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POWER-DISTRIBUTION SWITCHES. TPS2551-Q1 Datasheet

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POWER-DISTRIBUTION SWITCHES. TPS2551-Q1 Datasheet






TPS2551-Q1 SWITCHES. Datasheet pdf. Equivalent




TPS2551-Q1 SWITCHES. Datasheet pdf. Equivalent





Part

TPS2551-Q1

Description

ADJUSTABLE CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES



Feature


TPS2551-Q1 www.ti.com ................. ....................................... ....................................... ....................................... ....................................... ......................... SLVS850 – J UNE 2008 ADJUSTABLE CURRENT-LIMITED POW ER-DISTRIBUTION SWITCH FEATURES 1 • Qualified for Automotive Applications Adjustable Current-Li.
Manufacture

Texas Instruments

Datasheet
Download TPS2551-Q1 Datasheet


Texas Instruments TPS2551-Q1

TPS2551-Q1; mit: 100 mA to 1100 mA • Fast Overcurr ent Response: 2 µs (Typ) • 85-mΩ H igh-Side MOSFET • Reverse Input-Outpu t Voltage Protection • Operating Rang e: 2.5 V to 6.5 V • Deglitched Fault Report • 1-µA Maximum Standby Supply Current • Junction Temperature Range : –40°C to 125°C • Built-in Soft- Start • 15-kV ESD Protection (With Ex ternal Capacitance) APPLICATIONS • USB Ports.


Texas Instruments TPS2551-Q1

/Hubs • Cell Phones • Laptops • He avy Capacitive Loads • Reverse-Voltag e Protection DESCRIPTION The TPS2551 p ower-distribution switch is intended fo r applications in which heavy capacitiv e loads and short circuits are likely t o be encountered, incorporating a 100-m Ω, N-channel MOSFET in a single packa ge. The current-limit threshold is user adjustable between 100 mA a.


Texas Instruments TPS2551-Q1

nd 1.1 A via an external resistor. The p ower-switch rise and fall times are con trolled to minimize current surges duri ng switching. The device limits the out put current to a desired level by switc hing into a constant-current mode when the output load exceeds the current-lim it threshold or a short is present. An internal reverse-voltage detection comp arator disables th.

Part

TPS2551-Q1

Description

ADJUSTABLE CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES



Feature


TPS2551-Q1 www.ti.com ................. ....................................... ....................................... ....................................... ....................................... ......................... SLVS850 – J UNE 2008 ADJUSTABLE CURRENT-LIMITED POW ER-DISTRIBUTION SWITCH FEATURES 1 • Qualified for Automotive Applications Adjustable Current-Li.
Manufacture

Texas Instruments

Datasheet
Download TPS2551-Q1 Datasheet




 TPS2551-Q1
TPS2551-Q1
www.ti.com ...................................................................................................................................................................................................... SLVS850 – JUNE 2008
ADJUSTABLE CURRENT-LIMITED POWER-DISTRIBUTION SWITCH
FEATURES
1
Qualified for Automotive Applications
Adjustable Current-Limit: 100 mA to 1100 mA
Fast Overcurrent Response: 2 µs (Typ)
85-mHigh-Side MOSFET
Reverse Input-Output Voltage Protection
Operating Range: 2.5 V to 6.5 V
Deglitched Fault Report
1-µA Maximum Standby Supply Current
Junction Temperature Range: –40°C to 125°C
Built-in Soft-Start
15-kV ESD Protection (With External
Capacitance)
APPLICATIONS
USB Ports/Hubs
Cell Phones
Laptops
Heavy Capacitive Loads
Reverse-Voltage Protection
DESCRIPTION
The TPS2551 power-distribution switch is intended
for applications in which heavy capacitive loads and
short circuits are likely to be encountered,
incorporating a 100-m, N-channel MOSFET in a
single package. The current-limit threshold is user
adjustable between 100 mA and 1.1 A via an
external resistor. The power-switch rise and fall times
are controlled to minimize current surges during
switching.
The device limits the output current to a desired level
by switching into a constant-current mode when the
output load exceeds the current-limit threshold or a
short is present. An internal reverse-voltage detection
comparator disables the power-switch in the event
that the output voltage is driven higher than the input
to protect devices on the input side of the switch. The
FAULT logic output asserts low during both
overcurrent and reverse-voltage conditions.
DBV PACKAGE
(TOP VIEW)
5-V USB Input
RFAULT
100 kW
0.1 µF
IN
OUT
USB Data
120 µF *
USB
Port
IN 1 6 OUT
GND 2 5 ILIM
EN 3 4 FAULT
FAULT Signal
Control Signal
FAULT
ILIM
EN
GND
GND
RILIM
15 kW
* USB requirement that downstream-facing ports are bypassed with at least 120 µF per hub
Figure 1. Typical Application as USB Power Switch
33 mW, Single
80 mW, Single
GENERAL SWITCH CATALOG
80 mW, Dual
80 mW, Dual
80 mW, Triple
80 mW, Quad
80 mW, Quad
TPS201xA 0.2 A to 2 A
TPS202x 0.2 A to 2 A
TPS203x 0.2 A to 2 A
TPS2014
TPS2015
TPS2041B
TPS2051B
TPS2045A
TPS2049
TPS2055A
TPS2061
TPS2065
TPS2068
TPS2069
600 mA
1A
500 mA
500 mA
250 mA
100 mA
250 mA
1A
1A
1.5 A
1.5 A
TPS2042B
TPS2052B
TPS2046B
TPS2056
TPS2062
TPS2066
TPS2060
TPS2064
500 mA
500 mA
250 mA
250 mA
1A
1A
1.5 A
1.5 A
TPS2080
TPS2081
TPS2082
TPS2090
TPS2091
TPS2092
500 mA
500 mA
500 mA
250 mA
250 mA
250 mA
TPS2043B
TPS2053B
TPS2047B
TPS2057A
TPS2063
TPS2067
500 mA
500 mA
250 mA
250 mA
1A
1A
TPS2044B
TPS2054B
TPS2048A
TPS2058
500 mA
500 mA
250 mA
250 mA
TPS2085
TPS2086
TPS2087
TPS2095
TPS2096
TPS2097
500 mA
500 mA
500 mA
250 mA
250 mA
250 mA
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008, Texas Instruments Incorporated




 TPS2551-Q1
TPS2551-Q1
SLVS850 – JUNE 2008 ...................................................................................................................................................................................................... www.ti.com
This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields.
These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to
MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than
maximum-rated voltages to these high-impedance circuits. During storage or handling the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to an appropriate logic
voltage level, preferably either VCC or ground. Specific guidelines for handling devices of this type are contained in the publication
Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
TJ
–40°C to 125°C
ORDERING INFORMATION(1)
PACKAGE (2)
ORDERABLE PART NUMBER
SOT-23 – DBV
Reel of 3000
TPS2551QDBVRQ1
TOP-SIDE MARKING
PIUQ
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range unless otherwise noted (2)
IOUT
TJ
TSgt
ESD
Voltage range on IN, OUT, EN, ILIM, FAULT
Voltage range from IN to OUT
Continuous output current
Continuous total power dissipation
FAULT sink current
ILIM source current
Operating junction temperature range
Storage temperature range
Lead temperature 1,6 mm (1/16-inch) from case for 10 seconds
Electrostatic discharge rating
Human-Body Model (HBM)
Charged-Device Model (CDM)
–0.3 V to 7 V
–7 V to 7 V
Internally limited
See Dissipation Ratings Table
25 mA
1 mA
–40°C to 150°C
–65°C to 150°C
300°C
2000 V
1500 V
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltages are referenced to GND unless otherwise noted.
DISSIPATION RATINGS
BOARD PACKAGE
Low-K (1)
High-K (2)
DBV
DBV
THERMAL
RESISTANCE
θJA
350°C/W
160°C/W
THERMAL
RESISTANCE
θJC
55°C/W
55°C/W
TA 25°C
POWER
RATING
285 mW
625 mW
DERATING
FACTOR ABOVE
TA = 25°C
2.85 mW/°C
6.25 mW/°C
TA = 70°C
POWER
RATING
155 mW
340 mW
TA = 85°C
POWER
RATING
114 mW
250 mW
(1) The JEDEC low-K (1s) board used to derive this data was a 3-in × 3-in, two-layer board with 2-oz copper traces on top of the board.
(2) The JEDEC high-K (2s2p) board used to derive this data was a 3-in × 3-in, multilayer board with 1-oz internal power and ground planes
and 2-oz copper traces on top and bottom of the board.
2
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Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS2551-Q1




 TPS2551-Q1
TPS2551-Q1
www.ti.com ...................................................................................................................................................................................................... SLVS850 – JUNE 2008
RECOMMENDED OPERATING CONDITIONS
VIN
VEN
IOUT
RILIM
IFAULT
TJ
Input voltage, IN
Enable voltage
Continuous output current, OUT
Current-limit set resistor from ILIM to GND
FAULT sink current
Operating junction temperature
MIN
MAX UNIT
2.5
6.5 V
0
6.5 V
0
1.1 A
14.3
80.6 k
0
10 mA
–40
125 °C
ELECTRICAL CHARACTERISTICS
over recommended operating junction temperature range, 2.5 V VIN 6.5 V, RILIM = 14.3 k, VEN = 5.0 V (unless otherwise
noted)
PARAMETER
TEST CONDITIONS(1)
MIN TYP MAX UNIT
POWER SWITCH
rDS(on)
Static drain-source on-state
resistance
tr
Rise time, output
tf
Fall time, output
ENABLE INPUT EN OR EN
TJ = 25 °C
–40 °C TJ 125 °C
VIN = 6.5 V
VIN = 2.5 V
VIN = 6.5 V
VIN = 2.5 V
CL = 1 µF, RL = 100 ,
(see Figure 2)
CL = 1 µF, RL = 100 ,
(see Figure 2)
85
1.0
0.65
0.2
0.2
95
m
135
1.5
1.0
ms
0.5
0.5
VIH
High-level input voltage
VIL
Low-level input voltage
IEN
Input current
ton
Turnon time
toff
Turnoff time
CURRENT LIMIT
VEN = 0 V or 6.5 V
CL = 1 µF, RL = 100 , (see Figure 2)
1.1
V
0.66
–0.5
0.5 µA
3.6 ms
3 ms
IOS
Short-circuit current, OUT
connected to GND
Current-limit threshold (maximum
IOC
dc output current IOUT delivered to
load)
tIOS
Response time to short circuit
REVERSE-VOLTAGE PROTECTION
RILIM = 80.6 k
RILIM = 38.3 k
RILIM = 15 k
RILIM = 80.6 k
RILIM = 38.3 k
RILIM = 15 k
VIN = 5.0 V (see Figure 3)
110
300
1050
290
620
1550
215
500
1400
315
665
1650
2
300
650
1650
mA
420
750
1750
µs
Reverse-voltage comparator trip
point
(VOUT – VIN)
Time from reverse-voltage
condition to MOSFET turn off
VIN = 5.0 V
95
135
190 mV
3
5
7 ms
SUPPLY CURRENT
IIN_off Supply current, low-level output
IIN_on
IREV
Supply current, high-level output
Reverse leakage current
VIN = 6.5 V, No load on OUT, VEN = 0 V, 14.3 kΩ ≤
RILIM 80.6 k
VIN = 6.5 V, No load on
OUT, VEN = 6.5 V
RILIM = 15 k
RILIM = 80.6 k
VOUT = 6.5 V, VIN = 0 V, TJ = 25 °C
0.1
1 µA
150 µA
130 µA
0.01
1 µA
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
separately.
Copyright © 2008, Texas Instruments Incorporated
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3
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