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2SK3529-01 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part | 2SK3529-01 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3529 -01
FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage
: VDSS = 800V(Min) ·Static Drain-Source On-Re sistance
: RDS(on) = 1. 9Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum L ot-to-Lot variations for robust device performance and reliable operation DES CRIPTION ·motor drive, DC-DC converter , power switch and solenoid drive. ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-S ource Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain C urrent-Single Pluse 28 A . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK3529-01 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3529 -01
FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage
: VDSS = 800V(Min) ·Static Drain-Source On-Re sistance
: RDS(on) = 1. 9Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum L ot-to-Lot variations for robust device performance and reliable operation DES CRIPTION ·motor drive, DC-DC converter , power switch and solenoid drive. ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-S ource Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain C urrent-Single Pluse 28 A . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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