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NPN Transistor. C6093 Datasheet

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NPN Transistor. C6093 Datasheet
















C6093 Transistor. Datasheet pdf. Equivalent













Part

C6093

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor INCHAN GE Semiconductor 2SC6093 DESCRIPTION Low saturation voltage ·Built-in damp er diode type ·100% avalanche tested Minimum Lot-to-Lot variations for robu st device performance and reliable oper ation APPLICATIONS ·Designed for high voltage color display horizontal deflec tion output applications. ABSOLUTE MAX IMUM RATINGS(Ta=25℃) S.
Manufacture

INCHANGE

Datasheet
Download C6093 Datasheet


INCHANGE C6093

C6093; YMBOL PARAMETER VALUE UNIT VCBO Col lector-Base Voltage 1500 V VCEO Col lector-Emitter Voltage 800 V VEBO E mitter-Base Voltage 5 V IC Collecto r Current- Continuous 5 A IB Base C urrent- Continuous 2 A ICP Collecto r Current-Pulse Collector Power Dissip ation @ Ta=25℃ PC Collector Power Dis sipation @ TC=25℃ TJ Junction Tempe rature 12 A 2 W 25 .


INCHANGE C6093

150 ℃ Tstg Storage Temperature Ran ge -55~150 ℃ isc website:www.iscs emi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transi stor INCHANGE Semiconductor 2SC6093 E LECTRICAL CHARACTERISTICS TC=25℃ unle ss otherwise specified SYMBOL PARAMET ER CONDITIONS MIN TYP. MAX UNIT VCE( sat)-1 Collector-Emitter Saturation Vol tage IC= 1.35A; IB= 0.27A .


INCHANGE C6093

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A VBE(sat) Base-Emitter Saturation Voltage IC= 2. 7A; IB= 0.54A ICBO Collector Cutoff C urrent VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC=0.5A; VCE= 5V hFE -2 DC Current Gain IC= 3A; VCE= 5V 0 .1 0.3 V 2.0 V 1.5 V 10 μA 40 130 mA 10 5.3 7.





Part

C6093

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor INCHAN GE Semiconductor 2SC6093 DESCRIPTION Low saturation voltage ·Built-in damp er diode type ·100% avalanche tested Minimum Lot-to-Lot variations for robu st device performance and reliable oper ation APPLICATIONS ·Designed for high voltage color display horizontal deflec tion output applications. ABSOLUTE MAX IMUM RATINGS(Ta=25℃) S.
Manufacture

INCHANGE

Datasheet
Download C6093 Datasheet




 C6093
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6093
DESCRIPTION
·Low saturation voltage
·Built-in damper diode type
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage color display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
5
A
IB
Base Current- Continuous
2
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
12
A
2
W
25
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 C6093
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6093
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.35A; IB= 0.27A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.7A; IB= 0.54A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC=0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
0.1
0.3
V
2.0
V
1.5
V
10 μA
40
130 mA
10
5.3
7.5
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any
particular purpose, nor does ISC assume any liability arising from the application or use of
any products, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
isc websitewww.iscsemi.com
2
isc & iscsemi is registered trademark








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