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LDMOS Transistors. AFT05MP075NR1 Datasheet

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LDMOS Transistors. AFT05MP075NR1 Datasheet
















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Part

AFT05MP075NR1

Description

RF Power LDMOS Transistors



Feature


Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedn ess N--Channel Enhancement--Mode Latera l MOSFETs Designed for mobile two--way radio applications with frequencies fr om 136 to 520 MHz. The high gain, rugge dness and broadband performance of thes e devices make them ideal for large--si gnal, common source amplifier applicati ons in mobile radi.
Manufacture

NXP

Datasheet
Download AFT05MP075NR1 Datasheet


NXP AFT05MP075NR1

AFT05MP075NR1; o equipment. Typical Performance: 12.5 V, TA = 25C, CW Gps D Pout Fr equency (dB) (%) (W) 136 MHz 21.0 68.0 76 450--520 MHz (1) 14.6 65.8 75 520 MHz (2) 18.5 68.5 70 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin Test (W) Vol tage Result 520 (2) CW > 65:1 at all 2 Phase Angles (3 dB Overdrive) 17 No Device Degradatio.


NXP AFT05MP075NR1

n 1. Measured in 450--520 MHz UHF broad band reference circuit. 2. Measured in 520 MHz narrowband test circuit. Featu res Characterized for Operation from 1 36 to 520 MHz Unmatched Input and Outp ut Allowing Wide Frequency Range Utiliz ation Integrated ESD Protection Integ rated Stability Enhancements Wideband — Full Power Across the Band Excepti onal Thermal Perform.


NXP AFT05MP075NR1

ance Extreme Ruggedness High Linearity for: TETRA, SSB, LTE In Tape and Reel . R1 Suffix = 500 Units, 44 mm Tape Wid th, 13--inch Reel. Typical Applications Output Stage VHF Band Mobile Radio O utput Stage UHF Band Mobile Radio Docu ment Number: AFT05MP075N Rev. 1, 8/2014 AFT05MP075NR1 AFT05MP075GNR1 136–520 MHz, 70 W, 12.5 V BROADBAND RF POWER L DMOS TRANSISTORS TO.





Part

AFT05MP075NR1

Description

RF Power LDMOS Transistors



Feature


Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedn ess N--Channel Enhancement--Mode Latera l MOSFETs Designed for mobile two--way radio applications with frequencies fr om 136 to 520 MHz. The high gain, rugge dness and broadband performance of thes e devices make them ideal for large--si gnal, common source amplifier applicati ons in mobile radi.
Manufacture

NXP

Datasheet
Download AFT05MP075NR1 Datasheet




 AFT05MP075NR1
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
136 to 520 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
Typical Performance: 12.5 V, TA = 25C, CW
Gps
D
Pout
Frequency
(dB)
(%)
(W)
136 MHz
21.0
68.0
76
450--520 MHz (1)
14.6
65.8
75
520 MHz (2)
18.5
68.5
70
Load Mismatch/Ruggedness
Frequency Signal
(MHz)
Type
VSWR
Pin
Test
(W)
Voltage
Result
520 (2)
CW > 65:1 at all
2
Phase Angles (3 dB Overdrive)
17
No Device
Degradation
1. Measured in 450--520 MHz UHF broadband reference circuit.
2. Measured in 520 MHz narrowband test circuit.
Features
Characterized for Operation from 136 to 520 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band
Exceptional Thermal Performance
Extreme Ruggedness
High Linearity for: TETRA, SSB, LTE
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.
Typical Applications
Output Stage VHF Band Mobile Radio
Output Stage UHF Band Mobile Radio
Document Number: AFT05MP075N
Rev. 1, 8/2014
AFT05MP075NR1
AFT05MP075GNR1
136–520 MHz, 70 W, 12.5 V
BROADBAND
RF POWER LDMOS TRANSISTORS
TO--270WB--4
AFT05MP075NR1
TO--270WBG--4
AFT05MP075GNR1
Gate A
Drain A
Gate B
Drain B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2013–2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT05MP075NR1 AFT05MP075GNR1
1




 AFT05MP075NR1
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range (1,2)
Total Device Dissipation @ TC = 25C
Derate above 25C
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
PD
Value
--0.5, +40
--6.0, +12
17, +0
--65 to +150
–40 to +150
–40 to +225
690
3.45
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 70 W CW, 12.5 Vdc, IDQ(A+B) = 400 mA, 520 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Symbol
RJC
Value (2,3)
0.29
Unit
C/W
Class
2, passes 2500 V
A, passes 250 V
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 40 Vdc, VGS = 0 Vdc)
IDSS
3
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 12.5 Vdc, VGS = 0 Vdc)
IDSS
2
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
600
nAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 295 Adc)
VGS(th)
1.7
2.1
2.5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.0 Adc)
Forward Transconductance (4)
(VGS = 10 Vdc, ID = 8 Adc)
VDS(on)
0.14
Vdc
gfs
7.3
S
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
AFT05MP075NR1 AFT05MP075GNR1
2
RF Device Data
Freescale Semiconductor, Inc.




 AFT05MP075NR1
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 12.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
2.3
pF
Output Capacitance
(VDS = 12.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
64
pF
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss
148
pF
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 12.5 Vdc, IDQ(A+B) = 400 mA, Pin = 1 W, f = 520 MHz
Common--Source Amplifier Output Power
Pout
70
W
Drain Efficiency
D
68.5
%
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ(A+B) = 400 mA
Frequency
(MHz)
Signal
Type
VSWR
Pin
(W)
Test Voltage, VDD
Result
520
CW
> 65:1 at all Phase Angles
2
17
No Device Degradation
(3 dB Overdrive)
1. Each side of device measured separately.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
RF Device Data
Freescale Semiconductor, Inc.
AFT05MP075NR1 AFT05MP075GNR1
3




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