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2SK351 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
Part | 2SK351 |
---|---|
Description | N-Channel MOSFET Transistor |
Feature | isc N-Channel MOSFET Transistor
2SK351
FEATURES ·Drain Current : ID= 5A@ TC= 25℃ ·Drain Source Voltage
: VDSS= 80 0V(Min) ·Static Drain-Source On-Resist ance
: RDS(on) = 3Ω(Max) @ VGS= 10V · 100% avalanche tested ·Minimum Lot-to- Lot variations for robust device
perfor mance and reliable operation
DESCRIPTI ON ·motor drive, DC-DC converter, powe r switch
and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA METER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Volta ge-Continuous ±20 V ID Drain Curre nt-Continuous 5 A IDM Drain Current -Single Pluse 10 A PD . |
Manufacture | Inchange Semiconductor |
Datasheet |
Part | 2SK351 |
---|---|
Description | N-Channel MOSFET Transistor |
Feature | isc N-Channel MOSFET Transistor
2SK351
FEATURES ·Drain Current : ID= 5A@ TC= 25℃ ·Drain Source Voltage
: VDSS= 80 0V(Min) ·Static Drain-Source On-Resist ance
: RDS(on) = 3Ω(Max) @ VGS= 10V · 100% avalanche tested ·Minimum Lot-to- Lot variations for robust device
perfor mance and reliable operation
DESCRIPTI ON ·motor drive, DC-DC converter, powe r switch
and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA METER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Volta ge-Continuous ±20 V ID Drain Curre nt-Continuous 5 A IDM Drain Current -Single Pluse 10 A PD . |
Manufacture | Inchange Semiconductor |
Datasheet |
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