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IRG4BC20U Datasheet, Equivalent, bipolar transistor.Insulated gate bipolar transistor Insulated gate bipolar transistor |
　
　
　
| Part | IRG4BC20U |
|---|---|
| Description | Insulated gate bipolar transistor |
| Feature | PD - 91448D
IRG4BC20U
INSULATED GATE BI POLAR TRANSISTOR
Features
• UltraFast : optimized for high operating frequenc ies 8-40 kHz in hard switching, >200 kH z in resonant mode • Generation 4 IGB T design provides tighter parameter dis tribution and higher efficiency than Ge neration 3 • Industry standard TO-220 AB package C UltraFast Speed IGBT VCE S = 600V G E VCE(on) typ. = 1. 85V @VGE = 15V, IC = 6. 5A n-channel Benefits â €¢ Generation 4 IGBTs offer highest eff iciency available • IGBTs optimized f or specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-s . |
| Manufacture | IRF |
| Datasheet |
| Part | IRG4BC20U |
|---|---|
| Description | Insulated gate bipolar transistor |
| Feature | PD - 91448D
IRG4BC20U
INSULATED GATE BI POLAR TRANSISTOR
Features
• UltraFast : optimized for high operating frequenc ies 8-40 kHz in hard switching, >200 kH z in resonant mode • Generation 4 IGB T design provides tighter parameter dis tribution and higher efficiency than Ge neration 3 • Industry standard TO-220 AB package C UltraFast Speed IGBT VCE S = 600V G E VCE(on) typ. = 1. 85V @VGE = 15V, IC = 6. 5A n-channel Benefits â €¢ Generation 4 IGBTs offer highest eff iciency available • IGBTs optimized f or specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-s . |
| Manufacture | IRF |
| Datasheet |
　
　
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