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BU118 Datasheet, Equivalent, Power Transistor.

Silicon NPN Power Transistor

Silicon NPN Power Transistor

 

 

 

Part BU118
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor BU118 DESCRIPTION ·Excellent Safe Operating Area VCE:200V ICM:7A ·Minimum Lot-to- Lot variations for robust device perfor mance and reliable operation APPLICATI ONS ·Designed for general-purpose swit ching and amplifier applications ABSOL UTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector -Base Voltage 400 V THERMAL CHARACTER ISTICS VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A IB Base Current-Continuous 4 A PC Collector Power Dissipation@TC=25 60 W TJ, Tstg .
Manufacture Inchange Semiconductor
Datasheet
Download BU118 Datasheet
Part BU118
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor BU118 DESCRIPTION ·Excellent Safe Operating Area VCE:200V ICM:7A ·Minimum Lot-to- Lot variations for robust device perfor mance and reliable operation APPLICATI ONS ·Designed for general-purpose swit ching and amplifier applications ABSOL UTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector -Base Voltage 400 V THERMAL CHARACTER ISTICS VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A IB Base Current-Continuous 4 A PC Collector Power Dissipation@TC=25 60 W TJ, Tstg .
Manufacture Inchange Semiconductor
Datasheet
Download BU118 Datasheet

BU118

BU118
BU118

BU118

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