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IPW65R048CFDA Datasheet, Equivalent, MOSFET Transistor.

N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

 

 

 

Part IPW65R048CFDA
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor IPW65R0 48CFDA FEATURES ·Drain Current : ID= 63.
3A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
048Ω(Max) @ VGS= 10V ·100% avalanche tested ·M inimum Lot-to-Lot variations for robust device performance and reliable operat ion DESCRIPTION ·motor drive, DC-DC c onverter, power switch and solenoid dri ve.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gat e-Source Voltage-Continuous ±20 V I D Drain Current-Continuous 63.
3 A I DM Drain Current-Single P .
Manufacture Inchange Semiconductor
Datasheet
Download IPW65R048CFDA Datasheet
Part IPW65R048CFDA
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor IPW65R0 48CFDA FEATURES ·Drain Current : ID= 63.
3A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
048Ω(Max) @ VGS= 10V ·100% avalanche tested ·M inimum Lot-to-Lot variations for robust device performance and reliable operat ion DESCRIPTION ·motor drive, DC-DC c onverter, power switch and solenoid dri ve.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gat e-Source Voltage-Continuous ±20 V I D Drain Current-Continuous 63.
3 A I DM Drain Current-Single P .
Manufacture Inchange Semiconductor
Datasheet
Download IPW65R048CFDA Datasheet

IPW65R048CFDA

IPW65R048CFDA
IPW65R048CFDA

IPW65R048CFDA

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