 17° • Low forward voltage • Good spectral matching to Si photodetec tors • Material categorization: for d efinitions of compliance please see www .vishay.com/doc?99912 APPLICATIONS • Infrared remote control units • Free air tr.


Vishay VSLY3943

ansmission systems • Infrared source f or optical counters and card readers P RODUCT SUMMARY COMPONENT VSLY3943 Ie ( mW/sr) 70 Note • Test conditions see table “Basic Characteristics” ϕ (deg) ± 17 λp (nm) 940 tr (ns) 5 O RDERING INFORMATION ORDERING CODE VSLY3 943 VSLY3943-MSZ Note • MOQ: minimum order quantity PACKAGING Bulk Ammopack REMARKS MOQ: 5000 pcs, 5000 p.


Vishay VSLY3943

cs/bulk MOQ: 10 000 pcs, 2000 pcs/box P ACKAGE FORM T-1 T-1 ABSOLUTE MAXIMUM R ATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Reverse voltage Forward curren t Peak forward current Surge forward cu rrent Power dissipation Junction temper ature Operating temperature range Stora ge temperature range Soldering temperat ure Thermal resista.




Part

VSLY3943

Description

High Speed Infrared Emitting Diode



Feature


www.vishay.com VSLY3943 Vishay Semicond uctors High Speed Infrared Emitting Di ode, 940 nm, Surface Emitter Technology 94 8636 DESCRIPTION As part of the Su rfLightTM portfolio, the VSLY3943 is a high speed infrared emitting diode base d on surface emitter technology, molded in a blue-gray plastic package. FEATU RES • Package type: leaded • Packag e form: T-1, clear epo.
Manufacture

Vishay

Datasheet
Download VSLY3943 Datasheet




 VSLY3943
www.vishay.com
VSLY3943
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm,
Surface Emitter Technology
94 8636
DESCRIPTION
As part of the SurfLightTM portfolio, the VSLY3943 is a high
speed infrared emitting diode based on surface emitter
technology, molded in a blue-gray plastic package.
FEATURES
• Package type: leaded
• Package form: T-1, clear epoxy
• Dimensions: Ø 3 mm
• Peak wavelength: λp = 940 nm
• High speed
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 17°
• Low forward voltage
• Good spectral matching to Si photodetectors
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared remote control units
• Free air transmission systems
• Infrared source for optical counters and card readers
PRODUCT SUMMARY
COMPONENT
VSLY3943
Ie (mW/sr)
70
Note
• Test conditions see table “Basic Characteristics”
ϕ (deg)
± 17
λp (nm)
940
tr (ns)
5
ORDERING INFORMATION
ORDERING CODE
VSLY3943
VSLY3943-MSZ
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
Ammopack
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 10 000 pcs, 2000 pcs/box
PACKAGE FORM
T-1
T-1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction-to-ambient
tp/T = 0.1, tp = 100 μs
tp = 100 μs
t 5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
5
70
140
500
160
100
-40 to +85
-40 to +100
260
300
UNIT
V
mA
mA
mA
mW
°C
°C
°C
°C
K/W
Rev. 1.2, 10-Apr-18
1
Document Number: 84581
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VSLY3943
www.vishay.com
VSLY3943
Vishay Semiconductors
120
100
80
60
40 RthJA = 300 K/W
20
0
0
20
40
60
80 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
80
70
60
50
40
30
RthJA = 300 K/W
20
10
0
0
20
40
60
80 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
Forward voltage
Temperature coefficient of VF
IF = 70 mA, tp = 20 ms
VF
-
1.5
1.7
IF = 500 mA, tp = 100 μs
VF
-
2.6
-
IF = 50 mA
TKVF
-
-0.7
-
Reverse current
Junction capacitance
VR = 5 V
VR = 0 V, f = 1 MHz,
E = 0 mW/cm2
IR
Not designed for reverse operation
CJ
-
30
-
Radiant intensity
Radiant power
Temperature coefficient
of radiant power
IF = 70 mA, tp = 20 ms
IF = 500 mA, tp = 100 μs
IF = 70 mA, tp = 20 ms
IF = 50 mA
Ie
32
70
120
Ie
-
650
-
φe
-
40
-
TKϕe
-
-0.2
-
Angle of half intensity
ϕ
-
± 17
-
Peak wavelength
Spectral bandwidth
IF = 50 mA
IF = 70 mA
λp
-
940
-
Δλ
-
55
-
Temperature coefficient of lp
Rise time
Fall time
IF = 70 mA
TKλp
-
0.28
-
IF = 70 mA, 10 % to 90 %
tr
-
5
-
IF = 70 mA, 10 % to 90 %
tf
-
6
-
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm
ns
ns
Rev. 1.2, 10-Apr-18
2
Document Number: 84581
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VSLY3943
www.vishay.com
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
VSLY3943
Vishay Semiconductors
1000
tp = 100 μs
100
10
1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
115
IF = 50 mA
110
tp = 20 ms
105
100
95
90
85
-60 -40 -20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
110
IF = 50 mA
tp = 20 ms
105
100
95
90
-60 -40 -20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
100
IF = 70 mA
80
60
40
20
0
800
850 900 950 1000
λ - Wavelength (nm)
1050
Fig. 7 - Relative Radiant Intensity vs. Wavelength
10
tp = 100 μs
1
0.1
10
100
IF - Forward Current (mA)
Fig. 5 - Relative Radiant Intensity vs. Forward Current
0° 10° 20°
30°
40°
1.0
50°
0.9
0.8
60°
70°
80°
0.7
0.6 0.4 0.2 0
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Rev. 1.2, 10-Apr-18
3
Document Number: 84581
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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