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N-Channel MOSFET. 75321P Datasheet

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N-Channel MOSFET. 75321P Datasheet






75321P MOSFET. Datasheet pdf. Equivalent




75321P MOSFET. Datasheet pdf. Equivalent





Part

75321P

Description

N-Channel MOSFET



Feature


Data Sheet October 2013 HUF75321P3 N- Channel UltraFET Power MOSFET 55 V, 35 A, 34 mΩ These N-Channel power MOSFET s are manufactured using the innovative UltraFET process. This advanced proces s technology achieves the lowest possib le onresistance per silicon area, resul ting in outstanding performance. This d evice is capable of withstanding high e nergy in the avalanc.
Manufacture

Fairchild Semiconductor

Datasheet
Download 75321P Datasheet


Fairchild Semiconductor 75321P

75321P; he mode and the diode exhibits very low reverse recovery time and stored charge . It was designed for use in applicatio ns where power efficiency is important, such as switching regulators, switchin g converters, motor drivers, relay driv ers, low-voltage bus switches, and powe r management in portable and batteryope rated products. Formerly developmental type TA75321. Ord.


Fairchild Semiconductor 75321P

ering Information PART NUMBER HUF75321P 3 PACKAGE TO-220AB BRAND 75321P Feat ures • 35A, 55V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance SP ICE and SABER Models Available on the W EB at: www.fairchildsemi.com • Peak C urrent vs Pulse Width Curve • UIS Rat ing Curve • Related Literature - TB33 4, “Guidelines for Soldering Su.


Fairchild Semiconductor 75321P

rface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220A B DRAIN (FLANGE) SOURCE DRAIN GATE Pr oduct reliability information can be fo und at http://www.fairchildsemi.com/pro ducts/discrete/reliability/index.html F or severe environments, see our Automot ive HUFA series. All Fairchild semicond uctor products are manufactured, assemb led and tested under.

Part

75321P

Description

N-Channel MOSFET



Feature


Data Sheet October 2013 HUF75321P3 N- Channel UltraFET Power MOSFET 55 V, 35 A, 34 mΩ These N-Channel power MOSFET s are manufactured using the innovative UltraFET process. This advanced proces s technology achieves the lowest possib le onresistance per silicon area, resul ting in outstanding performance. This d evice is capable of withstanding high e nergy in the avalanc.
Manufacture

Fairchild Semiconductor

Datasheet
Download 75321P Datasheet




 75321P
Data Sheet
October 2013
HUF75321P3
N-Channel UltraFET Power MOSFET
55 V, 35 A, 34 mΩ
These N-Channel power MOSFETs are manufactured
using the innovative UltraFET process. This advanced
process technology achieves the lowest possible on-
resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very
low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA75321.
Ordering Information
PART NUMBER
HUF75321P3
PACKAGE
TO-220AB
BRAND
75321P
Features
• 35A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- Thermal Impedance SPICE and SABER Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75321P3 Rev. C0




 75321P
HUF75321P3
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg
55
55
±20
35
Figure 4
Figures 6, 14, 15
93
0.625
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TC = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 35A, VGS = 10V (Figure 9)
Thermal Resistance Junction to Case
RθJC
Thermal Resistance Junction to Ambient
RθJA
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
(Figure 3)
TO-220
VDD = 30V, ID 35A,
RL = 0.86, VGS = 10V,
RGS = 25
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID 35A,
RL = 0.86
Ig(REF) = 1.0mA
(Figure 13)
MIN TYP MAX UNITS
55
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100
nA
2
-
4
V
-
0.028 0.034
-
-
1.6
oC/W
-
-
62
oC/W
-
-
100
ns
-
11
-
ns
-
55
-
ns
-
47
-
ns
-
66
-
ns
-
-
170
ns
-
36
44
nC
-
21
26
nC
-
1.3
1.6
nC
-
3
-
nC
-
9
-
nC
©2001 Fairchild Semiconductor Corporation
HUF75321P3 Rev. C0




 75321P
HUF75321P3
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 35A
ISD = 35A, dISD/dt = 100A/µs
ISD = 35A, dISD/dt = 100A/µs
Typical Performance Curves
MIN TYP MAX UNITS
-
680
-
pF
-
270
-
pF
-
60
-
pF
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
59
ns
-
-
82
nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125 150
175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
40
30
20
10
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1 0.2
0.1
0.05
0.02
0.01
0.1
0.0110-5
SINGLE PULSE
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation
HUF75321P3 Rev. C0



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