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2SK3659 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part | 2SK3659 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3659
FEATURES ·Drain Current : ID= 25A@ T C=25℃ ·Drain Source Voltage
: VDSS= 200V(Min) ·Static Drain-Source On-Resi stance
: RDS(on) = 5. 7mΩ(Max) @ VGS= 1 0V ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation DESC RIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-So urce Voltage 20 V VGS Gate-Source V oltage-Continuous ±20 V ID Drain C urrent-Continuous 65 A IDM Drain Cu rrent-Single Pluse 260 A . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK3659 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3659
FEATURES ·Drain Current : ID= 25A@ T C=25℃ ·Drain Source Voltage
: VDSS= 200V(Min) ·Static Drain-Source On-Resi stance
: RDS(on) = 5. 7mΩ(Max) @ VGS= 1 0V ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation DESC RIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-So urce Voltage 20 V VGS Gate-Source V oltage-Continuous ±20 V ID Drain C urrent-Continuous 65 A IDM Drain Cu rrent-Single Pluse 260 A . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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