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2SK3651-01R Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part | 2SK3651-01R |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3651 -01R
FEATURES ·Drain Current : ID= 25 A@ TC=25℃ ·Drain Source Voltage
: VD SS= 200V(Min) ·Static Drain-Source On- Resistance
: RDS(on) = 100mΩ(Max) @ VG S= 10V ·100% avalanche tested ·Minimu m Lot-to-Lot variations for robust devi ce
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC conver ter, power switch
and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM BOL PARAMETER VALUE UNIT VDSS Drai n-Source Voltage 200 V VGS Gate-Sou rce Voltage-Continuous ±30 V ID Dr ain Current-Continuous 25 A IDM Dra in Current-Single Pluse 1 . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK3651-01R |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3651 -01R
FEATURES ·Drain Current : ID= 25 A@ TC=25℃ ·Drain Source Voltage
: VD SS= 200V(Min) ·Static Drain-Source On- Resistance
: RDS(on) = 100mΩ(Max) @ VG S= 10V ·100% avalanche tested ·Minimu m Lot-to-Lot variations for robust devi ce
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC conver ter, power switch
and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM BOL PARAMETER VALUE UNIT VDSS Drai n-Source Voltage 200 V VGS Gate-Sou rce Voltage-Continuous ±30 V ID Dr ain Current-Continuous 25 A IDM Dra in Current-Single Pluse 1 . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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