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RF Switch. F2915NBGK8 Datasheet

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RF Switch. F2915NBGK8 Datasheet
















F2915NBGK8 Switch. Datasheet pdf. Equivalent













Part

F2915NBGK8

Description

High Reliability SP5T RF Switch



Feature


High Reliability SP5T RF Switch 50MHz to 8000MHz F2915 Datasheet DESCRIPTION The F2915 is a high reliability, low in sertion loss, 50 Ω SP5T absorptive RF switch designed for a multitude of RF a pplications including wireless communic ations. This device covers a broad freq uency range from 50 MHz to 8000 MHz. In addition to providing low insertion lo ss, the F2915 also .
Manufacture

Renesas

Datasheet
Download F2915NBGK8 Datasheet


Renesas F2915NBGK8

F2915NBGK8; delivers excellent linearity and isolati on performance while providing a 50 Ω termination to the unused RF input port s. The F2915 also includes a patent pen ding constant impedance (KZ) feature. K Z improves system hot switching ruggedn ess, minimizes LO pulling in VCOs, and reduces phase and amplitude variations in distribution networks. It is also id eal for dynamic swi.


Renesas F2915NBGK8

tching/selection between two or more amp lifiers while avoiding damage to upstre am /downstream sensitive devices such a s PAs and ADCs. The F2915 uses a single positive supply voltage supporting thr ee logic control pins using either 3.3 V or 1.8 V control logic. Connecting a negative voltage to pin 20 disables the internal negative voltage generator an d becomes the nega.


Renesas F2915NBGK8

tive supply. COMPETITIVE ADVANTAGE The F 2915 provides constant impedance in all RF ports during transitions improving a system’s hot-switching ruggedness. The device also supports high power han dling, and high isolation; particularly important for DPD receiver use.  Co nstant impedance K|Z| during switching transition  RFX to RFC Isolation = 5 0 dB*  Insertion Loss =.





Part

F2915NBGK8

Description

High Reliability SP5T RF Switch



Feature


High Reliability SP5T RF Switch 50MHz to 8000MHz F2915 Datasheet DESCRIPTION The F2915 is a high reliability, low in sertion loss, 50 Ω SP5T absorptive RF switch designed for a multitude of RF a pplications including wireless communic ations. This device covers a broad freq uency range from 50 MHz to 8000 MHz. In addition to providing low insertion lo ss, the F2915 also .
Manufacture

Renesas

Datasheet
Download F2915NBGK8 Datasheet




 F2915NBGK8
High Reliability SP5T RF Switch
50MHz to 8000MHz
F2915
Datasheet
DESCRIPTION
The F2915 is a high reliability, low insertion loss, 50 Ω
SP5T absorptive RF switch designed for a multitude of
RF applications including wireless communications.
This device covers a broad frequency range from
50 MHz to 8000 MHz. In addition to providing low
insertion loss, the F2915 also delivers excellent
linearity and isolation performance while providing a
50 Ω termination to the unused RF input ports. The
F2915 also includes a patent pending constant
impedance (KZ) feature. KZ improves system hot
switching ruggedness, minimizes LO pulling in VCOs,
and reduces phase and amplitude variations in
distribution networks. It is also ideal for dynamic
switching/selection between two or more amplifiers
while avoiding damage to upstream /downstream
sensitive devices such as PAs and ADCs.
The F2915 uses a single positive supply voltage
supporting three logic control pins using either 3.3 V or
1.8 V control logic. Connecting a negative voltage to
pin 20 disables the internal negative voltage generator
and becomes the negative supply.
COMPETITIVE ADVANTAGE
The F2915 provides constant impedance in all RF ports
during transitions improving a system’s hot-switching
ruggedness. The device also supports high power
handling, and high isolation; particularly important for
DPD receiver use.
Constant impedance K|Z| during switching transition
RFX to RFC Isolation = 50 dB*
Insertion Loss = 1.1 dB*
IIP3: +60.5 dBm*
Extended temperature: -40 °C to +105 °C
* 4 GHz
APPLICATIONS
Base Station 2G, 3G, 4G
Portable Wireless
Repeaters and E911 systems
Digital Pre-Distortion
Point to Point Infrastructure
Public Safety Infrastructure
Military Systems, JTRS radios
Cable Infrastructure
Test / ATE Equipment
FEATURES
Five symmetric, absorptive RF ports
High Isolation: 50 dB @ 4000 MHz
Low Insertion Loss: 1.1 dB @ 4000 MHz
High Linearity:
o IIP2 of 114 dBm @ 2000 MHz
o IIP3 of 60.5 dBm @ 4000 MHz
High Operating Power Handling:
o 33 dBm CW on selected RF port
o 27 dBm on terminated ports
Single 2.7 V to 5.5 V supply voltage
External Negative Supply Option
3.3 V and 1.8 V compatible control logic
Operating Temperature -40 °C to +105 °C
4 mm x 4 mm 24 pin QFN package
Pin compatible with competitors
FUNCTIONAL BLOCK DIAGRAM
RFC
VSSEXT V3
RF5
RF4
K|Z|
50
50
50
Control
V2
Circuit
V1
50
50
RF1
RF3
RF2
ORDERING INFORMATION
F2915NBGK8
Tape &
Reel
Green
© 2020 Renesas Electronics Corporation
1
June 22, 2020




 F2915NBGK8
F2915 Datasheet
ABSOLUTE MAXIMUM RATINGS
VDD to GND
Parameter
V1, V2, V3 to GND
RF1, RF2, RF3, RF4, RF5, RFC to GND
VSSEXT to GND
Input Power for any one selected RF through port.
(VDD applied @ 2 GHz and TC = +85 °C)
Input Power for any one selected RF terminated
port .(VDD applied @ 2 GHz and TC = +85 °C)
Input Power for RFC when in the all off state.
(VDD applied @ 2 GHz and TC = +85 °C)
Continuous Power Dissipation (TC = 95 °C Max)
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10s)
ESD Voltage– HBM (Per JESD22-A114)
ESD Voltage – CDM (Per JESD22-C101)
Symbol
VDD
VCNTL
VRF
VEXT
PMAXTHRU
PMAXTERM
PMAXCOM
TJmax
TST
TLEAD
VESDHBM
VESDCDM
Min
-0.3
-0.3
-0.3
-4.0
-65
TC = Temperature of the exposed paddle
Max
+6.0
Lower of
( 3.6, VDD + 0.3)
+0.3
+0.3
37
30
33
3
+140
+150
+260
Class 1C (1500V)
Class C3 (1000V)
Units
V
V
V
V
dBm
dBm
dBm
W
°C
°C
°C
Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at
these or any other conditions above those indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL AND MOISTURE CHARACTERISTICS
θJA (Junction – Ambient)
θJC (Junction – Case) [The Case is defined as the exposed paddle]
Moisture Sensitivity Rating (Per J-STD-020)
41 °C/W
6.4 °C/W
MSL1
© 2020 Renesas Electronics Corporation
2
June 22, 2020




 F2915NBGK8
F2915 Datasheet
F2915 RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage (s)
Operating Temp Range
RF Frequency Range
Symbol
Conditions
Min
VDD
Pin 20 grounded
Pin 20 Driven with VSSEXT
2.7
2.7
VSSEXT Negative Supply1
-3.6
TCASE
Exposed Paddle Temperature
-40
FRF
50
Typ Max
5.5
5.5
-3.4
-3.2
+105
8000
Units
V
OC
MHz
RF Continuous
Input CW Power 2
Selected Port
PRF
Terminated Ports3
33
dBm
27
RF Continuous
Input CW Power for
Hot RF Switching2
PRFSW
RFC as
the input
RF1 thru
RF5 as
the inputs
Switch to RF1
thru RF5.
Switched into or
out of all off
state.
Switched to RFC
or into Term3.
Switch into or
out of all off
condition.
27
24
dBm
27
27
RF1 - 5 Port Impedance
ZRFx
RFC Port Impedance
ZRFC
50
50
Ω
Note 1: For normal operation, connect VSSEXT = 0 V (pin 20) to GND to enable the internal negative voltage generator.
By applying VSSEXT to pin 20, the negative voltage generator is disabled completely eliminating any
generator spurious responses.
Note 2: Levels based on TC ≤ 85C. See Figure 1 power de-rating curve for higher case temperatures.
Note 3: In any of the insertion loss modes or switching into any insertion loss mode, any 3 of the 4 remaining
terminated port paths may be each exposed to the maximum stated power level during continuous or hot
switching operation.
Figure 1 - MAXIMUM RF OPERATING INPUT POWER vs. RF FREQUENCY
© 2020 Renesas Electronics Corporation
3
June 22, 2020




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