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ISCNH060D Datasheet, Equivalent, MOSFET Transistor.

N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

 

 

 

Part ISCNH060D
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor FEATURE S ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min ) ·Static Drain-Source On-Resistance : RDS(on) <6mΩ(Max) @ VGS= 10V ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation DESCRIPTION ·m otor drive, DC-DC converter, power swit ch and solenoid drive.
ABSOLUTE MAXIMU M RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltag e 100 V VGS Gate-Source Voltage-Con tinuous ±20 V ID Drain Current-Con tinuous 100 A PD Total Dissipation @TC=25℃ 90 W TJ Max.
O .
Manufacture Inchange Semiconductor
Datasheet
Download ISCNH060D Datasheet
Part ISCNH060D
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor FEATURE S ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min ) ·Static Drain-Source On-Resistance : RDS(on) <6mΩ(Max) @ VGS= 10V ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation DESCRIPTION ·m otor drive, DC-DC converter, power swit ch and solenoid drive.
ABSOLUTE MAXIMU M RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltag e 100 V VGS Gate-Source Voltage-Con tinuous ±20 V ID Drain Current-Con tinuous 100 A PD Total Dissipation @TC=25℃ 90 W TJ Max.
O .
Manufacture Inchange Semiconductor
Datasheet
Download ISCNH060D Datasheet

ISCNH060D

ISCNH060D
ISCNH060D

ISCNH060D

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