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IRG4BC20U Datasheet, Equivalent, bipolar transistor.

Insulated gate bipolar transistor

Insulated gate bipolar transistor

 

 

 

Part IRG4BC20U
Description Insulated gate bipolar transistor
Feature PD - 91448D IRG4BC20U INSULATED GATE BI POLAR TRANSISTOR Features
• UltraFast : optimized for high operating frequenc ies 8-40 kHz in hard switching, >200 kH z in resonant mode
• Generation 4 IGB T design provides tighter parameter dis tribution and higher efficiency than Ge neration 3
• Industry standard TO-220 AB package C UltraFast Speed IGBT VCE S = 600V G E VCE(on) typ.
= 1.
85V @VGE = 15V, IC = 6.
5A n-channel Benefits Generation 4 IGBTs offer highest eff iciency available
• IGBTs optimized f or specified application conditions
• Designed to be a "drop-in" replacement for equivalent industry-s .
Manufacture IRF
Datasheet
Download IRG4BC20U Datasheet
Part IRG4BC20U
Description Insulated gate bipolar transistor
Feature PD - 91448D IRG4BC20U INSULATED GATE BI POLAR TRANSISTOR Features
• UltraFast : optimized for high operating frequenc ies 8-40 kHz in hard switching, >200 kH z in resonant mode
• Generation 4 IGB T design provides tighter parameter dis tribution and higher efficiency than Ge neration 3
• Industry standard TO-220 AB package C UltraFast Speed IGBT VCE S = 600V G E VCE(on) typ.
= 1.
85V @VGE = 15V, IC = 6.
5A n-channel Benefits Generation 4 IGBTs offer highest eff iciency available
• IGBTs optimized f or specified application conditions
• Designed to be a "drop-in" replacement for equivalent industry-s .
Manufacture IRF
Datasheet
Download IRG4BC20U Datasheet

IRG4BC20U

IRG4BC20U
IRG4BC20U

IRG4BC20U

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