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1EDS5663H Datasheet, Equivalent, gate driver.

GaN gate driver

GaN gate driver

 

 

 

Part 1EDS5663H
Description GaN gate driver
Feature GaN EiceDRIVER™ product family Single- channel functional and reinforced isola ted gate-drive ICs for high-voltage enh ancement-mode GaN HEMTs Features
• D edicated gate driver ICs for high-volta ge GaN power switches (CoolGaN™, GIT technology based products) – low driv ing impedance (on-resistance 0.
85 Ω s ource, 0.
35 Ω sink) – resistor prog rammable gate current (typ.
10 mA) in s teady “on” state – programmable n egative gate voltage to completely avoi d spurious turn-on
• Single output su pply voltage (typ.
8 V, floating)
• S witching behavior independent of duty-c ycle (2 "off" voltage levels)
• Diffe r .
Manufacture Infineon
Datasheet
Download 1EDS5663H Datasheet
Part 1EDS5663H
Description GaN gate driver
Feature GaN EiceDRIVER™ product family Single- channel functional and reinforced isola ted gate-drive ICs for high-voltage enh ancement-mode GaN HEMTs Features
• D edicated gate driver ICs for high-volta ge GaN power switches (CoolGaN™, GIT technology based products) – low driv ing impedance (on-resistance 0.
85 Ω s ource, 0.
35 Ω sink) – resistor prog rammable gate current (typ.
10 mA) in s teady “on” state – programmable n egative gate voltage to completely avoi d spurious turn-on
• Single output su pply voltage (typ.
8 V, floating)
• S witching behavior independent of duty-c ycle (2 "off" voltage levels)
• Diffe r .
Manufacture Infineon
Datasheet
Download 1EDS5663H Datasheet

1EDS5663H

1EDS5663H
1EDS5663H

1EDS5663H

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