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2SK3978-I Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part | 2SK3978-I |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3978 -I
FEATURES ·Drain Current : ID= 4A@ TC=25℃ ·Drain Source Voltage
: VDSS= 200V(Min) ·Static Drain-Source On-Res istance
: RDS(on) = 550mΩ(Max) @VGS=10 V ·100% avalanche tested ·Minimum Lot -to-Lot variations for robust device
pe rformance and reliable operation
DESCR IPTION ·motor drive, DC-DC converter, power switch
and solenoid drive. ABSOL UTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sou rce Voltage 200 V VGS Gate-Source V oltage-Continuous ±20 V ID Drain C urrent-Continuous 4. 0 A IDM Drain C urrent-Single Pluse 16 A . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK3978-I |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3978 -I
FEATURES ·Drain Current : ID= 4A@ TC=25℃ ·Drain Source Voltage
: VDSS= 200V(Min) ·Static Drain-Source On-Res istance
: RDS(on) = 550mΩ(Max) @VGS=10 V ·100% avalanche tested ·Minimum Lot -to-Lot variations for robust device
pe rformance and reliable operation
DESCR IPTION ·motor drive, DC-DC converter, power switch
and solenoid drive. ABSOL UTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sou rce Voltage 200 V VGS Gate-Source V oltage-Continuous ±20 V ID Drain C urrent-Continuous 4. 0 A IDM Drain C urrent-Single Pluse 16 A . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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