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P-Channel MOSFET. Si7447ADP Datasheet

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P-Channel MOSFET. Si7447ADP Datasheet
















Si7447ADP MOSFET. Datasheet pdf. Equivalent













Part

Si7447ADP

Description

P-Channel MOSFET



Feature


P-Channel 30-V (D-S) MOSFET Si7447ADP V ishay Siliconix PRODUCT SUMMARY VDS ( V) - 30 RDS(on) (Ω) 0.0065 at VGS = - 10 V PowerPAK SO-8 ID (A)a - 35 Qg (Typ.) 100 nC 6.15 mm D 8 D 7 D 6 D 5 S 1 S 5.15 mm 2 S 3 G 4 Bo ttom View Ordering Information: Si7447A DP-T1-E3 (Lead (Pb)-free) Si7447ADP-T1- GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-.
Manufacture

Vishay

Datasheet
Download Si7447ADP Datasheet


Vishay Si7447ADP

Si7447ADP; free According to IEC 61249-2-21 Availab le • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Pack age with Low 1.07 mm Profile • 100 % Rg Tested APPLICATIONS S • Battery and Load Switching - Notebook Computer s - Notebook Battery Packs G D P-Chann el MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Param eter Symbol Limit Unit Dr.


Vishay Si7447ADP

ain-Source Voltage Gate-Source Voltage VDS - 30 V VGS ± 25 TC = 25 °C - 35 Continuous Drain Current (TJ = 15 0 °C) TC = 70 °C TA = 25 °C ID - 28 - 21.5b, c Pulsed Drain Current TA = 70 °C IDM - 17b, c - 60 A Contin uous Source-Drain Diode Current TC = 2 5 °C TA = 25 °C IS - 28 - 4.3b, c Single Pulse Avalanche Current Avalanch e Energy L = 0.1 mH IAS .


Vishay Si7447ADP

EAS 40 80 mJ TC = 25 °C 83.3 Maxim um Power Dissipation TC = 70 °C TA = 25 °C PD 53.3 5.4b, c W TA = 70 ° C 3.4b, c Operating Junction and Stor age Temperature Range Soldering Recomme ndations (Peak Temperature)d, e TJ, Ts tg - 55 to 150 °C 260 THERMAL RESI STANCE RATINGS Parameter Symbol Typi cal Maximum Unit Maximum Junction-to -Ambientb, f Maximum Ju.





Part

Si7447ADP

Description

P-Channel MOSFET



Feature


P-Channel 30-V (D-S) MOSFET Si7447ADP V ishay Siliconix PRODUCT SUMMARY VDS ( V) - 30 RDS(on) (Ω) 0.0065 at VGS = - 10 V PowerPAK SO-8 ID (A)a - 35 Qg (Typ.) 100 nC 6.15 mm D 8 D 7 D 6 D 5 S 1 S 5.15 mm 2 S 3 G 4 Bo ttom View Ordering Information: Si7447A DP-T1-E3 (Lead (Pb)-free) Si7447ADP-T1- GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-.
Manufacture

Vishay

Datasheet
Download Si7447ADP Datasheet




 Si7447ADP
P-Channel 30-V (D-S) MOSFET
Si7447ADP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) (Ω)
0.0065 at VGS = - 10 V
PowerPAK SO-8
ID (A)a
- 35
Qg (Typ.)
100 nC
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7447ADP-T1-E3 (Lead (Pb)-free)
Si7447ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• 100 % Rg Tested
APPLICATIONS
S
• Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 30
V
VGS
± 25
TC = 25 °C
- 35
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
- 28
- 21.5b, c
Pulsed Drain Current
TA = 70 °C
IDM
- 17b, c
- 60
A
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
- 28
- 4.3b, c
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
40
80
mJ
TC = 25 °C
83.3
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
53.3
5.4b, c
W
TA = 70 °C
3.4b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
RthJA
18
Steady State
RthJC
1.0
23
°C/W
1.3
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 73358
S09-0273-Rev. C, 16-Feb-09
www.vishay.com
1




 Si7447ADP
Si7447ADP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 25 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 24 A
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 24 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = - 15 V, VGS = - 10 V, ID = - 24 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 15 V, RL = 1.5 Ω
ID - 10 A, VGEN = - 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
IS = - 4.3 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 19 A, dI/dt = - 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 30
-1
- 30
1.7
Typ.
Max.
Unit
- 33
5.3
- 2.0
0.0054
50
-3
± 100
-1
- 10
0.0065
V
mV/°C
V
nA
µA
A
Ω
S
4650
1200
pF
930
100
150
15.5
nC
25
3.5
5.3
Ω
20
30
25
40
ns
82
125
98
150
- 28
A
- 60
- 0.72
- 1.1
V
47
70
ns
50
75
nC
22
ns
25
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73358
S09-0273-Rev. C, 16-Feb-09




 Si7447ADP
Si7447ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
1.2
VGS = 10 V thru 5 V
50
1.0
40
4V
30
20
10
0
0.0
0.4
0.8
1.2
1.6
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.018
0.016
0.014
0.012
VGS = 4.5 V
0.010
0.008
0.006
VGS = 10 V
0.004
0
10
20
30
40
50
60
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 24 A
8
VDS = 10 V
6
VDS = 15 V
4
VDS = 20 V
2
0.8
0.6
TC = 125 °C
0.4
25 °C
0.2
- 55 °C
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
6500
5200
Ciss
3900
2600
1300
Crss
Coss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
1.4
VGS = 10 V
1.2
VGS = 4.5 V
1.0
0.8
0
0
21
42
63
84
105
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73358
S09-0273-Rev. C, 16-Feb-09
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3




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