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N-Channel MOSFET. 75321S Datasheet

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N-Channel MOSFET. 75321S Datasheet






75321S MOSFET. Datasheet pdf. Equivalent




75321S MOSFET. Datasheet pdf. Equivalent





Part

75321S

Description

N-Channel MOSFET



Feature


Data Sheet HUF75321P3, HUF75321S3S Dece mber 2001 35A, 55V, 0.034 Ohm, N-Chann el UltraFET Power MOSFETs These N-Chann el power MOSFETs are manufactured using the innovative UltraFET® process. Thi s advanced process technology achieves the lowest possible on-resistance per s ilicon area, resulting in outstanding p erformance. This device is capable of w ithstanding high en.
Manufacture

Fairchild Semiconductor

Datasheet
Download 75321S Datasheet


Fairchild Semiconductor 75321S

75321S; ergy in the avalanche mode and the diode exhibits very low reverse recovery tim e and stored charge. It was designed fo r use in applications where power effic iency is important, such as switching r egulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in porta ble and battery-operated products. Form erly developmental.


Fairchild Semiconductor 75321S

type TA75321. Ordering Information PA RT NUMBER PACKAGE BRAND HUF75321P3 TO-220AB 75321P HUF75321S3S TO-263AB 75321S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape an d reel, e.g., HUF75321S3ST. Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE Features • 35A, 55V • Simulation Models - Te.


Fairchild Semiconductor 75321S

mperature Compensated PSPICE® and SABER ™ Models - Thermal Impedance SPICE an d SABER Models Available on the WEB at: www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Cu rve • Related Literature - TB334, “ Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-263AB GATE SOURCE DRAIN (F LANGE) Product reliability inf.

Part

75321S

Description

N-Channel MOSFET



Feature


Data Sheet HUF75321P3, HUF75321S3S Dece mber 2001 35A, 55V, 0.034 Ohm, N-Chann el UltraFET Power MOSFETs These N-Chann el power MOSFETs are manufactured using the innovative UltraFET® process. Thi s advanced process technology achieves the lowest possible on-resistance per s ilicon area, resulting in outstanding p erformance. This device is capable of w ithstanding high en.
Manufacture

Fairchild Semiconductor

Datasheet
Download 75321S Datasheet




 75321S
Data Sheet
HUF75321P3, HUF75321S3S
December 2001
35A, 55V, 0.034 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75321.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75321P3
TO-220AB
75321P
HUF75321S3S
TO-263AB
75321S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75321S3ST.
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• 35A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- Thermal Impedance SPICE and SABER Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75321P3, HUF75321S3S Rev. B




 75321S
HUF75321P3, HUF75321S3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg
55
55
±20
35
Figure 4
Figures 6, 14, 15
93
0.625
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TC = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 35A, VGS = 10V (Figure 9)
Thermal Resistance Junction to Case
RθJC
Thermal Resistance Junction to Ambient
RθJA
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
(Figure 3)
TO-220, TO-263
VDD = 30V, ID 35A,
RL = 0.86, VGS = 10V,
RGS = 25
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID 35A,
RL = 0.86
Ig(REF) = 1.0mA
(Figure 13)
MIN TYP MAX UNITS
55
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100
nA
2
-
4
V
-
0.028 0.034
-
-
1.6
oC/W
-
-
62
oC/W
-
-
100
ns
-
11
-
ns
-
55
-
ns
-
47
-
ns
-
66
-
ns
-
-
170
ns
-
36
44
nC
-
21
26
nC
-
1.3
1.6
nC
-
3
-
nC
-
9
-
nC
©2001 Fairchild Semiconductor Corporation
HUF75321P3, HUF75321S3S Rev. B




 75321S
HUF75321P3, HUF75321S3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 35A
ISD = 35A, dISD/dt = 100A/µs
ISD = 35A, dISD/dt = 100A/µs
Typical Performance Curves
MIN TYP MAX UNITS
-
680
-
pF
-
270
-
pF
-
60
-
pF
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
59
ns
-
-
82
nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125 150
175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
40
30
20
10
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1 0.2
0.1
0.05
0.02
0.01
0.1
0.0110-5
SINGLE PULSE
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation
HUF75321P3, HUF75321S3S Rev. B



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