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N-Channel MOSFET. 75329D Datasheet

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N-Channel MOSFET. 75329D Datasheet






75329D MOSFET. Datasheet pdf. Equivalent




75329D MOSFET. Datasheet pdf. Equivalent





Part

75329D

Description

N-Channel MOSFET



Feature


Data Sheet HUF75329D3, HUF75329D3S Dece mber 2001 20A, 55V, 0.026 Ohm, N-Chann el UltraFET Power MOSFETs These N-Chann el power MOSFETs are manufactured using the innovative UltraFET® process. Thi s advanced process technology achieves the lowest possible on-resistance per s ilicon area, resulting in outstanding p erformance. This device is capable of w ithstanding high en.
Manufacture

Fairchild Semiconductor

Datasheet
Download 75329D Datasheet


Fairchild Semiconductor 75329D

75329D; ergy in the avalanche mode and the diode exhibits very low reverse recovery tim e and stored charge. It was designed fo r use in applications where power effic iency is important, such as switching r egulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in porta ble and battery-operated products. Form erly developmental.


Fairchild Semiconductor 75329D

type TA75329. Ordering Information PA RT NUMBER PACKAGE BRAND HUF75329D3 TO-251AA 75329D HUF75329D3S TO-252AA 75329D NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape an d reel, e.g., HUF75329D3ST. Packaging JEDEC TO-251AA Features • 20A, 55V • Simulation Models - Temperature Com pensated PSPICE® and S.


Fairchild Semiconductor 75329D

ABER™ Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com • Peak Curr ent vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mou nt Components to PC Boards” Symbol D G S JEDEC TO-252AA DRAIN (FLANGE) SOU RCE DRAIN GATE GATE SOURCE DRAIN (FLA NGE) Product reliability info.

Part

75329D

Description

N-Channel MOSFET



Feature


Data Sheet HUF75329D3, HUF75329D3S Dece mber 2001 20A, 55V, 0.026 Ohm, N-Chann el UltraFET Power MOSFETs These N-Chann el power MOSFETs are manufactured using the innovative UltraFET® process. Thi s advanced process technology achieves the lowest possible on-resistance per s ilicon area, resulting in outstanding p erformance. This device is capable of w ithstanding high en.
Manufacture

Fairchild Semiconductor

Datasheet
Download 75329D Datasheet




 75329D
Data Sheet
HUF75329D3, HUF75329D3S
December 2001
20A, 55V, 0.026 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75329D3
TO-251AA
75329D
HUF75329D3S
TO-252AA
75329D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF75329D3ST.
Packaging
JEDEC TO-251AA
Features
• 20A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75329D3, HUF75329D3S Rev. B




 75329D
HUF75329D3, HUF75329D3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg
55
55
±20
20
Figure 4
Figure 6
128
0.86
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TC = 150oC
VGS = ±20V
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 20A, VGS = 10V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
RθJC
RθJA
tON
td(ON)
tr
td(OFF)
tf
tOFF
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
(Figure 3)
TO-251, TO-252
VDD = 30V, ID 20A,
RL = 1.5, VGS = 10V,
RGS = 9.1
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID 20A,
RL = 1.5
Ig(REF) = 1.0mA
(Figure 13)
MIN TYP MAX UNITS
55
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100
nA
2
-
4
V
-
0.022 0.026
-
-
1.17 oC/W
-
-
100
oC/W
-
-
60
ns
-
7
-
ns
-
30
-
ns
-
10
-
ns
-
33
-
ns
-
-
65
ns
-
50
65
nC
-
32
40
nC
-
2.0
2.5
nC
-
5
-
nC
-
13
-
nC
©2001 Fairchild Semiconductor Corporation
HUF75329D3, HUF75329D3S Rev. B




 75329D
HUF75329D3, HUF75329D3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 20A
ISD = 20A, dISD/dt = 100A/µs
ISD = 20A, dISD/dt = 100A/µs
Typical Performance Curves
MIN TYP MAX UNITS
-
1060
-
pF
-
405
-
pF
-
95
-
pF
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
68
ns
-
-
120
nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125 150
175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
25
20
15
10
5
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1 0.2
0.1
0.05
0.02
0.01
0.1
0.0110-5
SINGLE PULSE
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation
HUF75329D3, HUF75329D3S Rev. B



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