DatasheetsPDF.com

OPERATIONAL AMPLIFIERS. TLC272B Datasheet

DatasheetsPDF.com

OPERATIONAL AMPLIFIERS. TLC272B Datasheet






TLC272B AMPLIFIERS. Datasheet pdf. Equivalent




TLC272B AMPLIFIERS. Datasheet pdf. Equivalent





Part

TLC272B

Description

DUAL OPERATIONAL AMPLIFIERS



Feature


TLC272, TLC272A, TLC272B, TLC272Y, TLC27 7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS D Trimmed Offset Voltage: TLC277 . . . 500 µV Max at 25°C, VDD = 5 V D Input Offset Voltage Drift . . . Typically 0.1 µV/Month, Including th e First 30 Days D Wide Range of Supply Voltages Over Specified Temperature Ran ge: 0°C to 70°C . . . 3 V to 16 V – 40°C to 85°C . . . 4 V to .
Manufacture

Texas Instruments

Datasheet
Download TLC272B Datasheet


Texas Instruments TLC272B

TLC272B; 16 V – 55°C to 125°C . . . 4 V to 16 V D Single-Supply Operation D Common-M ode Input Voltage Range Extends Below t he Negative Rail (C-Suffix, I-Suffix ty pes) D Low Noise . . . Typically 25 nV/ √Hz at f = 1 kHz D Output Voltage Ran ge Includes Negative Rail D High Input impedance . . . 1012 Ω Typ D ESD-Prot ection Circuitry D Small-Outline Packag e Option Also Available in.


Texas Instruments TLC272B

Tape and Reel D Designed-In Latch-Up Im munity description The TLC272 and TLC27 7 precision dual operational amplifiers combine a wide range of input offset v oltage grades with low offset voltage d rift, high input impedance, low noise, and speeds approaching those of general -purpose BiFET devices. These devices u se Texas Instruments silicongate LinCMO S technology, whi.


Texas Instruments TLC272B

ch provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. The extremely high input impedance, low bi as currents, and high slew rates make t hese costeffective devices ideal for ap plications previously reserved for BiFE T and NFET products. Four offset voltag e grades are available (C-suffix and I- suffix types), ran.

Part

TLC272B

Description

DUAL OPERATIONAL AMPLIFIERS



Feature


TLC272, TLC272A, TLC272B, TLC272Y, TLC27 7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS D Trimmed Offset Voltage: TLC277 . . . 500 µV Max at 25°C, VDD = 5 V D Input Offset Voltage Drift . . . Typically 0.1 µV/Month, Including th e First 30 Days D Wide Range of Supply Voltages Over Specified Temperature Ran ge: 0°C to 70°C . . . 3 V to 16 V – 40°C to 85°C . . . 4 V to .
Manufacture

Texas Instruments

Datasheet
Download TLC272B Datasheet




 TLC272B
TLC272, TLC272A, TLC272B, TLC272Y, TLC277
LinCMOSPRECISION DUAL OPERATIONAL AMPLIFIERS
D Trimmed Offset Voltage:
TLC277 . . . 500 µV Max at 25°C,
VDD = 5 V
D Input Offset Voltage Drift . . . Typically
0.1 µV/Month, Including the First 30 Days
D Wide Range of Supply Voltages Over
Specified Temperature Range:
0°C to 70°C . . . 3 V to 16 V
– 40°C to 85°C . . . 4 V to 16 V
– 55°C to 125°C . . . 4 V to 16 V
D Single-Supply Operation
D Common-Mode Input Voltage Range
Extends Below the Negative Rail (C-Suffix,
I-Suffix types)
D Low Noise . . . Typically 25 nV/Hz at
f = 1 kHz
D Output Voltage Range Includes Negative
Rail
D High Input impedance . . . 1012 Typ
D ESD-Protection Circuitry
D Small-Outline Package Option Also
Available in Tape and Reel
D Designed-In Latch-Up Immunity
description
The TLC272 and TLC277 precision dual
operational amplifiers combine a wide range of
input offset voltage grades with low offset voltage
drift, high input impedance, low noise, and speeds
approaching those of general-purpose BiFET
devices.
These devices use Texas Instruments silicon-
gate LinCMOStechnology, which provides
offset voltage stability far exceeding the stability
available with conventional metal-gate pro-
cesses.
The extremely high input impedance, low bias
currents, and high slew rates make these cost-
effective devices ideal for applications previously
reserved for BiFET and NFET products. Four
offset voltage grades are available (C-suffix and
I-suffix types), ranging from the low-cost TLC272
(10 mV) to the high-precision TLC277 (500 µV).
These advantages, in combination with good
common-mode rejection and supply voltage
rejection, make these devices a good choice for
new state-of-the-art designs as well as for
upgrading existing designs.
LinCMOS is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002
D, JG, P, OR PW PACKAGE
(TOP VIEW)
1OUT 1
1IN – 2
1IN + 3
GND 4
8 VDD
7 2OUT
6 2IN –
5 2IN +
FK PACKAGE
(TOP VIEW)
NC
1IN –
NC
1IN +
NC
3 2 1 20 19
4
18
5
17
6
16
7
15
8
14
9 10 11 12 13
NC
2OUT
NC
2IN –
NC
NC – No internal connection
DISTRIBUTION OF TLC277
INPUT OFFSET VOLTAGE
30
473 Units Tested From 2 Wafer Lots
VDD = 5 V
25 TA = 25°C
P Package
20
15
10
5
0
– 800
– 400
0
400
800
VIO – Input Offset Voltage – µV
Copyright 2002, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
1




 TLC272B
TLC272, TLC272A, TLC272B, TLC272Y, TLC277
LinCMOSPRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091E OCTOBER 1987 REVISED FEBRUARY 2002
description (continued)
AVAILABLE OPTIONS
PACKAGED DEVICES
TA
VIOmax
AT 25°C
SMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
TSSOP
(PW)
500 µV TLC277CD
2 mV TLC272BCD
0°C to 70°c
5 mV TLC272ACD
10mV TLC272CD
TLC277CP
TLC272BCP
TLC272ACP
TLC272CP TLC272CPW
500 µV TLC277ID
2 mV TLC272BID
40°C to 85°C
5 mV TLC272AID
10 mV TLC272ID
TLC277IP
TLC272BIP
TLC272AIP
TLC272IP
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC277CDR).
CHIP
FORM
(Y)
TLC272Y
In general, many features associated with bipolar technology are available on LinCMOSoperational amplifiers
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and
TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote
and inaccessible battery-powered applications. The common-mode input voltage range includes the negative
rail.
A wide range of packaging options is available, including small-outline and chip carrier versions for high-density
system applications.
The device inputs and outputs are designed to withstand 100-mA surge currents without sustaining latch-up.
The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages
up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling
these devices as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from 40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of 55°C to 125°C.
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265




 TLC272B
TLC272, TLC272A, TLC272B, TLC272Y, TLC277
LinCMOSPRECISION DUAL OPERATIONAL AMPLIFIERS
equivalent schematic (each amplifier)
VDD
SLOS091E OCTOBER 1987 REVISED FEBRUARY 2002
P3
P4
R6
R1
IN
P1
IN +
R2
N5
P2
R5
C1
P5 P6
OUT
N1
N2
R3
D1 R4
N3
N4
D2
N6
N7
R7
GND
TLC272Y chip information
This chip, when properly assembled, displays characteristics similar to the TLC272C. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
60
73
(3)
1IN +
(2)
1IN
(7)
2OUT
VDD
(8)
+
+
(4)
GND
(1)
1OUT
(5)
2IN +
(6)
2IN
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
TJmax = 150°C
TOLERANCES ARE ± 10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
3



Recommended third-party TLC272B Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)