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2SK3947 Datasheet, Equivalent, N-Channel MOSFET.

Silicon N-Channel MOSFET

Silicon N-Channel MOSFET

 

 

 

Part 2SK3947
Description Silicon N-Channel MOSFET
Feature 2SK3947 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2 SK3947 Switching Regulator Application s
• Low drain-source ON-resistance: R DS (ON) = 1.
1 Ω (typ.
)
• High forwar d transfer admittance: |Yfs| = 5.
0S (ty p.
)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 m A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol R ating Unit Drain-source voltage Drai n-gate voltage (RGS = 20 kΩ) Gate-sour ce voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Si .
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Datasheet
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Part 2SK3947
Description Silicon N-Channel MOSFET
Feature 2SK3947 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2 SK3947 Switching Regulator Application s
• Low drain-source ON-resistance: R DS (ON) = 1.
1 Ω (typ.
)
• High forwar d transfer admittance: |Yfs| = 5.
0S (ty p.
)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 m A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol R ating Unit Drain-source voltage Drai n-gate voltage (RGS = 20 kΩ) Gate-sour ce voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Si .
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Datasheet
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2SK3947

2SK3947
2SK3947

2SK3947

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