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MJE13007A Datasheet, Equivalent, Power Transistor.

Silicon NPN Power Transistor

Silicon NPN Power Transistor

 

 

 

Part MJE13007A
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor MJE130 07A DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(M in.
) ·Collector Saturation Voltage : V CE(sat) = 2.
0(Max) @ IC= 5.
0A ·Minimum Lot-to-Lot variations for robust devic e performance and reliable operation A PPLICATIONS ·Designed for use in high- voltage, high-speed.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V ALUE UNIT VCEV Collector-Emitter Vol tage 850 V VCEO Collector-Emitter Vo ltage 400 V VEBO Emitter-Base Volta ge 9 V IC Collector Current-Continu ous 8 A ICM Collector Current-peak 16 A IB Base Curre .
Manufacture Inchange Semiconductor
Datasheet
Download MJE13007A Datasheet
Part MJE13007A
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor MJE130 07A DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(M in.
) ·Collector Saturation Voltage : V CE(sat) = 2.
0(Max) @ IC= 5.
0A ·Minimum Lot-to-Lot variations for robust devic e performance and reliable operation A PPLICATIONS ·Designed for use in high- voltage, high-speed.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V ALUE UNIT VCEV Collector-Emitter Vol tage 850 V VCEO Collector-Emitter Vo ltage 400 V VEBO Emitter-Base Volta ge 9 V IC Collector Current-Continu ous 8 A ICM Collector Current-peak 16 A IB Base Curre .
Manufacture Inchange Semiconductor
Datasheet
Download MJE13007A Datasheet

MJE13007A

MJE13007A
MJE13007A

MJE13007A

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