DatasheetsPDF.com

IGBT. FGH60N60 Datasheet

DatasheetsPDF.com

IGBT. FGH60N60 Datasheet
















FGH60N60 IGBT. Datasheet pdf. Equivalent













Part

FGH60N60

Description

IGBT



Feature


IGBT - Field Stop 600 V, 60 A FGH60N60SM D Description Using novel field stop IG BT technology, ON Semiconductor’s new series of field stop 2nd generation IG BTs offer the optimum performance for s olar inverter, UPS, welder, telecom, ES S and PFC applications where low conduc tion and switching losses are essential . Features • Maximum Junction Tempera ture: TJ = 175°C • Pos.
Manufacture

ON Semiconductor

Datasheet
Download FGH60N60 Datasheet


ON Semiconductor FGH60N60

FGH60N60; itive Temperature Co−efficient for eas y Parallel Operating • High Current C apability • Low Saturation Voltage: V CE(sat) = 1.9 V (Typ.) @ IC = 60 A • High Input Impedance • Fast Switching : EOFF = 7.5 uJ/A • Tightened Paramet er Distribution • This Device is Pb Free and is RoHS Compliant Application s • Solar Inverter, UPS, Welder, PFC, Telecom, ESS www.onsemi.com VCES .


ON Semiconductor FGH60N60

600 V IC 60 A C G E E C G COLLECTOR ( FLANGE) TO−247−3LD CASE 340CK MARKI NG DIAGRAM $Y&Z&3&K FGH60N60 SMD © Se miconductor Components Industries, LLC, 2010 January, 2020 − Rev. 3 $Y &Z & 3 &K FGH60N60SMD = ON Semiconductor Lo go = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ord ering and shipping inform.


ON Semiconductor FGH60N60

ation on page 2 of this data sheet. 1 Publication Order Number: FGH60N60SMD/ D FGH60N60SMD ABSOLUTE MAXIMUM RATING S Symbol Description Ratings Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage 600 V ±20 V 30 V IC Collector Current TC = 25 C 120 A TC = 100°C 60 A ICM (No te 1) Pulsed Collector.





Part

FGH60N60

Description

IGBT



Feature


IGBT - Field Stop 600 V, 60 A FGH60N60SM D Description Using novel field stop IG BT technology, ON Semiconductor’s new series of field stop 2nd generation IG BTs offer the optimum performance for s olar inverter, UPS, welder, telecom, ES S and PFC applications where low conduc tion and switching losses are essential . Features • Maximum Junction Tempera ture: TJ = 175°C • Pos.
Manufacture

ON Semiconductor

Datasheet
Download FGH60N60 Datasheet




 FGH60N60
IGBT - Field Stop
600 V, 60 A
FGH60N60SMD
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 2nd generation IGBTs offer the optimum
performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
Features
Maximum Junction Temperature: TJ = 175°C
Positive Temperature Coefficient for easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
High Input Impedance
Fast Switching: EOFF = 7.5 uJ/A
Tightened Parameter Distribution
This Device is PbFree and is RoHS Compliant
Applications
Solar Inverter, UPS, Welder, PFC, Telecom, ESS
www.onsemi.com
VCES
600 V
IC
60 A
C
G
E
E
C
G
COLLECTOR
(FLANGE)
TO2473LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH60N60
SMD
© Semiconductor Components Industries, LLC, 2010
January, 2020 Rev. 3
$Y
&Z
&3
&K
FGH60N60SMD
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FGH60N60SMD/D




 FGH60N60
FGH60N60SMD
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
600
V
±20
V
±30
V
IC
Collector Current
TC = 25°C
120
A
TC = 100°C
60
A
ICM (Note 1) Pulsed Collector Current
180
A
IF
Diode Forward Current
TC = 25°C
60
A
TC = 100°C
30
A
IFM (Note 1) Pulsed Diode Maximum Forward Current
180
A
PD
Maximum Power Dissipation
TC = 25°C
600
W
TC = 100°C
300
W
TJ
Operating Junction Temperature
55 to +175
°C
TSTG
Storage Temperature Range
55 to +175
°C
TL
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC (IGBT)
RqJC (Diode)
RqJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
0.25
1.1
40
Unit
_C/W
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
FGH60N60SMD
Top Mark
FGH60N60SMD
Package
TO247
Packing
Method
Tube
Reel Size
N/A
Tape Width
N/A
Qty per
Tube
30
www.onsemi.com
2




 FGH60N60
FGH60N60SMD
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVCES
Collector to Emitter Breakdown Voltage
DBVCES / DTJ Temperature Coefficient of Breakdown Voltage
ICES
Collector CutOff Current
IGES
GE Leakage Current
ON CHARACTERISTICS
VGE = 0 V, IC = 250 mA
VGE = 0 V, IC = 250 mA
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
600
V
0.6
V/°C
250
mA
±400
nA
VGE(th)
VCE(sat)
GE Threshold Voltage
Collector to Emitter Saturation Voltage
IC = 250 mA, VCE = VGE
IC = 60 A, VGE = 15 V,
3.5
4.5
6.0
V
1.9
2.5
V
IC = 60 A, VGE = 15 V,
TC = 175°C
2.1
V
DYNAMIC CHARACTERISTICS
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
VCE = 30 V, VGE = 0 V,
f = 1 MHz
2915
pF
270
pF
85
pF
Td(on)
Tr
TurnOn Delay Time
Rise Time
VCC = 400 V, IC = 60 A,
RG = 3 W, VGE = 15 V,
Inductive Load, TC = 25°C
18
27
ns
47
70
ns
Td(off)
TurnOff Delay Time
104
146
ns
Tf
Fall Time
50
68
ns
Eon
TurnOn Switching Loss
1.26 1.94
mJ
Eoff
TurnOff Switching Loss
0.45
0.6
mJ
Ets
Total Switching Loss
1.71 2.54
mJ
Td(on)
Tr
TurnOn Delay Time
Rise Time
VCC = 400 V, IC = 60 A,
18
ns
RG = 3 W, VGE = 15 V,
Inductive Load, TC = 175°C
41
ns
Td(off)
TurnOff Delay Time
115
ns
Tf
Fall Time
48
ns
Eon
TurnOn Switching Loss
2.1
mJ
Eoff
TurnOff Switching Loss
0.78
mJ
Ets
Total Switching Loss
2.88
mJ
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
VCE = 400 V, IC = 60 A,
VGE = 15 V
189
284
nC
20
30
nC
Qgc
Gate to Collector Charge
91
137
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3




Recommended third-party FGH60N60 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)