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2SK3947 Datasheet, Equivalent, N-Channel MOSFET.Silicon N-Channel MOSFET Silicon N-Channel MOSFET |
| Part | 2SK3947 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | 2SK3947
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2 SK3947
Switching Regulator Application s
• Low drain-source ON-resistance: R DS (ON) = 1. 1 Ω (typ. ) • High forwar d transfer admittance: |Yfs| = 5. 0S (ty p. ) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode : Vth = 2. 0~4. 0 V (VDS = 10 V, ID = 1 m A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol R ating Unit Drain-source voltage Drai n-gate voltage (RGS = 20 kΩ) Gate-sour ce voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Si . |
| Manufacture | Toshiba |
| Datasheet |
| Part | 2SK3947 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | 2SK3947
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2 SK3947
Switching Regulator Application s
• Low drain-source ON-resistance: R DS (ON) = 1. 1 Ω (typ. ) • High forwar d transfer admittance: |Yfs| = 5. 0S (ty p. ) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode : Vth = 2. 0~4. 0 V (VDS = 10 V, ID = 1 m A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol R ating Unit Drain-source voltage Drai n-gate voltage (RGS = 20 kΩ) Gate-sour ce voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Si . |
| Manufacture | Toshiba |
| Datasheet |
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