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KSE45H11 Datasheet, Equivalent, Power Transistor.

Silicon PNP Power Transistor

Silicon PNP Power Transistor

 

 

 

Part KSE45H11
Description Silicon PNP Power Transistor
Feature isc Silicon PNP Power Transistor KSE45H 11 DESCRIPTION ·Collector-Emitter Bre akdown Voltage : V(BR)CEO= -80V(Min) · High DC Current Gain : hFE= 60(Min)@ (V CE= -1V, IC= -2A) ·Low Saturation Volt age- : VCE(sat)= -1.
0V(Max)@ (IC= -8A, IB= -0.
4A) ·Complement to Type KSE44H1 1 ·Minimum Lot-to-Lot variations for r obust device performance and reliable o peration APPLICATIONS ·Designed for u se as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta =25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V I C Collector Current-C .
Manufacture INCHANGE
Datasheet
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Part KSE45H11
Description Silicon PNP Power Transistor
Feature isc Silicon PNP Power Transistor KSE45H 11 DESCRIPTION ·Collector-Emitter Bre akdown Voltage : V(BR)CEO= -80V(Min) · High DC Current Gain : hFE= 60(Min)@ (V CE= -1V, IC= -2A) ·Low Saturation Volt age- : VCE(sat)= -1.
0V(Max)@ (IC= -8A, IB= -0.
4A) ·Complement to Type KSE44H1 1 ·Minimum Lot-to-Lot variations for r obust device performance and reliable o peration APPLICATIONS ·Designed for u se as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta =25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V I C Collector Current-C .
Manufacture INCHANGE
Datasheet
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KSE45H11

KSE45H11
KSE45H11

KSE45H11

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