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N-Channel MOSFET. 75332P Datasheet

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N-Channel MOSFET. 75332P Datasheet






75332P MOSFET. Datasheet pdf. Equivalent




75332P MOSFET. Datasheet pdf. Equivalent





Part

75332P

Description

N-Channel MOSFET



Feature


Data Sheet HUF75332P3 October 2013 N-C hannel UltraFET Power MOSFET 55 V, 60 A , 19 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possibl e onresistance per silicon area, result ing in outstanding performance. This de vice is capable of withstanding high en ergy in the avalanch.
Manufacture

Fairchild Semiconductor

Datasheet
Download 75332P Datasheet


Fairchild Semiconductor 75332P

75332P; e mode and the diode exhibits very low r everse recovery time and stored charge. It was designed for use in application s where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drive rs, low-voltage bus switches, and power management in portable and batteryoper ated products. Formerly developmental t ype TA75332. Orde.


Fairchild Semiconductor 75332P

ring Information PART NUMBER HUF75332P3 PACKAGE TO-220AB BRAND 75332P Featu res • 60A, 55V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - SPICE and SABER Therm al Impedance Models Available on the WE B at: www.fairchildsemi.com • Peak Cu rrent vs Pulse Width Curve • UIS Rati ng Curve • Related Literature - TB334 , “Guidelines for Soldering Sur.


Fairchild Semiconductor 75332P

face Mount Components to PC Boards” S ymbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE Pro duct reliability information can be fou nd at http://www.fairchildsemi.com/prod ucts/discrete/reliability/index.html Fo r severe environments, see our Automoti ve HUFA series. All Fairchild semicondu ctor products are manufactured, assembl ed and tested under .

Part

75332P

Description

N-Channel MOSFET



Feature


Data Sheet HUF75332P3 October 2013 N-C hannel UltraFET Power MOSFET 55 V, 60 A , 19 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possibl e onresistance per silicon area, result ing in outstanding performance. This de vice is capable of withstanding high en ergy in the avalanch.
Manufacture

Fairchild Semiconductor

Datasheet
Download 75332P Datasheet




 75332P
Data Sheet
HUF75332P3
October 2013
N-Channel UltraFET Power MOSFET
55 V, 60 A, 19 mΩ
These N-Channel power MOSFETs are manufactured
using the innovative UltraFET process. This advanced
process technology achieves the lowest possible on-
resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very
low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA75332.
Ordering Information
PART NUMBER
HUF75332P3
PACKAGE
TO-220AB
BRAND
75332P
Features
• 60A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2005 Fairchild Semiconductor Corporation
HUF75332P3 Rev. C0




 75332P
HUF75332P3
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
55
V
55
V
±20
V
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg
60
Figure 4
Figure 6
145
0.97
-55 to 175
300
260
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TC = 150oC
VGS = ±20V
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 60A, VGS = 10V (Figure 9)
RθJC
RθJA
(Figure 3)
TO-220
MIN TYP MAX UNITS
55
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100
nA
2
-
4
V
-
0.016 0.019
-
-
1.03 oC/W
-
-
62
oC/W
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
tON
td(ON)
tr
td(OFF)
tf
tOFF
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VDD = 30V, ID 60A,
RL = 0.50, VGS = 10V,
RGS = 6.8
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID 60A,
RL = 0.50
Ig(REF) = 1.0mA
(Figure 13)
-
-
130
ns
-
9
-
ns
-
90
-
ns
-
50
-
ns
-
45
-
ns
-
-
125
ns
-
70
85
nC
-
40
50
nC
-
2.5
3.0
nC
-
6
-
nC
-
15
-
nC
©2005 Fairchild Semiconductor Corporation
HUF75332P3 Rev. C0




 75332P
HUF75332P3
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 60A
ISD = 60A, dISD/dt = 100A/µs
ISD = 60A, dISD/dt = 100A/µs
Typical Performance Curves
MIN TYP MAX UNITS
-
1300
-
pF
-
480
-
pF
-
115
-
pF
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
75
ns
-
-
140
nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125 150
175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
80
60
40
20
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
10-5
SINGLE PULSE
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2005 Fairchild Semiconductor Corporation
HUF75332P3 Rev. C0



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