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D2012 Datasheet, Equivalent, Power Transistor.

NPN Silicon Power Transistor

NPN Silicon Power Transistor

 

 

 

Part D2012
Description NPN Silicon Power Transistor
Feature ® 2SD2012 NPN SILICON POWER TRANSISTO R s HIGH DC CURRENT GAIN s LOW SATURAT ION VOLTAGE s INSULATED PACKAGE FOR EAS Y MOUNTING APPLICATIONS s GENERAL PURPO SE POWER AMPLIFIERS s GENERAL PURPOSE S WITCHING DESCRIPTION The 2SD2012 is a s ilicon NPN power transistor housed in T O-220F insulated package.
It is inteded for power linear and switching applica tions.
3 2 1 TO-220F INTERNAL SCHEMAT IC DIAGRAM ABSOLUTE MAXIMUM RATINGS S ymbol VCBO VCEO VEBO IC ICM IB Ptot Vis ol Tstg Tj Parameter Collector-Base Vo ltage (IE = 0) Collector-Emitter Voltag e (IB = 0) Emitter-Base Voltage (IC = 0 ) Collector Cur .
Manufacture STMicroelectronics
Datasheet
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Part D2012
Description NPN Silicon Power Transistor
Feature ® 2SD2012 NPN SILICON POWER TRANSISTO R s HIGH DC CURRENT GAIN s LOW SATURAT ION VOLTAGE s INSULATED PACKAGE FOR EAS Y MOUNTING APPLICATIONS s GENERAL PURPO SE POWER AMPLIFIERS s GENERAL PURPOSE S WITCHING DESCRIPTION The 2SD2012 is a s ilicon NPN power transistor housed in T O-220F insulated package.
It is inteded for power linear and switching applica tions.
3 2 1 TO-220F INTERNAL SCHEMAT IC DIAGRAM ABSOLUTE MAXIMUM RATINGS S ymbol VCBO VCEO VEBO IC ICM IB Ptot Vis ol Tstg Tj Parameter Collector-Base Vo ltage (IE = 0) Collector-Emitter Voltag e (IB = 0) Emitter-Base Voltage (IC = 0 ) Collector Cur .
Manufacture STMicroelectronics
Datasheet
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