DatasheetsPDF.com

Trench IGBT. FGA25N120ANTDTU-F109 Datasheet

DatasheetsPDF.com

Trench IGBT. FGA25N120ANTDTU-F109 Datasheet
















FGA25N120ANTDTU-F109 IGBT. Datasheet pdf. Equivalent













Part

FGA25N120ANTDTU-F109

Description

NPT Trench IGBT



Feature


FGA25N120ANTDTU — 1200 V, 25 A NPT Tre nch IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coeff icient • Low Saturation Voltage: VCE( sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C Extremely Enhanced Avalanche Capabil ity Applications • Induction H.
Manufacture

ON Semiconductor

Datasheet
Download FGA25N120ANTDTU-F109 Datasheet


ON Semiconductor FGA25N120ANTDTU-F109

FGA25N120ANTDTU-F109; eating, Microwave Oven Description Usin g ON Semiconductor's proprietary trench design and advanced NPT technology, th e 1200V NPT IGBT offers superior conduc tion and switching performances, high a valanche ruggedness and easy parallel o peration. This device is well suited fo r the reso-nant or soft switching appli cation such as induction heating, micro wave oven. C GCE .


ON Semiconductor FGA25N120ANTDTU-F109

TO-3P Absolute Maximum Ratings Symbol Description VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Collector-Emitter Vo ltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collec tor Current @ TC = 25°C @ TC = 100°C Diode Continuous Forward Current Diod e Continuous Forward Current Diode Maxi mum Forward Current @ TC = 25°C @ TC = 100°C Maximum Powe.


ON Semiconductor FGA25N120ANTDTU-F109

r Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25°C @ TC = 100°C Storage Temperatur e Range Maximum Lead Temp. for solderi ng Purposes, 1/8” from case for 5 sec onds Notes: (1) Repetitive rating: Pul se width limited by max. junction tempe rature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parame ter Thermal Resistance, J.





Part

FGA25N120ANTDTU-F109

Description

NPT Trench IGBT



Feature


FGA25N120ANTDTU — 1200 V, 25 A NPT Tre nch IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coeff icient • Low Saturation Voltage: VCE( sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C Extremely Enhanced Avalanche Capabil ity Applications • Induction H.
Manufacture

ON Semiconductor

Datasheet
Download FGA25N120ANTDTU-F109 Datasheet




 FGA25N120ANTDTU-F109
FGA25N120ANTDTU
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25°C
• Low Switching Loss: Eoff, typ = 0.96 mJ
@ IC = 25 A and TC = 25°C
• Extremely Enhanced Avalanche Capability
Applications
• Induction Heating, Microwave Oven
Description
Using ON Semiconductor's proprietary trench design and
advanced NPT technology, the 1200V NPT IGBT offers
superior conduction and switching performances, high
avalanche ruggedness and easy parallel operation. This
device is well suited for the reso-nant or soft switching
application such as induction heating, microwave oven.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2006 Semiconductor Components Industries, LLC.
October-2017,Rev.3
G
E
Ratings
1200
± 20
50
25
90
50
25
150
312
125
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
°C
°C
°C
Typ.
--
--
--
Max.
0.4
2.0
40
Unit
°C/W
°C/W
°C/W
Publication Order Number:
FGA25N120ANTDTU/D




 FGA25N120ANTDTU-F109
Package Marking and Ordering Information
Part Number
Top Mark Package
FGA25N120ANTDTU-F109 FGA25N120ANTDTU TO-3PN
Packing
Method
Tube
Reel Size Tape Width Quantity
N/A
N/A
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
IC = 25 mA, VCE = VGE
IC = 25 A, VGE = 15 V
IC = 25 A, VGE = 15 V,
TC = 125°C
IC = 50 A, VGE = 15 V
VCE = 30 V, VGE = 0 V,
f = 1 MHz
VCC = 600 V, IC = 25 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 25 A,
RG = 10Ω, VGE = 15 V,
Inductive Load, TC = 125°C
VCE = 600 V, IC = 25 A,
VGE = 15 V
--
--
3
mA
--
--
± 250
nA
3.5
5.5
7.5
V
--
2.0
--
V
--
2.15
--
V
--
2.65
--
V
--
3700
--
pF
--
130
--
pF
--
80
--
pF
--
50
--
ns
--
60
--
ns
--
190
--
ns
--
100
--
ns
--
4.1
--
mJ
--
0.96
--
mJ
--
5.06
--
mJ
--
50
--
ns
--
60
--
ns
--
200
--
ns
--
154
--
ns
--
4.3
--
mJ
--
1.5
--
mJ
--
5.8
--
mJ
--
200
--
nC
--
15
--
nC
--
100
--
nC
www.onsemi.com
2




 FGA25N120ANTDTU-F109
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 25 A
TC = 25°C
TC = 125°C
trr
Diode Reverse Recovery Time
TC = 25°C
TC = 125°C
Irr
Diode Peak Reverse Recovery Cur- IF = 25 A
rent
diF/dt = 200 A/μs
TC = 25°C
TC = 125°C
Qrr
Diode Reverse Recovery Charge
TC = 25°C
TC = 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
2.0
2.1
235
300
27
31
3130
4650
Max.
3.0
--
350
--
40
--
4700
--
Unit
V
ns
A
nC
www.onsemi.com
3




Recommended third-party FGA25N120ANTDTU-F109 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)